A5037151094- Photonic and Optical Devices
- Photonic Crystals and Applications
- Semiconductor Lasers and Optical Devices
- Optical Network Technologies
- Advanced Fiber Laser Technologies
- Advanced Photonic Communication Systems
- Advanced Fiber Optic Sensors
- Optical Coatings and Gratings
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- Neural Networks and Reservoir Computing
- Plasmonic and Surface Plasmon Research
- Thin-Film Transistor Technologies
- Spectroscopy Techniques in Biomedical and Chemical Research
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Mechanical and Optical Resonators
- Spectroscopy and Laser Applications
- Silicon and Solar Cell Technologies
- thermodynamics and calorimetric analyses
- Advanced MEMS and NEMS Technologies
- Nonlinear Optical Materials Studies
- Microfluidic and Capillary Electrophoresis Applications
University of Southampton
2015-2024
Universidad de Málaga
2019
CEA LETI
2015
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2015
European Telecommunications Standards Institute
2015
Carleton University
2015
University of Žilina
2015
National Academies of Sciences, Engineering, and Medicine
2015
VSB - Technical University of Ostrava
2015
Université Paris-Sud
2015
Silicon photonics research can be dated back to the 1980s. However, previous decade has witnessed an explosive growth in field. is a disruptive technology that poised revolutionize number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon ability use CMOS-like fabrication resulting high-volume production at low cost. This enabling factor bringing range areas where costs implementation using traditional photonic...
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken literature, a Kramers-Kronig analysis of these used to predict modulation. More recent experimental results terahertz absorption are also improve commonly 1.3- 1.55-μm equations. examine dependence electroabsorption, finding that predictions suggest longer wave...
Silicon-on-insulator (SOI) has been used as a platform for nearinfrared photonic devices more than twenty years.Longer wavelengths, however, may be problematic SOI due to higher absorption loss in silicon dioxide.In this paper we report propagation measurements the longest wavelength so far on platform.We show that losses of 0.6-0.7 dB/cm can achieved at 3.39 µm.We also porous (SiPSi) waveguides same wavelength.
Abstract The majority of the most successful optical modulators in silicon demonstrated recent years operate via plasma dispersion effect and are more specifically based upon free carrier depletion a rib waveguide. In this work we overview different types type silicon. A summary some example devices for each configuration is then presented together with performance that they have achieved. Finally an insight into current research trends involving provided including integration, operation...
The current trend in silicon photonics towards higher levels of integration as well the model using CMOS foundries for fabrication are leading to a need standardization substrate parameters and processes. In particular, several established research development that grant general access, silicon-on-insulator wafers with thickness 220 nm have become standard which devices circuits be designed. this study we investigate role device layer design optimization various components integrated typical...
The 2 μm wavelength band has become a promising candidate to be the next communication window.We demonstrate high-speed modulators based on 220 nm silicon-on-insulator platform working at of 1950 nm, using free carrier plasma dispersion effect in silicon.A Mach-Zehnder interferometer modulator and microring have been characterized.At carrier-depletion operates data rate 20 Gbit/s with an extinction ratio 5.8 dB insertion loss 13 dB.The modulation efficiency (V π • L ) is 2.68 V•cm 4 V...
We present several fundamental photonic building blocks based on suspended silicon waveguides supported by a lateral cladding comprising subwavelength grating metamaterial.We discuss the design, fabrication, and characterization of waveguide bends, multimode interference devices Mach-Zehnder interferometers for 3715 -3800 nm wavelength range, demonstrated first time in this platform.The propagation loss 0.82 dB/cm is reported, some lowest yet achieved range.These results establish direct...
We present a new type of mid-infrared silicon-on-insulator (SOI) waveguide. The waveguide comprises sub-wavelength lattice holes acting as lateral cladding while at the same time allowing for bottom oxide (BOX) removal by etching. loss is determined wavelength 3.8 μm structures before and after being underetched using both vapor phase liquid hydrofluoric acid (HF). A propagation 3.4 dB/cm was measured design with 300 nm grating period 150 partial (560 nm) BOX HF also demonstrate an...
Due to its excellent electronic and photonic properties, silicon is a good candidate for mid-infrared optoelectronic devices systems that can be used in host of applications.In this paper we review some the results reported recently, also present several new on midinfrared including Mach-Zehnder interferometers, multimode interference splitters multiplexers based silicon-oninsulator, polysilicon, suspended silicon, slot waveguide platforms.
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well integration of III-V semiconductors, IV-VI colloidal nanoparticles GeSn alloys on these increasing functionality. The strong nonlinearity silicon combined with low nonlinear absorption in mid-infrared is exploited to generate picosecond pulse based...
The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8μm is reported.The devices are fabricated on 200mm SOI wafers in a CMOS pilot line.Both arrayed waveguide grating structures planar concave were designed tested.Low insertion loss (1.5-2.5dB) good crosstalk characteristics (15-20dB) demonstrated, together with propagation losses the range 3 to 6dB/cm.
Germanium is becoming an important material for mid-infrared photonics, but the modulation mechanisms in Ge are not yet well understood. In this paper, we estimate size of free-carrier electroabsorption and electrorefraction effects germanium across 2 to 16-μm wavelength range at 300 K. The predictions based as much possible upon experimental absorption data from literature supported by extrapolations using first-principle quantum theoretical modeling. We find that substantially stronger than Si.
Silicon photonics has been a very buoyant research field in the last several years mainly because of its potential for telecom and datacom applications. However, prospects using silicon sensing mid-IR have also attracted interest lately. In this paper, we present our recent results on waveguide-based devices near- mid-infrared The silicon-on-insulator platform can be used wavelengths up to 4 μm; therefore, different solutions are needed longer wavelengths. We show passive Si such as...
Germanium-on-silicon is a highly promising platform for planar photonics the midinfrared, due to germanium's wide transparency range. In this letter, we report Ge-on-Si waveguides with record low losses of only 0.6 dB/cm, which achieved using 2.9-μm thick germanium layer, thus minimizing mode interaction dislocations at germanium/silicon interface. Using these waveguides, multimode interferometers insertion 0.21 ± 0.02 dB are also demonstrated.
Mid-infrared absorption spectroscopy is highly relevant for a wide range of sensing applications. In this letter, we demonstrate Fourier-transform spectrometer chip based on the principle spatial heterodyning implemented in silicon-on-insulator waveguide platform, and operating near 3.75-μm wavelength. The comprises splitting tree feeding to an array 42 Mach-Zehnder interferometers with linearly increasing optical path length differences. A spectral retrieval algorithm calibration matrices...
We report transmission measurements of germanium on silicon waveguides in the 7.5-8.5 µm wavelength range, with a minimum propagation loss 2.5 dB/cm at 7.575 µm.However, we find an unexpected strongly increasing higher wavelengths, potential causes which discuss detail.We also demonstrate first multimode interferometers operating this as well grating couplers optimized for measurement using long infrared camera.Finally, use implementation "cut-back" method that allows simultaneous through...
In this Letter, we report suspended silicon waveguides operating at a wavelength of 7.67 μm with propagation loss 3.1 0.3 dB∕cm.To our knowledge, is the first demonstration low-loss such long wavelength, comparable to other platforms that use more exotic materials.The Si waveguide core supported by sub-wavelength grating provides lateral optical confinement while also allowing access buried oxide layer so it can be wet etched using hydrofluoric acid.We demonstrate bends and s-bends.
Germanium based photonic devices can play a significant role in several applications, particularly the so-called fingerprint wavelength region. Here, we review our recent results on mid-infrared germanium that show promising performance 2-7.5 μm range.
We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 μ m. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides 400-nm Si device layer thickness used. Devices conventional straight arm and spiral geometries investigated. Straight-arm MZIs exhibited higher modulation depths, up to 30.5 dB, whereas spiral-arm required smaller...
All-optical modulation has been demonstrated in a germanium-on-silicon rib waveguide over the mid-infrared wavelength range of 2–3 μm using free-carrier absorption scheme. Transmission measurements have shown waveguides to low propagation losses that are relatively independent out 3.8 μm, indicating could be extended further into region for applications sensing and spectroscopy. By monitoring material recovery, lifetime micron-sized estimated ∼18 ns, allowing speeds within megahertz regime.
We report on the design, fabrication, and characterization of silicon-on-insulator rib strip waveguides at wavelengths longer than 3.7 μm. Propagation losses 1.5 ± 0.2 dB/cm 3.73 μm 1.8 3.8 have been measured for waveguides, whilst submicron exhibited propagation 4.6 1.1 wavelength 3.74 A 1×2 multimode interference (MMI) splitter racetrack resonators based are also examined. Optical 3.6 dB/MMI a resonator Q-value 8.2 k obtained
In this paper we present our recent work on mid-infrared photonic integrated circuits for spectroscopic sensing applications.We discuss the use of silicon-based purpose and detail how a variety optical functions in besides passive waveguiding filtering can be realized, either relying nonlinear optics or integration other materials such as GaSb-based compound semiconductors, GeSn epitaxy PbS colloidal nanoparticles.©2013 Optical Society America
Germanium is a material of high interest for midinfrared (MIR) integrated photonics due to its CMOS compatibility and wide transparency window covering the 2-15 µm spectral region exceeding 4 8 limit Silicon-on-Insulator (SOI) platform Si respectively.In this Letter, we report suspended germanium waveguides operating at wavelength 7.67 with propagation loss 2.6 ± 0.3 dB/cm.To our knowledge, first demonstration low-loss such long wavelength.Suspension waveguide achieved by defining holes...
Silicon photonics is poised to revolutionize several data communication applications. The development of high performance optical modulators formed in silicon essential for the technology be viable. In this paper, we review our recent work on carrier-depletion Mach-Zehnder-based which have part within U.K. Photonics and HELIOS projects, as well including some new data. A concept self-aligned formation p-n junction flexible capability produce a number device configurations presented. This...
We demonstrate the design, fabrication and characterization of mid-infrared photonic crystal waveguides on a silicon-on-insulator platform, showing guided modes in wavelength regime between 2.9 3.9 µm.The is performed with proprietary intra-cavity Optical Parametric Oscillator free space optical setup fibre coupled using commercial Quantum Cascade Laser.We discuss use an integrated Mach-Zehnder interferometer for dispersion measurements report measured group velocity up to value n g = 12,...