A5002365473- Phase-change materials and chalcogenides
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Glass properties and applications
- Nonlinear Optical Materials Studies
- Semiconductor Lasers and Optical Devices
- Ga2O3 and related materials
- Advanced Fiber Optic Sensors
- Chalcogenide Semiconductor Thin Films
- Photonic Crystals and Applications
- Advanced Sensor and Energy Harvesting Materials
- Advanced Fiber Laser Technologies
- Optical Network Technologies
- Semiconductor Quantum Structures and Devices
- Banana Cultivation and Research
- Solid-state spectroscopy and crystallography
- Silicon Carbide Semiconductor Technologies
- Photorefractive and Nonlinear Optics
- Liquid Crystal Research Advancements
- Silk-based biomaterials and applications
- Smart Systems and Machine Learning
- Imbalanced Data Classification Techniques
- Photonic Crystal and Fiber Optics
- Advancements in Semiconductor Devices and Circuit Design
University of Central Florida
2013-2024
Central Glass and Ceramic Research Institute
2020-2024
Deen Dayal Upadhyay Hospital
2022
Sungkyunkwan University
2021
Dr. B. R. Ambedkar National Institute of Technology Jalandhar
2021
Optical phase change materials (O-PCMs), a unique group of featuring drastic optical property contrast upon solid-state transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, neuromorphic computers. Current materials, such as Ge-Sb-Te (GST), exhibit large both refractive index (delta n) loss k), simultaneously. The coupling properties fundamentally limits the function performance many potential applications. In this...
Mechanically stretchable photonics provides a new geometric degree of freedom for photonic system design and foresees applications ranging from artificial skins to soft wearable electronics. Here we describe the experimental realization first single-mode devices. These devices, made chalcogenide glass epoxy polymer materials, are monolithically integrated on elastomer substrates. To impart mechanical stretching capability devices built using these intrinsically brittle our strategy involves...
Mechanically flexible photonic devices are essential building blocks for novel bio-integrated optoelectronic systems, wearable sensors, and consumer electronics.Here we describe the design experimental demonstration of high-performance semiconductor nanomembrane photodetectors integrated with single-mode chalcogenide glass waveguides.Through a combination waveguide-integrated architecture to enhance light-matter interactions mechanical engineering multilayer configurations suppress strains,...
AlGaN/GaN high electron mobility transistors were irradiated with 60Co gamma-rays to doses up 1000 Gy, in order analyze the effects of irradiation on devices' transport properties. Temperature-dependent beam-induced current measurements, conducted devices before and after exposure gamma-irradiation, allowed for obtaining activation energies related radiation-induced defects due nitrogen vacancies. DC current-voltage measurements also assess impact gamma-irradiation transfer, gate, drain...
In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides.We used a single-beam protocol that accounts for magnitude and sign real imaginary parts third-order susceptibility integrated Ge 23 Sb 7 S 70 (GeSbS) waveguides in near-infrared wavelength range at λ 1580 nm.We measured waveguide parameter 7.0 0.7 W -1 • m , which corresponds to refractive index n 2 0.93 0.08 × 10 -18 ∕W, comparable silicon, but with an 80 times lower...
We report a new group of optical phase change materials Ge-Sb-Se-Te (GSST) with low loss from telecom bands to LWIR. further demonstrated GSST-integrated SiN photonics significantly improved switching performance over conventional GST alloys.
The potential for realizing robust, monolithic, near-surface refractive micro-optic elements with long-lived stability is demonstrated in visible and infrared transmitting glasses capable of use dual band applications. Employing an enhanced understanding glass chemistry geometric control mobile ion migration made possible electrode patterning, flat, permanent, thermally-poled structures have been produced characterized. Sub-surface (t~5-10 µm) compositional structural modification during the...
Abstract Infrared (IR) glass–ceramics (GCs) hold the potential to dramatically expand range of optical material solutions available for use in bulk and planar systems IR. Current are limited single‐ or polycrystalline materials traditional IR‐transparent glasses. GCs that can be processed with spatial control extent induced crystallization present opportunity realize an effective refractive index variation, enabling arbitrary gradient elements tailored function. This work discusses role...
Abstract Glass is in general brittle and therefore usually cannot sustain large deformation. Recent advances glass material development as well micro‐mechanical designs, however, are set to defy the conventional wisdom through demonstration of flexible integrated photonics that can be bent, twisted, even stretched without compromising its structural integrity optical performance. In this paper, we review latest progress emerging field, discuss rational mechanical engineering principles...
Abstract The size and weight of conventional imaging systems is defined by costly non‐planar lenses the complex lens assemblies required to minimize optical aberrations. ability engineer gradient refractive index (GRIN) optics has potential overcome constraints traditional homogeneous reducing number components in systems. Here, an innovative strategy realize this goal based on monolithic GRIN media created Ge‐As‐Se‐Pb chalcogenide infrared nanocomposites presented. A heat treatment...
The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a 60Co source for doses up 600 Gy. Temperature-dependent electron beam-induced current (EBIC) employed measure minority carrier transport properties. For low below ∼250 Gy, diffusion length in HEMTs is shown increase about 40%. This...
The cascaded integration of optical waveguides with third-order nonlinearity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\chi ^{(3)}$</tex-math></inline-formula> susceptibilitiy) lithium niobate (LiNbO xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$_{3}$</tex-math></inline-formula> ) is demonstrated on the same chip. Thin-film and chalcogenide (ChG) glass (Ge...
The changes in direct current performance of circular-shaped AlGaN/GaN high electron mobility transistors (HEMTs) after 60Co γ-irradiation doses 50, 300, 450, or 700 Gy were measured. main effects on the HEMTs irradiation increases both drain and mobility. Compton electrons induced from absorption γ-rays appear to generate donor type defects. Drain dispersions ∼5% observed during gate lag measurements due formation a virtual between resulting defects generated γ-irradiation.
To understand the effects of 60Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with beam-induced current measurements, was able to provide critical information defects induced in material as a result gamma-irradiation. It shown that at low gamma-irradiation doses, minority carrier diffusion length exhibits an increase up ∼300 Gy. The observed effect is due longer (hole) life time material's...
Abstract Melt size‐dependent physical property variation is examined in a multicomponent GeSe 2 ‐As Se 3 ‐PbSe chalcogenide glass developed for gradient refractive index applications. The impact of melting conditions on small (40 g) prototype laboratory‐scale melts extended to commercially‐relevant melt sizes (1.325 kg) have been studied and the role thermal history optical evolution parent glass, glass’ crystallization behavior postheat‐treated ceramics, quantified. As‐melted morphology,...
Abstract While silicon photonic integrated circuits for the near‐infrared (IR) telecommunication band have attracted great research interest in past decade, recent advances offer opportunities to extend operational wavelength mid‐IR (2.5‐20 μm) free space communications, sensing, environmental monitoring and much more. In this study, we will comprehensively review current status of materials available waveguides waveguide photodetectors, with a few application oriented examples illustrate...
The structuring of mid-IR materials, such as chalcogenide glass (ChG), at the micro and nano scales, is high interest for fabrication photonic devices in general, spectroscopy applications particular. One efficient method producing regular patterns with a sub-micron to micron length scale through self-organization processes occurring during femtosecond laser exposure. These occur broad set where self-organized can be found not only on surface but also within material volume. This study...
The present work describes the preparation of a new series chalcogenide glasses in an As14Sb26S(60−x) (AgI)x system intending to explore its thermal, structural, optical, mechanical, and electrical properties. differential scanning calorimetry results studied show sharp decrease glass transition temperature (Tg) with successive incremental inclusion AgI composition, implying structural changes network. A thorough Raman analysis corroborates occurrence network due formation AsI3 units Ag–S–As...
Understanding aging in chalcogenide glass thin films using precision resonant cavity