A5080587463- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Advanced Fiber Laser Technologies
- Silicon Nanostructures and Photoluminescence
- Photonic Crystals and Applications
- Mechanical and Optical Resonators
- Advanced Fiber Optic Sensors
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Lasers and Optical Devices
- Analytical Chemistry and Sensors
- Plasmonic and Surface Plasmon Research
- Nonlinear Optical Materials Studies
- Phase-change materials and chalcogenides
- Surface Roughness and Optical Measurements
- Optical Network Technologies
- Electrochemical Analysis and Applications
- Electrowetting and Microfluidic Technologies
- Advanced Photonic Communication Systems
- Molecular Junctions and Nanostructures
- Graphene research and applications
- Spectroscopy and Laser Applications
- Glass properties and applications
Massachusetts Institute of Technology
2016-2024
GlobalFoundries (United States)
2021
Silicon carbide (SiC) is considered a promising platform for linear and nonlinear photonics due to its large band gap, refractive index, low thermo-optic coefficient, Kerr nonlinearity, good mechanical stability. We evaluate amorphous SiC (a-SiC) deposited on an insulator, using plasma-enhanced chemical vapor deposition, as optical material. Deposited films possess gap of 2.3 eV index 2.45 at wavelength 1550 nm. Ring resonators with intrinsic quality factor high 1.6 × 105 are demonstrated....
We demonstrate high efficiency wavelength conversion via four wave mixing in amorphous silicon carbide ring resonators with a loaded quality factor of 70 000. Owing to the and nonlinearity carbide, −21 dB is achieved 15 mW pump power. Moreover, thermo-optic coefficient (TOC) measured be 1.4 × 10−4/°C at telecommunication wavelengths. Taking advantage TOC, we optical bistability resonator. This work presents as promising platform for applications signal processing.
We demonstrate the chemical characterization of aerosol particles with on-chip spectroscopy using a photonic cavity enhanced silicon nitride (Si3N4) racetrack resonator-based sensor. The sensor operates over broad and continuous wavelength range, showing sensitivity at specific resonant wavelengths. Analysis relative change in quality factor resonances successfully yields absorption spectrum deposited on resonators. Detection N-methyl aniline-based near infrared (NIR) range 1500 to 1600 nm...
Integrated photonics is poised to become a mainstream solution for high-speed data communications and sensing in harsh radiation environments, such as outer space, high-energy physics facilities, nuclear power plants, test fusion reactors. Understanding the impact of damage optical materials devices thus prerequisite building radiation-hard photonic systems these applications. In this paper, we report real-time, situ analysis integrated devices. The devices, with an fiber array package...
Despite the recent emergence of microcavity resonators as label-free biological and chemical sensors, practical applications still require simple robust methods to impart selectivity reduce cost fabrication. We introduce use hydrocarbon-in-fluorocarbon-in-water (HC/FC/W) double emulsions a liquid top cladding that expands versatility optical sensors. The all-liquid complex are tunable droplets undergo dynamic reversible morphological transformations in response change environment (e.g.,...
The separation of Ge and Si by an electrically isolating dielectric layer is essential to yield high efficiency for optical telecommunication applications electronic such as MOSFETs. epitaxial lateral overgrowth (ELOG) a promising approach achieve on separated thin layer. However, general understanding the anisotropic dynamics ELOG limited, which prevents its wide adoption. In this paper, we report how orientation width controls ELOG. A competitive from perpendicular directions strip leads...
Mechanical strain engineering has been promising for many integrated photonic applications. However, the of a material electronic bandgap, trade-off exists between uniformity and integration compatibility with photonic-integrated circuits (PICs). Herein, we adopted straightforward recess-type design silicon nitride ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:msub> <mml:mi>SiN</mml:mi> </mml:mrow> <mml:mi>x</mml:mi> </mml:msub>...
Reduced thermal budget is required for back-end-of-line (BEOL) integration of application specific functionality into the multilevel metal stack a processor “substrate.” We report 400 °C BEOL-compatible Ge-on-Si growth (LT Ge) that epitaxial and single crystalline with defect density similar to high temperature small 0.05% tensile strain. Room methanol–iodine passivation employed pre-growth in lieu typical 800 oxide removal step. Undoped LT Ge exhibits p-type conductivity initially n-type...
A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude simultaneously improve uniformity of tensile strain in a germanium (Ge) wave-guide (WG), with help tensile-stressed SiN stressor at WG sidewalls. The SiN-strained germanium-on-insulator (GOI) also experimentally demonstrated. Significant observed Ge material via micro-Raman measurements. This could potentially facilitate photodetector its optical detection range extended further towards longer...
A comprehensive set of SiN building blocks was demonstrated on a monolithic SiPh platform. Low-loss waveguides (<0.35dB/cm), Si-SiN transitions (0.026dB), efficient polarization splitters/rotators, and compact ring WDM filters were realized at O-band.
Heterogeneous integration of diverse materials structures is critical to the scaling electronic and photonic integrated circuits. For a model system Ge-on-Si, we experimentally examine roles lattice misfit thermal expansion in determining residual strain as-grown annealed heteroepitaxial films. We present data for Ge-on-Si growth from 400 730 °C followed by heat treatment 500–900 °C. show that fluctuations 5.02% enable dislocation formation, propose comprehensive conversion compressive...
Numerical study on the effect of an external stressor material, silicon nitride (SiN), tensile strain enhancement Germanium waveguide-on-insulator (Ge WG-OI) was performed. The enhanced shrinks Ge bandgap which leads to extension optical absorption edge towards longer wavelength. It found that 1GPa SiN (400nm) would introduce ~0.65% uniaxial (along WG width direction) in with 0.5μm and extend Γ-valley-light-hole ~1658nm. Tensile strain-enhanced WG-OI also experimentally demonstrated. These...
Silicon carbide has a high refractive index, large band gap, CMOS compatibility, and excellent chemical, mechanical, thermal properties, thus making it an ideal material for on-chip photonic sensors in hostile environments. We discuss the design, fabrication, evaluation of SiC-on-insulator device chemical sensing as well gamma-ray radiation effects on performance sensitivity. The demonstrates quality factor 18,000 at near IR wavelengths maintains even after dose gamma irradiation. effect...
We propose an on-chip photonic particle sensor design that can perform sizing and counting for various environmental applications. The is based on micro ring resonators are able to detect the presence of free space particles through interaction with their evanescent electric field tail. characterize a wide range size ranging from few nano meters micron (~1 micron). platform offers high sensitivity, compactness, fast response device. Further, FDTD simulations performed analyze different...
This presentation will give an overview over germanium photonic devices that are monolithically integrated into a Si CMOS process and then focus on our current work single photon detectors Ge modulators. Due to the quasi direct bandgap behavior of its compatibility with technology, have been developed successfully. photodetectors perform similar III-V preferred when very low dark currents not needed. modulators show promise for high speed ultra-low power consumption. already used in...
A germanium (Ge) MSM photodetector is demonstrated with significantly-enhanced photo-response at the L-band and beyond, using SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> stressor waveguide sidewalls created by a self-aligned dry etching method. This provides CMOS-compatible solution for Ge detectors broadband high-speed integrated photonic applications.
Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and ∼2× enhancement quantum efficiency across L-band.
Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and ∼2× enhancement quantum efficiency across L-band.
A one-for-all strained Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.99</sub> Si xmlns:xlink="http://www.w3.org/1999/xlink">0.01</sub> modulator arrays design is proposed to cover a broad telecommunication band with multiple modulators designed and fabricated simultaneously in simplified lithography patterning flow. This strain engineering innovation applicable III-V materials for light-emitting, photodetecting, sensing applications.
Germanium photodetector, formed with a self-aligned dry etching method, together tensile silicon nitride sidewall stressor, exhibits strain profile improved uniformity and ~2× enhancement on the quantum efficiency at L-band.
We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on dark current Geon-Si p-i-n photodiodes. Sidewall via Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> deposition at 250C removes all peripheral leakage components. These processes yield a mean value J xmlns:xlink="http://www.w3.org/1999/xlink">d</inf> = 160nA/cm <sup...