A5019278682- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Advanced Fiber Laser Technologies
- Photonic Crystals and Applications
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Thin-Film Transistor Technologies
- Neural Networks and Reservoir Computing
- Silicon and Solar Cell Technologies
- Quantum Information and Cryptography
- Advancements in Semiconductor Devices and Circuit Design
- Mechanical and Optical Resonators
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and interfaces
- Web Application Security Vulnerabilities
- Industrial Vision Systems and Defect Detection
- Network Security and Intrusion Detection
- Quantum Computing Algorithms and Architecture
- Advanced Malware Detection Techniques
- Electron and X-Ray Spectroscopy Techniques
- Laser-Matter Interactions and Applications
- Advancements in Photolithography Techniques
Xanadu Quantum Technologies (Canada)
2025
IMEC
2015-2024
Lightmatter (United States)
2024
KPR Institute of Engineering and Technology
2023
Ghent University
2015-2018
KU Leuven
2016
Massachusetts Institute of Technology
2015
Oerlikon (United States)
2006
University of Connecticut
2002
We present active components developed in imec's silicon photonics platform that enable 50-Gb/s non-return-to-zero operation using CMOS compatible voltages.
Photonics offers a promising platform for quantum computing1–4, owing to the availability of chip integration mass-manufacturable modules, fibre optics networking and room-temperature operation most components. However, experimental demonstrations are needed complete integrated systems comprising all basic functionalities universal fault-tolerant operation5. Here we construct (sub-performant) scale model computer using 35 photonic chips demonstrate its functionality feasibility. This...
We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers 220 nm top thickness. Wide open eye diagrams are demonstrated at 1610 operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation data rates as high 56 Gb/s. Dynamic extinction ratios up to 3.3 dB obtained by applying drive voltages of 2 V peak-to-peak,...
Transceivers based on electroabsorption modulators (EAM) are considered as a promising candidate for the next generation 400 GbE short-reach optical networks. They capable of combining high bandwidth and low-power operation with very compact layout, removing need traveling wave electrodes dedicated 50 Ω termination. In this paper, we demonstrate first silicon-based EAM, in combination an in-house developed SiGe BiCMOS transceiver chipset, transmitting single-lane 100 Gb/s non-return-to-zero...
We report a silicon-contacted Ge/Si avalanche photodiode with RF gain of 11 and bandwidth 27 GHz at -12 V operating 1310 nm. The device is fabricated in an established Si photonics platform without additional process complexity contacts only on Si. Wafer-scale performance data are presented confirming the reproducibility manufacturability device. Wide open eye diagrams demonstrated for 25, 40, 50 Gbps data-rates. demonstration such shows great potential improving optical link margins...
The next generations of data centers require a scalable optical transceiver technology. In this paper we present silicon photonics platform supporting single-channel rates 50Gb/s and above. Advanced process options include 50GHz GeSi electro-absorption modulators, high efficiency thermo-optic phase shifters with Pπ <5mW carrier depletion-based phase-shifters Mach-Zehnder micro-ring modulators. performance reliability the key library components such as detectors, fiber couplers heaters is described.
We report a waveguide-coupled photodetector realized in standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The exploits carrier generation silicon-germanium normally utilized as stressor pFETs. measured responsivity and 3 dB bandwidth are of 0.023 A/W at wavelength 1180 nm 32 GHz −1 V bias (18 0 bias). dark current is less than 10 pA dynamic range larger 60 dB.
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text M. Pantouvaki, P. De Heyn, Rakowski, Verheyen, B. Snyder, S. A. Srinivasan, H. Chen, J. Coster, G. Lepage, Absil, and Van Campenhout, "50Gb/s Silicon Photonics Platform for Short-Reach Optical Interconnects," in Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper Th4H.4. Export BibTex Endnote (RIS) HTML Plain alert Save article
We report C-band waveguide-integrated GeSi electro-absorption modulators with 3dB-bandwidth beyond 50GHz. The DC extinction ratio is 4.2±0.3dB 4.4±0.6dB insertion loss and the dynamic 3.0dB at 50Gb/s NRZ-OOK a 2V swing.
We report on hybrid BiCMOS-Silicon photonics receivers with waveguide coupled Ge/Si avalanche photodiodes, designed in a lateral separate charge absorption multiplication configuration. demonstrate optical modulation amplitude sensitivities of -14.4 dBm for error-free operation at 50 Gb/s and -18.6 under the KP4-FEC limit 56 using NRZ-OOK modulation. An in-depth analysis receiver sensitivity is carried out to understand impact dark current, identify pathways further improvements. The...
We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF.A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.
A 16-channel spatial-division multiplexed transceiver is demonstrated using a multicore fiber coupled to dense array of co-integrated 56Gb/s GeSi electro-absorption modulators and photodetectors, realizing 896Gb/s aggregate bi-directional bandwidth in 1.47mm2 silicon footprint.
With next-generation optical interconnects for data centers aiming 0.8 Tb/s or 1.6 Tb/s, 100 Gbaud capable transmitters from a single-laser source will become indispensable. However, these lane rates would require bandwidths of 70 GHz more, doubling the bandwidth requirements electrical and components with respect to fastest current generation running at 53 pulse-amplitude modulation (PAM-4). In this paper, we propose an integrated 4:1 serializer topology achieve 104 On-Off Keying (OOK)...
We present a 70 Gb/s capable optical transmitter consisting of 50 μm long GeSi electro-absorption modulator (integrated in silicon photonics) and fully differential driver designed 55 nm SiGe BiCMOS technology. By properly unbalancing the output stage, can be dc-coupled to thus avoiding use on-chip or external bias-Ts. At wavelength 1560 nm, open eye diagrams for after transmission over 2 km standard single-mode fiber were demonstrated. The total power consumption is 61 mW, corresponding...
We report on the performance of quantum confined Stark effect (QCSE) in ultra-thin (~350 nm) Ge/SiGe well stacks grown Si. demonstrate an absorption contrast Δα/α 2.1 at 1 Vpp swing QCSE (100 strain relaxed GeSi buffer layers 300 mm Si wafers. Such will enable future integration highly efficient electro-absorption modulators with low optical coupling loss to passive waveguides a sub-micron silicon photonics platform.
We report O-band GeSi quantum-confined Stark effect waveguide-coupled electro- absorption modulator with 50GHz bandwidth. Static extinction ratio of 5.2dB, insertion loss 7.6dB and 60Gb/s NRZ-OOK operation are shown for a 2V swing.
Optical transmitters for four-level pulse amplitude modulation (PAM-4) have attracted a significant amount of research in recent years, large part due to the standardization format 200 and 400 Gigabit Ethernet optical interconnects data centers. However, combining low-power linear operation electro-optical frontend with sufficiently bandwidths has proven challenging, especially 100 Gb/s/λ links (i.e., employing 50 Gbaud PAM-4). The most straightforward solution been deal non-idealities...
Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated with varying Ge thickness and width is probed a CW laser. The these strongly depend on the waveguide due to defect assisted surface recombination. Interface recombination velocities 0.975 × 104 cm/s 1.45 were extracted for Ge/Si Ge/SiO2 interfaces, respectively.
Germanium-on-silicon is a widely used semiconductor stack in silicon photonics. Ge photodetectors require low dark currents to limit power consumption and their reliability assessed by standardized tests. However, conduction degradation mechanisms at different voltages temperatures are not yet fully understood. In this paper, define these mechanisms, we use wafer level tests study vertical p-i-n photodetectors, where found that stressing with constant voltage sensing an I- V sweep the...
This paper presents an experimental demonstration of the photonic segment a photonic-electronic multiply accumulate neuron (PEMAN) architecture, employing silicon chip with high-speed electro-absorption modulators for matrix-vector multiplications. The integrated circuit has been evaluated through noise-sensitive three-layer neural network (NN) 1350 trainable parameters targeting heartbeat sound classification health monitoring purposes. Its validation revealed F1-scores 85.9% and 81% at...
We present a novel integrated PAM-4 modulator based on the vector addition of 2 binary driven parallel GeSi electro-absorption modulators. Clear open eyes at 56 GBaud up to km SSMF without any DSP are demonstrated.
We present a differential EAM driver with on-chip DC-biasing, capable of delivering 2 Vpp to lumped 50μm GeSi EAM, resulting in 4 dB extinction ratio. 70 Gb/s NRZ transmission over km SSMF (1560 nm) record low power consumption 61 mW is demonstrated.
The growing demand for I/O bandwidth in highperformance applications, such as datacenter switches and HPC nodes, drives the need on-package integration of Optical modules with host CMOS ICs [1]. Silicon Photonics (SiPh) is a prime technology platform to realize multi-Tb/s hybrid CMOS-SiPh 1m-500m+ optical interconnect distances [2]. Such require interfaces dense, high-speed electrical low-noise power ground delivery, which can be enabled by through-silicon vias (TSV) into SiPh platform....