A5025878032- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Photonic Crystals and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Plasmonic and Surface Plasmon Research
- Technology Adoption and User Behaviour
- Advancements in PLL and VCO Technologies
- Energy, Environment, Agriculture Analysis
- Digital Platforms and Economics
Ghent University
2015-2019
IMEC
2015-2018
Ghent University Hospital
2018
iMinds
2015-2016
CEA LETI
2016
University College Ghent
2016
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016
III V Lab
2016
Silicon does not emit light efficiently, therefore the integration of other light‐emitting materials is highly demanded for silicon photonic integrated circuits. A number approaches have been extensively explored in past decade. Here, most recent progress this field reviewed, covering III‐V‐to‐silicon bonding, transfer printing, epitaxial growth and use colloidal quantum dots. The basic to create waveguide‐coupled on‐chip sources different application scenarios are discussed, both nitride...
In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication sensing. We elaborate integration strategy describe a broad range of devices realized this platform covering wavelength from 850 nm to 3.85 μm.
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such modulators are scarce and still lack in performance. Ideally, modulator should have high bandwidth, good modulation efficiency, low loss, cover wide wavelength range. Here, we demonstrate the first electro-optic based on ferroelectric lead zirconate titanate (PZT) films SiN, both O- C-band. Bias-free operation, bandwidths beyond 33 GHz data rates of 40 Gbps...
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APDs) with a gain×bandwidth product above 100GHz.A photonic receiver based on such Ge APD, including 0.13µm SiGe BiCMOS low-noise trans-impedance amplifier and limiting amplifier, is realized.A 5.8dB sensitivity improvement demonstrated at -5.9V bias an gain of 6 through bit error ratio measurements.The absolute in mode -23.4dBm -24.4dBm 1×10 -12 -9 respectively.©2014 Optical Society America
Transceivers based on electroabsorption modulators (EAM) are considered as a promising candidate for the next generation 400 GbE short-reach optical networks. They capable of combining high bandwidth and low-power operation with very compact layout, removing need traveling wave electrodes dedicated 50 Ω termination. In this paper, we demonstrate first silicon-based EAM, in combination an in-house developed SiGe BiCMOS transceiver chipset, transmitting single-lane 100 Gb/s non-return-to-zero...
All-digital radio-over-fiber (RoF) transmission has attracted a significant amount of interest in digital-centric systems or centralized networks because it greatly simplifies the front-end hardware by using digital processing. The sigma-delta modulator (SDM)-based all-digital RoF approach pushes signal processing as far possible into transmit chain. We present real-time 100-GS/s fourth-order single-bit SDM for high-frequency band without aid analog/optical up-conversion. This is fastest...
Four-level pulse amplitude modulation (PAM-4) is widely regarded as the format of choice for next generation 400 gigabit Ethernet short-reach optical transceiver. However, generating and receiving PAM-4 at line rates 112 Gb/s has proven challenging, without relying on power-hungry tools digital signal processing digital-to-analog converters, it requires linearity from E/O-components in link and/or predistortion techniques. Moving binary to multilevel conversion domain would greatly relax...
High speed optical interconnects require low-power compact electro-optical transmit modules comprising driver circuits and modulators.This letter presents a low power 56 Gb/s non-return-to-zero CMOS inverter-based in 28 nm fully depleted silicon-on-insulator driving 46 GHz silicon photonic microring modulator.The delivers 1 Vpp to the modulator from 75 mVpp input while only consuming 40 mW (710 fJ/bit at Gb/s).The realized transmitter shows 4 dB extinction ratio when running of V supply...
We present the design and implementation of a 90 -Gb/s non-return-to-zero (NRZ) direct detection optical receiver that consists low-noise transimpedance amplifier (TIA), fabricated in 55-nm SiGe BiCMOS technology, Ge photodiode integrated into Silicon Photonic circuit. Low-noise broadband operation is achieved using fully differential TIA provides reverse bias. 50-, 56-, 64-Gb/s NRZ demonstrated at bit-error ratios (BERs) below 10-12 sensitivities -12.3-, -11.2-, -11.1-dBm modulation...
We demonstrate the first real-time, serial 100 Gb/s NRZ-OOK transmission with an integrated GeSi EAM implemented on a silicon photonics platform. Transmission over 500m of SSMF and 2 km dispersion shifted fiber is presented.
We demonstrate 60Gb/s NRZ and 100Gb/s PAM4 data modulation with an O-band silicon ring modulator only 1.6V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> 2.5V drive swing respectively, leveraging the large efficiency (55pm/V) electro-optical bandwidth (35GHz) realized by optimized vertical PN diode phase shifter design.
In order to cope with the ever-growing Internet traffic, high-speed optical interconnects are becoming indispensable. Silicon photonics is emerging as a key technology for such interconnects. this paper, we demonstrate 56 Gb/s nonreturn zero on-off keying (NRZ-OOK) direct modulation based on high bandwidth heterogeneously integrated III-V-on-silicon distributed feedback laser, well transmission over 2 km single mode fiber. Using very similar device, but electrically isolated and reversely...
We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with 2 dB extinction ratio. This is the highest bitrate so far reported for membrane coupled to an waveguide. The operates single mode 6 mW output power 100 mA bias current. 3 bandwidth 15 GHz. Transmission experiments using km non zero dispersion shifted fiber were performed 2(7)-1 NRZ-PRBS pattern resulting in 1 penalty.
An integrated laser source to a silicon photonics circuit is an important requirement for optical interconnects. We present direct modulation of heterogeneously distributed feedback on and coupled waveguide. demonstrate 28 Gb/s pseudo-random bit sequence non-return-to-zero data transmission over 2 km non-zero dispersion shifted fiber with 1-dB power penalty. Additionally, we show 40-Gb/s duobinary generated using the bandwidth limitation both back-to-back configurations. Furthermore,...
With next-generation optical interconnects for data centers aiming 0.8 Tb/s or 1.6 Tb/s, 100 Gbaud capable transmitters from a single-laser source will become indispensable. However, these lane rates would require bandwidths of 70 GHz more, doubling the bandwidth requirements electrical and components with respect to fastest current generation running at 53 pulse-amplitude modulation (PAM-4). In this paper, we propose an integrated 4:1 serializer topology achieve 104 On-Off Keying (OOK)...
We present a 106-Gb/s four-level pulse-amplitude modulation (PAM-4) silicon optical receiver consisting of low-noise fully differential transimpedance amplifier (TIA) wirebonded to high-speed photonic Ge photodiode (PD). A operation is achieved through TIA architecture, combined with active on-chip biasing for the PD. To best our knowledge, this first integrated low-power report (sub-)KP4-FEC bit error ratios up 53 GBd PAM-4 without any digital signal processing or equalization compensate...
We present a 70 Gb/s capable optical transmitter consisting of 50 μm long GeSi electro-absorption modulator (integrated in silicon photonics) and fully differential driver designed 55 nm SiGe BiCMOS technology. By properly unbalancing the output stage, can be dc-coupled to thus avoiding use on-chip or external bias-Ts. At wavelength 1560 nm, open eye diagrams for after transmission over 2 km standard single-mode fiber were demonstrated. The total power consumption is 61 mW, corresponding...
We present a five-channel wavelength division multiplexed modulator module that heterogeneously integrates 200GHz channelspacing silicon arrayed-waveguide grating multiplexer and 20Gbps electro -absorption array, showing the potential for 100 Gbps transmission capacity on 1.5x0.5 mm 2 footprint.
In this letter, we present a silicon photonics radioover-fiber transmitter with microwave photonic up-conversion capability. The circuit consists of pair parallel GeSi intensity modulators (EAMs) in an MZI structure. We show that the up-converter/transmitter can up-convert 64-QAM data on 1.5-GHz IF to any output carrier frequency 7-26 GHz range. This interval is only limited by measurement equipment, as demonstrate EAM has 3-dB bandwidth exceeding 65 GHz. Furthermore, linearity characterized...
We demonstrate low-voltage waveguide-coupled germanium avalanche photodetectors (APDs) with a (wafer-scale mean) gain×bandwidth product of 140 GHz at -5 V by utilizing 185-nm-thick Ge layer. An optical receiver based on such an APD operating up to 25 Gb/s is demonstrated.
We report the first 25Gb/s 3-level modulated BM-RX employing a ¼-rate linear BM APD-TIA and custom decoder IC. successfully demonstrated burst-mode sensitivity of −20.4dBm with 18dB dynamic burst-to-burst for upstream links.
We demonstrate the codesign and cointegration of an ultracompact silicon photonic receiver a low-power-consumption (155 mW/channel) two-channel linear transimpedance amplifier array. Operation below forward error coding (FEC) threshold both for quadrature phase-shift keying (QPSK) 16-quadrature amplitude modulation (QAM) at 28 Gbaud is demonstrated.
The upcoming 100 Gb/s links in the next-generation ethernet passive optical networks will be based on four channels of 25 Gb/s. corresponding transceivers these require a high-speed clock and data recovery circuit to extract synchronous recover received data. To achieve sufficiently fast settling time for burst mode upstream applications (PONs), we introduce an architecture first all-digital (AD-CDR). Thanks implementation digital loop filter, our AD-CDR avoids need system or start-of-burst...
Optical transmitters for four-level pulse amplitude modulation (PAM-4) have attracted a significant amount of research in recent years, large part due to the standardization format 200 and 400 Gigabit Ethernet optical interconnects data centers. However, combining low-power linear operation electro-optical frontend with sufficiently bandwidths has proven challenging, especially 100 Gb/s/λ links (i.e., employing 50 Gbaud PAM-4). The most straightforward solution been deal non-idealities...
100-Gb/s single-channel optical data communication transceivers can provide a compact and cost-effective solution for the exponentially growing data-center traffic. One of enabling technologies is electro-absorption-modulated single-mode lasers which are very compact, efficient, fast. In this letter, such transmitter integrated on silicon photonics platform demonstrated. While low loss high contrast waveguides provided by Si photonics, gain efficient electro-absorption InP-based...