A5100348027- Ga2O3 and related materials
- Geology and Paleoclimatology Research
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Advanced Software Engineering Methodologies
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- Semiconductor materials and devices
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- Physics of Superconductivity and Magnetism
- Service-Oriented Architecture and Web Services
- Pleistocene-Era Hominins and Archaeology
- GaN-based semiconductor devices and materials
- Geological formations and processes
- Force Microscopy Techniques and Applications
- Diamond and Carbon-based Materials Research
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- Semiconductor materials and interfaces
- Drilling and Well Engineering
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- Planetary Science and Exploration
- Superconducting Materials and Applications
- Advanced Radiotherapy Techniques
- Surface and Thin Film Phenomena
- Radiation Therapy and Dosimetry
Lockheed Martin (United States)
2024
University of Central Florida
2013-2024
National High Magnetic Field Laboratory
2024
Florida State University
2024
Ametek (United States)
2022
National Central University
2001-2021
National Taiwan University
2012-2021
Conference Board
2021
University of Michigan–Ann Arbor
2021
Mount Vernon Hospital
2017-2020
We report results of investigation the phonon and thermal properties exfoliated films layered single crystals antiferromagnetic FePS3 MnPS3 semiconductors. Raman spectroscopy was conducted using three different excitation lasers with wavelengths 325 nm (UV), 488 (blue), 633 (red). UV-Raman reveals spectral features which are not detectable via visible light scattering. The conductivity thin measured by two techniques: steady-state optothermal transient time-resolved magneto-optical Kerr...
The influence of 1.5 MeV electron irradiation on minority transport properties Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm−2. Electron Beam-Induced Current technique used determine the hole diffusion length as a function temperature each dose. This revealed activation energies related shallow donors at 40.9 meV and radiation-induced defects with 18.1 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay...
Here we report the effect of field-dependent index value <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$n(B,\theta)$</tex-math></inline-formula> on screening current and consequential NI REBCO coil behavior. Through ‘Little Big Coil (LBC)’ framework, an unexpected voltage behavior has been observed at top bottom coils in fourth mini magnet LBC4 during self-field operation 77 K. The measurement demonstrates...
The surface of single-crystal (-201) oriented β-Ga2O3 was etched in BCl3/Ar inductively coupled plasmas under conditions (an excitation frequency 13.56 MHz, a source power 400 W, and dc self-bias −450 V) that produce removal rates ∼700 Å min−1. Annealing at 450 °C carried out after etching on Ni/Au Schottky diodes formed the either before or annealing step. Current–voltage (I–V) measurements were used to extract barrier height (Φ), diode ideality factor (n), reverse breakdown voltage (VRB)...
Vascular-targeted drug carriers must localize to the wall (i.e., marginate) and adhere a diseased endothelium achieve clinical utility. The particle size has been reported as critical physical property prescribing margination in vitro vivo blood flows. Different transport process steps yield conflicting requirements-microparticles are optimal for margination, but nanoparticles better intracellular or tissue delivery. Here, we evaluate deformable hydrogel microparticles transporting vascular...
Abstract Recent reports on screening current stress simulations of high-field REBCO magnets frequently present peak stresses over 1 GPa. However, this result is probably an unrealistic artifact purely elastic calculations, considering the macroscopic yield and fracture approximately 900 MPa less than 1.1 GPa for Hastelloy substrate-coated conductors. Here, we evaluate elastic-plastic conductor damage at 0.4% strain using a high-stress coil exposed to high field explore regime. The was...
The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence 1014 cm−2, as well subsequent annealing up to 450 °C. Point defects introduced by the damage create trap states that reduce carrier concentration in Ga2O3, with removal rate 235.7 cm−1 for protons this energy. rates under these conditions are comparable GaN-based films heterostructures. Even 300 °C produces recovery approximately half carriers while...
The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a 60Co source for doses up 600 Gy. Temperature-dependent electron beam-induced current (EBIC) employed measure minority carrier transport properties. For low below ∼250 Gy, diffusion length in HEMTs is shown increase about 40%. This...
Abstract This paper reports the magnetic field and winding force-dependent contact resistance, also known as characteristic of no-insulation (NI) REBCO coil. Three NI coils were wound with different forces ( <?CDATA $\lt$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo><</mml:mo> </mml:math> 1 kgf, 3 5 kgf) using same REBCO-coated conductor, they tested at 4.2 K in a background 0, 5, 10, 14 T. The resistance each coil is measured field. As result...
Optical cavities create regions of high field intensity, which can be used for selective spectral enhancement emitters such as the nitrogen vacancy center (NV) in diamond. This report discusses a hybrid metal–diamond photonic crystal cavity, provides greater localization electric than dielectric and mitigates metal-related losses existing plasmonic structures. We fabricated structures using silver single-crystal diamond observed emission NVs near surface. measured mode quality factor (Q) 170...
Cross-linking of polydimethylsiloxane (PDMS) is increasingly important with recent focus on its top surface stiffness. In this paper, we demonstrate that hyperthermal hydrogen projectile bombardment, a sensitive cross-linking technology, superior in enhancing the mechanical properties cured PDMS without significantly degrading hydrophobicity. Both water contact angle measurements and time-of-flight secondary ion mass spectrometry are used to investigate variations chemistry structure upon...
The impact of electron injection, using 10 keV beam a Scanning Electron Microscope, on minority carrier transport in Si-doped β-Ga2O3 was studied for temperatures ranging from room to 120°C. In-situ Beam-Induced Current technique employed determine the diffusion length holes as function temperature and duration injection. experiments revealed pronounced elongation hole with increasing activation energy, associated injection-induced length, determined at ∼ 74 meV matches previous independent...
Frequency selective detection of low energy photons is a scientific challenge using natural materials. A hypothetical surface which functions like light funnel with very thermal mass in order to enhance photon collection and suppress background noise the ideal solution address both temperature frequency limitations present systems. Here, we cavity-coupled quasi-three dimensional plasmonic crystal induces impedance matching free space giving rise extraordinary transmission through...
Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At same time, this information is critical for applications in photovoltaic devices such as, photodetectors. In work, we report variable temperature cathodoluminescence studies silicon-implanted identify a possible mechanism electron luminescence decay observed material.
The minority charge carrier transport in beta gallium oxide (β-Ga2O3) before and after exposure to neutrons from a 241Am-Be source was studied. Cathodoluminescence (CL) spectroscopy current–voltage (I-V) characteristics were used study behavior. High energy radiation affects properties through the production of traps that reduce conductivity mobility material. In this paper, we report effects neutron silicon-doped β-Ga2O3, using rectifiers or transistors as measurement platform. thermal...
The influence of various radiations on the performance and carrier transport properties AlGaN/GaN HEMTs have been observed at length over previous few decades. Gamma irradiation has shown to little density but significant effects device performance. gamma proven non-monotonic in nature, dividing results into low high doses with an inflection point near 300 Gy. Low a tendency improve characteristics, while lead degradation. differences versus are highlighted by electron beam induced current...
We describe a proposal to search for an intrinsic electric dipole moment (EDM) of the proton with sensitivity \targetsens, based on vertical rotation polarization stored beam. The New Physics reach is order $10^~3$TeV mass scale. Observation EDM provides best probe CP-violation in Higgs sector, at level that may be inaccessible electron-EDM experiments. improvement $\theta_{QCD}$, parameter crucial axion and dark matter physics, about three orders magnitude.