A5044270943- Photonic and Optical Devices
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Advanced Photonic Communication Systems
- Advanced Fiber Laser Technologies
- Neural Networks and Reservoir Computing
- Advanced Fiber Optic Sensors
- Optical Coatings and Gratings
- Semiconductor Quantum Structures and Devices
- Plasmonic and Surface Plasmon Research
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Mechanical and Optical Resonators
- Advanced Optical Sensing Technologies
- Quantum Information and Cryptography
- Semiconductor materials and devices
- Photorefractive and Nonlinear Optics
GlobalFoundries (United States)
2020-2024
GlobalFoundries (Germany)
2022-2024
Rochester Institute of Technology
2010-2017
Gleason (United States)
2010-2014
University of New Mexico
2012
GLOBALFOUNDRIES’ monolithic 45nm CMOS-Silicon Photonics 300mm high-volume manufacturing platform based on RF technology node, and optimized for high performance low power short-reach optical interconnects on-chip chip-to-chip applications will be discussed.
Enabling cost-effective and power-efficient laser source on a silicon photonics (SiPh) platform is major goal that has been highly sought after. In the past two decades, tremendous effort made to develop various on-chip integration techniques enhance SiPh circuits with efficient light-emitting materials. Here we review our recent advancements in hybrid flip-chip of III-V lasers 300-mm monolithic platform. By leveraging advanced complementary metal oxide semiconductor (CMOS) manufacturing...
In this work, we experimentally demonstrate a novel broadband optical time division multiplexer (OTDM) on silicon chip. The fabricated devices generate 20 Gb/s and 40 signals starting from 5 input signal. proposed design has small footprint of 1mm x 1mm. system is inherently with bandwidth over 100nm making it suitable for high-speed networks
We experimentally demonstrate wavelength-independent couplers based on an asymmetric Mach-Zehnder interferometer a monolithic silicon-photonics platform in state-of-the-art CMOS foundry. The devices are also designed to exhibit fabrication tolerant performance for arbitrary splitting ratios. have developed semi-analytical model optimize the device response and reliability of is benchmarked against 3D-FDTD simulations. Experimental results consistent with simulation obtained by show uniform...
We experimentally demonstrate a tunable delay element that is inherently insensitive to free-carrier loss and achieves up 300ps of delay. It capable arbitrarily storing releasing pulse light through dynamic tuning system microcavities. The inherent storage time more than 32 times the duration stored pulse.
Adiabatic wavelength conversion is experimentally demonstrated at a single photon power-level using an integrated silicon ring resonator. This approach allows of to arbitrary wavelengths with no energy or phase matching constraints. The inherently low-noise and efficient greater than 10% efficiencies for changes up 0.5 nm, more twenty times the resonators line-width. observed change efficiency agrees well theory bright coherent light demonstrations. These results will enable quantum optical...
We review recent progress in loss reduction of Si and SiN waveguides GLOBALFOUNDRIES 300mm monolithic photonics platform. Primary challenges to creating low-loss CMOS integrated photonic components are highlighted potential solutions outlined.
We experimentally demonstrated V-groove-based self-aligned SiN edge coupler (EC) on a monolithic CMOS-SiPh platform. <0.6/0.8 dB TE/TM SMF-EC transmission efficiency, in conjunction with <-39 back reflection and >520 mW power handling capability were achieved.
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation J. K. Mee, M. T. Crowley, N. Patel, D. Murrell, R. Raghunathan, A. Aboketaf, Elshaari, S. F. Preble, P. Ampadu, L. Lester; A passively mode-locked quantum-dot laser operating over a broad temperature range. Appl. Phys. Lett. 13 August 2012; 101 (7): 071112. https://doi.org/10.1063/1.4746266 Download citation...
We simulated and experimentally characterized the differential group delay induced from polarization mode dispersion (PMD) of key components on a monolithic SiPh platform. Strategy for compensating PMD was introduced high-speed applications beyond 100 Gbit/s.
Adiabatic 3-dB couplers based on highly confined silicon waveguides are studied and experimentally demonstrated. The inherently broadband insensitive to fabrication imperfections, which enables reliable photonic circuits.
We report the design and experimental realization of a deep subwavelength-engineered slotted photonic crystal fabricated using commercial monolithic silicon photonics process with minimum feature size near 40 nm. The subwavelength includes corrugated, unit cell shape that leverages electromagnetic interface conditions to localize optical energy in low refractive index regions, achieving four-fold enhancement electric field compared an equivalent without nanoscale corrugations. This...
We demonstrate an electrically pumped InAs quantum dot (QD) two-section passively mode-locked laser (MLL) on a silicon substrate by low temperature (250 °C) Pd-GaAs wafer bonding technology. The saturable absorber of the QD-MLL is isolated 15-μm wide dry-etching gap which resulted in ∼30 kΩ resistance from gain regions MLL. At room temperature, operates O-band (1.3 μm) telecommunication wavelength regime with threshold current 94 mA and bar cavity lengths 6 mm 300 μm, respectively. optimum...
We report the scalable fabrication and characterization of photonic crystal (PhC) nanobeam waveguides incorporating subwavelength-scale dielectric anti-slot unit cells. These PhCs were fabricated using deep UV lithography on a monolithic silicon photonics technology. The band edge mode is characterized by strong field localization in region where minimum feature size approximately 70 nm. This demonstration opens door to further investigation subwavelength engineered structures commercial...
In this work we propose a high-speed hybrid optical-time-division-multiplexing (OTDM) and wavelength-division-multiplexing (WDM) system that seamlessly generates high bit-rate data (>200Gbit/s) from low speed (5Gbit/s) quantum-dot mode locked laser pulse train. The output can be generated using electro-optical micro-ring modulators operate as (5Gbit/s). By utilizing time wavelength domains, the proposed design is promising solution for high-speed, compact low-power consumption optical...
The data communications industry has begun transitioning from electrical to optical interconnects in datacenters order overcome performance bottlenecks and meet consumer needs. To mitigate the costs associated with this change achieve for 5G beyond, it is crucial explore advanced photonic devices that can enable high-bandwidth via wavelength-division multiplexing (WDM) integrated circuits. Subwavelength grating (SWG) filters have shown great promise WDM applications. However, small feature...
A hybrid laser attach technology was demonstrated on GLOBALFOUNDRIES 300-mm monolithic silicon photonics (SiPh) platform. High accuracy bonding of inside a cavity in the SiPh die accomplished. Optical power up to 10dBm through direct butt-coupling die.
Here we propose a robust silicon modulator that seamlessly generates phase shift keyed data. The has very low insertion loss and is against electrical amplitude variations in the modulating signal; specifically 50%-200% variation leads to only π/9 output optical phase, corresponding ± 10% differentially detected signal. This yields ~2.5dB enhancement SNR over OOK (on-off-keying) formats.
We report the hybrid flip-chip integration of III-V laser on a monolithic silicon photonics (SiPh) platform. Wafer-scale attach was demonstrated with assistance cavity Si substrate. The process accomplished through precise optical and mechanical alignment features SiPh wafer. Efficient laser-to-photonic integrated circuit (PIC) butt-coupling power up to 11 dBm achieved combination stops features. Key performance metrics such as mode hopping relative intensity noise (RIN) vs. reflectivity...
A comprehensive set of SiN building blocks was demonstrated on a monolithic SiPh platform. Low-loss waveguides (<0.35dB/cm), Si-SiN transitions (0.026dB), efficient polarization splitters/rotators, and compact ring WDM filters were realized at O-band.
We demonstrate a waveguide-integrated germanium-on-silicon avalanche pho-todiode in monolithic silicon photonics technology, with TE responsivity of 26 A/W at 1310 nm wavelength -5 V operating bias 3-dB bandwidth > 30 GHz.
We design, simulate, and experimentally demonstrate a coarse wavelength-division de-multiplexing system based on cascaded Mach-Zehnder interferometers (MZIs) operating in the O-band. The fabricated devices are built monolithic silicon photonics platform state-of-the-art CMOS foundry. fabrication tolerance of device was obtained by combination analytical 3D Finite-difference time-domain (FDTD) methods. Fabrication-tolerant wavelength-independent couplers were used order to achieve broadband...
This paper details a monolithic approach to the integration of photonic systems. Polarization diverse components are fabricated in 45nm silicon-on-insulator microelectronics process flow which includes digital and RFCMOS, high performance analog mixed signal, mmWave components, electro-thermal electro-optic control elements, fiber laser attach. results single chip optical transceiver solution.