A5102770958- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Advanced Fiber Optic Sensors
- Photonic Crystals and Applications
- Advanced Thermoelectric Materials and Devices
- Neural Networks and Reservoir Computing
- Thermal properties of materials
- Mechanical and Optical Resonators
- Thermal Radiation and Cooling Technologies
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Laser-Matter Interactions and Applications
- Advanced Optical Sensing Technologies
- Advanced Optical Network Technologies
- Spectroscopy and Laser Applications
- Magneto-Optical Properties and Applications
- Advanced Semiconductor Detectors and Materials
- Photorefractive and Nonlinear Optics
- Laser Design and Applications
- Silicon Nanostructures and Photoluminescence
University of California, Santa Barbara
2016-2025
Office of Energy Efficiency and Renewable Energy
2018-2024
University of California System
2003-2023
Technical University of Denmark
2023
National Oceanic and Atmospheric Administration
2023
Hollister (United States)
2023
Chinese University of Hong Kong
2022
California Institute of Technology
2021
Quintessence Biosciences (United States)
2021
Joint Quantum Institute
2021
An electrically pumped light source on silicon is a key element needed for photonic integrated circuits silicon. Here we report an AlGaInAs-silicon evanescent laser architecture where the cavity defined solely by waveguide and needs no critical alignment to III-V active material during fabrication via wafer bonding. This runs continuous-wave (c.w.) with threshold of 65 mA, maximum output power 1.8 mW differential quantum efficiency 12.7 % operating temperature 40 degrees C. approach allows...
Silicon photonics research can be dated back to the 1980s. However, previous decade has witnessed an explosive growth in field. is a disruptive technology that poised revolutionize number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon ability use CMOS-like fabrication resulting high-volume production at low cost. This enabling factor bringing range areas where costs implementation using traditional photonic...
Abstract Lithium niobate on insulator (LNOI) technology is revolutionizing the lithium industry, enabling higher performance, lower cost and entirely new devices applications. The availability of LNOI wafers has sparked significant interest in platform for integrated optical applications, as offers attractive material properties niobate, while also offering stronger confinement a high element integration density that driven success more mature silicon nitride (SiN) photonics platforms. Due...
Quantum Communication is the art of transferring an unknown quantum state from one location, Alice, to a distant one, Bob. This non-trivial task because no-cloning theorem which prevents merely using only classical means.
Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost optical transmitters, receivers buffers. In this paper, passive technologies described, including polarization handling, light non-reciprocity loss reduction. The design rule beam splitters based on asymmetrical directional couplers is summarized several novel designs ultra-short reviewed. A concept realizing a splitter–rotator presented with very simple...
Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for modulation response, resonance frequency, damping rate, K factor to include these effects. They show theoretically experimentally that carrier lead significant low-frequency parasitic-like rolloff reduces response by as much six in also that, addition, it leads reduction effective differential gain thus while nonlinear...
The emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. absorption edge was modulated by confined Stark effect Franz-Keldysh (QCFK) for wells, in which, first approximation, product piezoelectric field, FPZ, L exceed valence band discontinuity, ΔEV. In this case, holes are triangular potential formed at one side producing apparent Stokes-like shift. Under condition that FPZ×L exceeds conduction discontinuity ΔEC,...
All-optical label swapping is a promising approach to ultra-high packet-rate routing and forwarding directly in the optical layer. In this paper, we review results of DARPA Next Generation Internet program all-optical at University California Santa Barbara (UCSB). We describe overall network encapsulate packets with labels process functions independent packer bit rate format. Various approaches coding using serial subcarrier multiplexing addressing associated techniques for erasure...
Silicon photonics is advancing rapidly in performance and capability with multiple fabrication facilities foundries having advanced passive active devices, including modulators, photodetectors, lasers. Integration of electronics has been key to increasing the speed aggregate bandwidth silicon based assemblies, approaches achieving transceivers capacities 1.6 Tbps higher. Progress rapid as well, state-of-the-art chips switches many tens billions transistors. However, electronic system often...
We characterize an approach to make ultra-low-loss waveguides using stable and reproducible stoichiometric Si3N4 deposited with low-pressure chemical vapor deposition. Using a high-aspect-ratio core geometry, record low losses of 8-9 dB/m for 0.5 mm bend radius down 3 2 are measured ring resonator optical frequency domain reflectometry techniques. From waveguide loss model that agrees well experimental results, we project 0.1 total propagation is achievable at 7 this approach.
In this paper, we review the current status of hybrid silicon photonic integration platform with emphasis on its prospects for increased complexity. The is maturing fast as increasingly complex circuits are reported tens integrated components including on-chip lasers. It shown that well positioned and holds great potential to address future needs medium-scale circuits.
We demonstrate a 16-channel, independently tuned waveguide surface grating optical phased array in silicon for two dimensional beam steering with total field of view 20° x 14°, width 0.6° 1.6°, and full-window background peak suppression 10 dB.
A novel concept for an ultracompact polarization splitter-rotator is proposed by utilizing a structure combining adiabatic taper and asymmetrical directional coupler. The singlemode at the input end while it becomes multimode other end. When light propagates along structure, TM fundamental mode launched narrow efficiently (close to 100%) converted first higher-order TE wide because of coupling between them. By using coupler that has two adjacent waveguides with different core widths, then...
We demonstrate a wafer-bonded silica-on-silicon planar waveguide platform with record low total propagation loss of (0.045 ± 0.04) dB/m near the free space wavelength 1580 nm. Using coherent optical frequency domain reflectometry, we characterize group index, fiber-to-chip coupling loss, critical bend radius, and these waveguides.
We compare different designs for very high-speed (millimeter-wave) long-wavelength photodetectors, materials such detectors, and ways of characterizing the speed these devices. Experimental results are given, showing response with bandwidths beyond 50 GHz, impulse responses less than 10 ps, detection sensitivities to 0.1 fJ in packaged Discussed is inherent bandwidth-efficiency limit conventional p-i-n which then compared theoretical experimental waveguide-geometry detectors.
In this paper, we explore electron filtering as a technique to increase the Seebeck coefficient and thermoelectric power factor of heterostructured materials over that bulk. We present theoretical model in which can be increased an ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$-based composite material. Experimental measurements cross-plane are presented confirm importance decouple electrical conductivity factor.
We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide fabricated from the as-grown material achieve room temperature continuous wave thresholds as low 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of active region improves T0 range 100–200 K while maintaining high powers. Device yield is presented showing repeatable across different dies wafers.
Abstract An effective solution to enhance the capacity of an optical-interconnect link is utilizing advanced multiplexing technologies, like wavelength-division-multiplexing (WDM), polarization-division (PDM), spatial-division (SDM), bi-directional multiplexing, etc. On-chip (de)multiplexers are necessary as key components for realizing these systems and they desired have small footprints due limited physical space on-chip optical interconnects. As silicon photonics has provided a very...
In this work we present the first fully-integrated free-space beam-steering chip using hybrid silicon platform. The photonic integrated circuit (PIC) consists of 164 optical components including lasers, amplifiers, photodiodes, phase tuners, grating couplers, splitters, and a crystal lens. PIC exhibited steering over 23° x 3.6° with beam widths 1° 0.6°.