A5016261899- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Optic Sensors
- Advanced Antenna and Metasurface Technologies
- Neural Networks and Reservoir Computing
- Antenna Design and Optimization
- Microwave Engineering and Waveguides
- Antenna Design and Analysis
- Mechanical and Optical Resonators
- Metamaterials and Metasurfaces Applications
- Semiconductor Quantum Structures and Devices
- Magneto-Optical Properties and Applications
- Photonic Crystals and Applications
- Electromagnetic Scattering and Analysis
- RFID technology advancements
- Superconducting and THz Device Technology
- Photonic Crystal and Fiber Optics
- Sensor Technology and Measurement Systems
- Advanced Frequency and Time Standards
- Photorefractive and Nonlinear Optics
- Electromagnetic Compatibility and Measurements
- Radio Astronomy Observations and Technology
SA Photonics (United States)
2020-2024
Hollister (United States)
2020-2023
Nexus (Italy)
2021-2023
Photonics (United States)
2021-2023
University of California, Santa Barbara
2015-2019
Glenn Research Center
2019
Johnson Space Center
2019
University of Zagreb
2007-2015
Silicon photonics research can be dated back to the 1980s. However, previous decade has witnessed an explosive growth in field. is a disruptive technology that poised revolutionize number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon ability use CMOS-like fabrication resulting high-volume production at low cost. This enabling factor bringing range areas where costs implementation using traditional photonic...
Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There strong evidence that these integrated technologies will play a key role in quantum systems as they grow few-qubit prototypes tens thousands qubits. The underlying laser with required functionality performance, can only be realized through integration components onto photonic circuits (QPICs) accompanying electronics. In last decade,...
We review recent breakthroughs in the silicon photonic technology and components, describe progress integrated circuits. Heterogeneous photonics has recently demonstrated performance that significantly outperforms native III/V components. The impact active circuits could have on interconnects, telecommunications, sensors, electronics is reviewed.
Silicon (Si) photonics research and development started more than 30 years ago has intensified in the last 15 as levels of device functionality, photonic integration, commercialization have all increased [1]. The key drivers for using Si arise from quality wafers superior processing capabilities developed funded by microelectronics industry. It promise to revolutionize industry same way that CMOS design revolutionized industry, driving down chip cost while enabling higher integration...
Heterogeneous silicon photonics is uniquely positioned to address the photonic sensing needs of upcoming autonomous cars and provide necessary cost reduction for widespread deployment. This because it allows wafer-scale active/passive integration, including optical sources. We present our recent research development interferometric gyroscopes LiDAR sensors. More specifically, we show a fully integrated gyroscope front-end occupying an area only 4.5 mm2. also first dense pitch phased array...
We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well ring-assisted DBR less than 500 Hz linewidth. The lasers are fabricated by heterogeneously integrating III-V material on Si gain section plus 15 mm long, low-kappa grating in an ultralow-loss silicon waveguide. low waveguide loss (0.16 dB/cm) long narrow bandwidth (2.9 GHz) essential to reducing the while maintaining high power single-mode operation....
Integrated photonics has profoundly affected a wide range of technologies underpinning modern society
Heterogeneous silicon photonics using wafer bonding is reaching maturity with commercial products for the data center market being shipped in volume. Here we give an overview of recent research area showing record device performance by best both worlds: III-V light generation and Si guiding light. Utilizing flexibility heterogeneous platform, narrow-linewidth widely tunable lasers as well fully integrated mode locked pulse powers duration were demonstrated. The ability to perform multiple...
We analyze optical phased arrays with aperiodic pitch and element-to-element spacing greater than one wavelength at channel counts exceeding hundreds of elements. optimize the between waveguides for highest side-mode suppression providing grating lobe free steering in full visible space while preserving narrow beamwidth. Optimum waveguide placement strategies are derived design guidelines sparse (> 1.5 λ > 3 average element spacing) given. Scaling to larger array areas by means tiling is considered.
We theoretically analyze, design, and measure the performance of a semiconductor laser with monolithically integrated external cavity. A ~4 cm long on-chip cavity is made possible by low-loss silicon waveguide platform. show tuning in excess 54 nm O-band as well significant reduction linewidth due to controlled feedback from The measured full range below 100 kHz best results are around 50 kHz. Approaches further improve such architectures described.
This paper presents recent results on widely-tunable narrow-linewidth semiconductor lasers using a ring-resonator based mirror as the extended cavity. Two generations of heterogeneous Si/InP photonic platform are presented. The first-generation lasers, with total footprint smaller than 0.81 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , showed an intrinsic linewidth ~2 kHz over 40 nm wavelength tuning range across C+L bands....
Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here, we present an silicon waveguide on 500 nm thick Silicon-On-Insulator (SOI) platform. Meter-scale million-Q resonators and tens of picometer bandwidth grating filters experimentally demonstrated. We design a low-loss low-reflection taper seamlessly integrate the with standard heterogeneous Si/III-V platform allow...
We describe the measurement and characterization of an interferometric optical gyroscope that uses integrated 3-m large-area silicon nitride waveguide coil with loss <;0.78 dB/m is compatible wafer-scale integration. The angle random walk bias instability were measured to be 8.52°/h <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> 58.7°/h, respectively. performance comparable a commercial rate grade gyroscope, demonstrating chip-scale...
We present the first chip-scale "integrated optical driver" (IOD) that can interrogate with a sensing coil to realize an interferometric gyroscope. The chip comprises light source, three photodiodes, two phase modulators and 3-dB couplers within area of 4.5 mm2. This allows for significant reduction in size, weight, power consumption cost gyroscopes.
We demonstrate a CMOS-foundry-based <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">S</mml:mi> </mml:mrow> <mml:msub> mathvariant="normal">i</mml:mi> <mml:mn>3</mml:mn> </mml:msub> mathvariant="normal">N</mml:mi> <mml:mn>4</mml:mn> </mml:math> photonic platform at blue and violet wavelengths that exhibits record-high intrinsic Qs of around 6 M 453 nm <mml:mo><</mml:mo> <mml:mn>1</mml:mn> <mml:mspace...
We have advanced the heterogeneous silicon nitride photonic platform, enabling operation at 780 nm wavelength range for rubidium sensors and other applications while remaining operable high temperatures up to 110 ∘ C. This platform surpasses existing technologies with superior integration of a comprehensive set active building-block devices enable fully integrated high-performance systems-on-a-chip.
We demonstrate a photonic microwave generator on the heterogeneous silicon-InP platform. Waveguide photodiodes with 3 dB bandwidth of 65 GHz and 0.4 A/W responsivity are integrated lasers that tune over 42 nm less than 150 kHz linewidth. Microwave signal generation from 1 to 112 is achieved.
Optical phased arrays (OPAs) are important as they allow beam steering and scanning with no moving parts. As their channel count increases, the complexity of control calibration becomes challenging. We propose an architecture algorithm that provide rapid on-chip scalable to arbitrary counts significantly reduced chip area overall compared previously proposed approaches. The optimized phase shifter tuning - Deterministic Stochastic Gradient Descent (DSGD) rapidly converges optimal state...
We review recent breakthroughs in silicon photonics technology and components describe progress photonic integrated circuits. Heterogeneous has recently demonstrated performance that significantly outperforms native III-V components. The impact active circuits could have on interconnects, telecommunications, sensors electronics is reviewed.
We present measurements of relative intensity noise versus various levels optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon the first time. A systematic comparison is made with heterogeneously integrated 1.55 well silicon. Our results indicate up to 20 dB reduced sensitivity compared wells.
We solve one of the key photonic challenges–bringing wafer-scale electrically pumped optical sources to a silicon nitride platform with world’s first demonstration heterogeneous GaAs-on-SiN lasers operating at wavelength below Si bandgap.
The development of photonic integrated circuits has historically been driven by communications. However, emerging markets and opportunities require platforms that can operate over a broader wavelength range, offer additional capabilities, or improve performance. This paper provides perspective on these the most promising approaches for addressing them, with focus support on-chip light generation amplification.