A5016848636- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Electric and Hybrid Vehicle Technologies
- Semiconductor Lasers and Optical Devices
- Advanced machining processes and optimization
- Advanced Fiber Optic Sensors
- Conducting polymers and applications
- Electrochemical sensors and biosensors
- Nuclear physics research studies
- Electric Vehicles and Infrastructure
- Orbital Angular Momentum in Optics
- Manufacturing Process and Optimization
- Advanced Measurement and Metrology Techniques
- Electrochemical Analysis and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Battery Technologies Research
- Cell death mechanisms and regulation
- Vehicle Dynamics and Control Systems
- Mechanics and Biomechanics Studies
- melanin and skin pigmentation
- Near-Field Optical Microscopy
- Ocular and Laser Science Research
- Aluminum Alloys Composites Properties
- Laser and Thermal Forming Techniques
University of Chinese Academy of Sciences
2022
Institute of Modern Physics
2022
Chinese Academy of Sciences
2022
China Institute of Atomic Energy
2022
Harbin University of Science and Technology
2019
IMEC
2014-2017
Ghent University
2015-2016
KU Leuven
2014-2015
China Automotive Technology and Research Center
2012-2013
Southwest Jiaotong University
2010-2012
We present active components developed in imec's silicon photonics platform that enable 50-Gb/s non-return-to-zero operation using CMOS compatible voltages.
We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. responsivity 0.74 A/W 1550 nm and 0.93 1310 wavelength. 56 Gbps on-off-keying data reception demonstrated clear open eye diagrams in both the C-band O-band.
We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers 220 nm top thickness. Wide open eye diagrams are demonstrated at 1610 operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation data rates as high 56 Gb/s. Dynamic extinction ratios up to 3.3 dB obtained by applying drive voltages of 2 V peak-to-peak,...
We report a high-performance germanium waveguide photodetectors (WPDs) without doping in or direct metal contacts on germanium, grown and contacted through silicon p-i-n diode structure. Wafer-scale measurements demonstrate high responsivities larger than 1.0 A/W across the C-band low dark current of ~3 nA at -1 V ~8 -2 V. Owing to its small dimensions, Ge WPD exhibits optoelectrical 3-dB bandwidth 20 27 GHz low-bias voltages V, respectively, which are sufficient for operation 28 Gb/s. The...
We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. responsivity the 0.74 0.92 A/W at 1550 nm, respectively.
We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, surface leakage and bulk were separated, their activation energies extracted. The originating from minority carrier generation on Ge layer sidewalls, governed by Shockley-Read-Hall process enhanced trap-assisted-tunneling process, was identified as main contribution to of photodiodes at room temperature. behavior this function temperature reverse bias voltage is well reproduced...
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APDs) with a gain×bandwidth product above 100GHz.A photonic receiver based on such Ge APD, including 0.13µm SiGe BiCMOS low-noise trans-impedance amplifier and limiting amplifier, is realized.A 5.8dB sensitivity improvement demonstrated at -5.9V bias an gain of 6 through bit error ratio measurements.The absolute in mode -23.4dBm -24.4dBm 1×10 -12 -9 respectively.©2014 Optical Society America
The ^{13}C(α,n)^{16}O reaction is the main neutron source for slow-neutron-capture process in asymptotic giant branch stars and intermediate process. Direct measurements at astrophysical energies above-ground laboratories are hindered by extremely small cross sections vast cosmic-ray-induced background. We performed first consistent direct measurement range of E_{c.m.}=0.24 to 1.9 MeV using accelerators China Jinping Underground Laboratory Sichuan University. Our covers almost entire Gamow...
A compact (1.2 mm2) fully integrated mid-IR spectrometer operating in the 3 μm wavelength range is presented. To our knowledge this longest important window for spectroscopy of organic compounds. The based on a silicon-on-insulator arrayed waveguide grating filter. An array InAs0.91Sb0.09 p-i-n photodiodes heterogeneously spectrometers output couplers using adhesive bonding. insertion loss less than dB and waveguide-referred responsivity at room temperature 0.3 A/W.
We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF.A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.
We report on an optical chip-to-chip interconnect solution, thereby demonstrating plasmonics as a solution for ultra-dense, high-speed short-reach communications. The comprises densely integrated plasmonic Mach-Zehnder modulator array that is packaged with standard driving electronics. On the receiver side, germanium photodetector trans-impedance amplifiers. A multicore fiber provides compact interface to array. demonstrate 4 × 20 Gb/s on-off keying signaling direct detection.
We demonstrate low-voltage waveguide-coupled germanium avalanche photodetectors (APDs) with a (wafer-scale mean) gain×bandwidth product of 140 GHz at -5 V by utilizing 185-nm-thick Ge layer. An optical receiver based on such an APD operating up to 25 Gb/s is demonstrated.
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth product of 88GHz. A 7.1dB sensitivity improvement is demonstrated for an APD wire-bonded to a 10Gb/s CMOS transimpedance amplifier, at -6.2V bias.
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text H. Chen, P. Verheyen, De Heyn, G. Lepage, J. Coster, Absil, Roelkens, and Van Campenhout, "−1 V Bias 56 Gbps Germanium Waveguide p-i-n Photodetector Silicon Contacts," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper Tu2D.6. Export BibTex Endnote (RIS) HTML Plain alert Save article
A new type hybrid power train system was developed for HEV, which can works as coupling and transmission mechanism with three input shafts, one output shaft fixed ratios. The HEV adopting this device realize operation modes: driving mode, pure electric propulsion mode electricity generation at vehicle stop condition. It make engine work optimum fuel consumption area, utilize motor to provide high start torque modes conversion transform probable rotation speed. whole structure of is simple...
In order to explore the cutting rule of hard-to-machine material austenitic stainless steel and optimize parameters, multiple sets parameters were schemed out by using uniform design method. Test researches forces, surface roughness efficiency with these conducted under condition dry cutting. On this basis, multi-objective optimization model force applied had been set up regression analysis. Variance analysis showed that formulas have highly significant linear relationship. Verification test...
A novel solder bonding material for high-temperature applications based on Cu@Sn core-shell structured particles was developed, and the fabricated were compressed into preforms die attachment. The reflow temperature this could reached as low 260°C due to melting of outer Sn layer. However, after soldering, resulting interconnections can withstand a high at least 415°C, layer completely transformed Cu-Sn intermetallic compounds (IMCs) with remelting temperatures. formed bondlines exhibit good...
The operating speed of a high-speed cam system can be maximized by the proper choice both kinematic and dynamic parameters lumped model. Considering rocker arm ratio as an unconstrained parameter Coulomb friction parameter, it was found that camshaft at which toss occurred characterized several local extrema, all were sensitive to presence friction. For particular two separate lift curves, design charts have been developed aid in optimal for maximum
In this paper, we propose a method for forming steady patterns of microparticles in dispersion using optical tweezers. We demonstrate how to control the congregation particles and manually fabricate pattern. The pattern may be useful in-depth research, will have applications biology nanotechnology.
Lead-acid batteries are widely used in all walks of life, the State-of-Charge is most important part battery management system. On account strong coupling, multivariable, nonlinear characteristics batteries, this paper adopts LS-SVM method to predict remaining capacity. The POLYnomial (POLY) kernel employed design LS-SVM. Aiming at predigesting hardware requirement application, uses deduced induction input vector simplify POLY kernel, greatly reducing memory capacity practical application....