A5021372447- Particle physics theoretical and experimental studies
- Quantum Chromodynamics and Particle Interactions
- High-Energy Particle Collisions Research
- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Neutrino Physics Research
- Computational Physics and Python Applications
- Advanced Optical Sensing Technologies
- Dark Matter and Cosmic Phenomena
- Black Holes and Theoretical Physics
- Radiation Effects in Electronics
- Particle Accelerators and Free-Electron Lasers
- Nuclear physics research studies
- Atomic and Subatomic Physics Research
- Medical Imaging Techniques and Applications
- Advanced Fluorescence Microscopy Techniques
- Superconducting Materials and Applications
- Stochastic processes and statistical mechanics
- Ocular and Laser Science Research
- Advancements in Semiconductor Devices and Circuit Design
- Analog and Mixed-Signal Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Nuclear Physics and Applications
- Markov Chains and Monte Carlo Methods
University of Liverpool
2016-2025
Istituto Nazionale di Fisica Nucleare, Sezione di Bologna
2023-2024
ETH Zurich
2023-2024
University of Oslo
2023-2024
Jožef Stefan Institute
2023-2024
Institute of High Energy Physics
2023-2024
National Institute for Subatomic Physics
2023-2024
Imperial College London
2023
University of Bologna
2023
Heidelberg University
2021
The Mu3e experiment aims to find or exclude the lepton flavour violating decay $\mu \rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of using an existing beamline Paul Scherrer Institute (PSI) is designed reach a single event sensitivity $2\cdot 10^{-15}$. We present overview all aspects technical design and expected performance phase~I detector. high rate up $10^{8}$ muon decays per second low momenta electrons positrons pose unique set challenges, which we tackle...
The high-voltage CMOS (HVCMOS) sensors are a novel type of active pixel for ionizing particles that can be implemented in processes with deep n-well option. contains one sensor electrode formed implanted p-type substrate. electronics, embedded shallow wells, placed inside the n-well. By biasing substrate high negative voltage and by use lowly doped substrate, depleted region depth at least 30 μm achieved. electrons generated particle collected drift, which induces fast detectable signals....
Abstract A monolithic High Voltage CMOS (HV-CMOS) prototype, UKRI-MPW1, has been developed to further improve the radiation tolerance of this technology, which is a promising candidate for future high-energy physics experiments. UKRI-MPW1 addresses issues high leakage current and parasitic channels identified in its predecessor, UKRI-MPW0, by incorporating an improved chip ring structure custom p-shield layer. Additionally, new pixel flavour with NMOS-only trimming Digital-to-Analogue...
Abstract The RD50-MPW prototypes are High Voltage-CMOS (HV-CMOS) pixel chips in the 150 nm technology from LFoundry S.r.l. aimed at developing monolithic silicon sensors with excellent radiation tolerance, fast timing resolution and high granularity for tracking applications future challenging experiments physics. RD50-MPW4, latest prototype within this programme, implements significant improvements a breakdown voltage (> 400 V), therefore an through multi-ring structure around chip edge...
Abstract Ever more precise time information is required to separate independent events at planned and proposed particle physics experiments. Typically, a combination of internal gain, very fast amplifiers complex sampling circuitry are used achieve this high resolution, which usually come the price additional power consumption, layout area complexity. In contribution novel circuit improve resolution Depleted Monolithic Active Pixel Sensor (DMAPS) presented. Its amplifier feedback designed...
The CERN-RD50 CMOS working group develops the RD50-MPWseries of monolithic high-voltage pixel sensors for potential use in future high luminosity experiments such as HL-LHC and FCC-hh. In this contribution, design latest prototype series, RD50-MPW3, is presented. An overview its matrix digital readout periphery given, with discussion new structures implemented chip problems they aim to solve. main analog features sensor are already tested initial laboratory characterisation
Abstract UKRI-MPW0 was developed to further improve the radiation tolerance of HV-CMOS pixel sensors. It implements a novel sensor cross-section that uses backside-only biasing allow high substrate bias voltages > 600 V. In this contribution, measured results irradiated samples are presented, including their current-to-voltage (I-V) characteristics, depletion depth and performance. The chip is proved have survived fluence 3 × 10 15 n eq /cm 2 .
Abstract The triglyceride and cholesterol content of total, very-low-, intermediate-, low-, high-density lipoproteins, apolipoproteins (apo) Al, All, B, Cll, Clll, E were determined in plasma from 107 patients with clinically well-controlled diabetes 66 age- weight-matched healthy normal subjects. diabetic separated into two groups: those insulin-dependent mellitus (IDDM, type 1, n = 24) non-insulin-dependent (NIDDM, 2, 83). latter group contained subgroups: treated by diet (type 2d, 42) or...
HV-CMOS sensors can offer important advantages in terms of material budget, granularity and cost for large area tracking systems high energy physics experiments. This article presents the design simulated results an pixel demonstrator High Luminosity-LHC. The has been designed 0.35 μm process from ams AG submitted fabrication through engineering run. To improve response sensor, different wafers with moderate to substrate resistivities are used fabricate design. prototype consists four analog...
Abstract Novel considerations are presented on the physics, apparatus and accelerator designs for a future, luminous, energy frontier electron-hadron ( eh ) scattering experiment at LHC in thirties which key physics topics their relation to hadron-hadron HL-LHC programme discussed. Demands derived set by these design of LHeC detector, corresponding update is described. Optimisations design, especially interaction region (IR), presented. Initial indicate that common IR possible be built...
Advances in single photon avalanche detector (SPAD) arrays propose improving the fill factor by confining several SPADs same well, with a main issue related to crosstalk. In applications that measure at fixed times, pixels can be inhibited before arrival of crosstalk charge. This letter reports characterization an array SPADs, where sensors share n-well (fill 67%), and fabricated conventional CMOS technology. The reduction gating time completely eliminates crosstalk, as predicted theory TCAD...
The CERN-RD50 collaboration has ongoing research to further develop monolithic High Voltage-CMOS (HV-CMOS) sensors in a 150 nm process for future particle physics experiments. As part of this programme, test chip (RD50-MPW2) that implements new methodologies low leakage current and fast low-noise readout circuitry been designed submitted fabrication. This article presents the design details simulation results 8 × matrix high-speed HV-CMOS pixels included RD50-MPW2, which two flavours are...
Abstract A series of monolithic High Voltage CMOS (HV-CMOS) pixel sensor prototypes have been developed by the CERN-RD50 working group for potential use in future high luminosity experiments. The aim is to further improve performance HV-CMOS sensors, especially terms granularity, timing resolution and radiation tolerance. evaluation one this series, RD50-MPW3, presented contribution, including laboratory test beam measurements. design latest prototype, RD50-MPW4, which resolves issues found...
Abstract High-Voltage CMOS (HV-CMOS) pixel sensor technology is the most promising route for achieving thin, monolithic detectors with excellent radiation tolerance, as required by future tracking applications in physics experiments, such High Luminosity LHC. This paper introduces a U.K. Research and Innovation funded Multi-Project Wafer prototype chip UKRI-MPW0, which an HV-CMOS designed to push performance parameters of these detectors. Having novel cross-section optimised backside biasing...
Monolithic active pixel sensors (MAPS) based on commercial high-voltage CMOS processes are an exciting technology that is considered as option for the ATLAS Inner Tracker upgrade. Particles detected using deep n-wells a p-type substrate sensor diodes with depleted region extending into silicon bulk. With readout electronics and integrated same device, detector complexity material budget greatly reduced. The ATLASPix1 prototype large-scale MAPS implements full chain single physical chip. It...
We describe a proposal to search for an intrinsic electric dipole moment (EDM) of the proton with sensitivity \targetsens, based on vertical rotation polarization stored beam. The New Physics reach is order $10^~3$TeV mass scale. Observation EDM provides best probe CP-violation in Higgs sector, at level that may be inaccessible electron-EDM experiments. improvement $\theta_{QCD}$, parameter crucial axion and dark matter physics, about three orders magnitude.
This paper presents work done by the CERN-RD50 collaboration to develop and study monolithic CMOS sensors for future hadron colliders, especially in terms of radiation tolerance, time resolution granularity. Currently is completing performance evaluation RD50-MPW2 has recently submitted RD50-MPW3, second third prototype sensor chips designed collaboration. The gives an overview main design aspects results first two RD50-MPW1 RD50-MPW2, details latest RD50-MPW3. a small with 8 x matrix active...
The gated operation is proposed as an effective method to reduce the noise in pixel detectors based on Geiger mode avalanche photodiodes. A prototype with sensor and front-end electronics monolithically integrated has been fabricated a conventional HV-CMOS process. Experimental results demonstrate increase of dynamic range by applying this technique.
High-Voltage CMOS (HV-CMOS) sensors are emerging as a prime candidate for future tracking applications that have extreme requirements on material budget, pixel granularity, time resolution and radiation tolerance. This article presents new HV-CMOS prototype chip, UKRI-MPW0, aimed at pushing some of the boundaries these sensors. chip implements novel sensor cross-section which is optimised backside biasing to unprecedented high voltages. Preliminary measurements shown able withstand bias...