A5047223882- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Neural Networks and Reservoir Computing
- Quantum Information and Cryptography
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Surface Polishing Techniques
- Semiconductor Lasers and Optical Devices
- Metal and Thin Film Mechanics
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- Advanced Optical Sensing Technologies
- Microtubule and mitosis dynamics
- Photonic Crystals and Applications
- Advanced materials and composites
- Force Microscopy Techniques and Applications
- Protist diversity and phylogeny
- Advanced Fluorescence Microscopy Techniques
- Iterative Learning Control Systems
- Semiconductor materials and interfaces
- Micro and Nano Robotics
- High-Velocity Impact and Material Behavior
- Thin-Film Transistor Technologies
- Advanced machining processes and optimization
Sandia National Laboratories
2016-2021
Sandia National Laboratories California
2014-2016
University of New Mexico
2015-2016
Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There strong evidence that these integrated technologies will play a key role in quantum systems as they grow few-qubit prototypes tens thousands qubits. The underlying laser with required functionality performance, can only be realized through integration components onto photonic circuits (QPICs) accompanying electronics. In last decade,...
We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this operation. Our APD is fabricated using a selective epitaxial growth process resulting in separate absorption charge multiplication (SACM) design compatible with our silicon photonics platform. Single efficiency rate measured as function temperature order to understand optimize performance characteristics...
Field tests of a silicon photonics quantum-key-distribution encoder demonstrate scalable, affordable, high-speed solution to securing long-distance communication networks against intrusions from quantum computers.
We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially waveguide-coupled linear mode photodiodes varying lateral regions different implant dimensions are fabricated their illuminated device characteristics high-speed performance is measured. report record gain-bandwidth product of 432 GHz highest...
Abstract A sensitive optical detector is presented based on a deeply depleted graphene-insulator-semiconducting (D 2 GIS) junction, which offers the possibility of simultaneously leveraging advantages both charge integration and localized amplification. Direct read-out built-in amplification are accomplished via photogating graphene field-effect transistor (GFET) by carriers generated within low-doped silicon substrate. Analogous to metal-oxide-semiconducting photo-generated collects in...
In this paper, we test Si vertical-junction disk modulators and waveguide-integrated Ge p-i-n photodiodes (PDs) to see how the key performance metrics are affected by <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> Co gamma radiation (total ionizing dose), a common proxy for simulating mix of high-energy ion particle flux. It is found that reverse bias dark current increases significantly both devices after 1-Mrad(Si) exposure. As...
We present theoretical modeling and experimental results of the thermal crosstalk time constants micro-disk modulators as a function spacing between nearby devices, taking into consideration effects dense metallic interconnects.
We report on thermally tunable modulators, with efficiencies up to 2.16 nm/mW. Efficient performance was accomplished through integrated heater design and Si substrate removal, where the heavily N+ doped element is into body of microdisk. For comparison, modulators an external were also tested small diameter removed. The N+Si bars fabricated outside Efficiency for 0.68 nm/mW Both types thermal experimentally simulated a complete understanding substrate's influence heat dissipation both...
We present our experimental results of ultra efficient (up to 2.16 nm/mW) thermally tunable modulators with n-type heaters and the Si substrate removed. To knowledge, this is most modulator demonstrated at 1550nm date. include externally heated commensurate performance enhancements through removal.
We present experimental results for a Ge on Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Our linear mode APD has gain-bandwidth product in excess of 200 GHz. Furthermore, we demonstrate error free operation (BER<; 10-12) using pseudo-random bit sequence (PBRS) data at 10 Gb/s.
Nanoscale transport using the kinesin-microtubule system has been successfully used in applications ranging from self-assembly, to biosensing, biocomputation. Realization of such necessitates robust microtubule motility particularly presence complex sample matrices that can affect interactions motors with surface and function. In present work, we explored how chemical nature nanoscale topology various surfaces affected transport. Specifically, characterized on three distinct interfaces: (i)...