In this paper, we review the current status of hybrid silicon photonic integration platform with emphasis on its prospects for increased complexity. The is maturing fast as increasingly complex circuits are reported tens integrated components including on-chip lasers. It shown that well positioned and holds great potential to address future needs medium-scale circuits.

We demonstrate a wafer-bonded silica-on-silicon planar waveguide platform with record low total propagation loss of (0.045 ± 0.04) dB/m near the free space wavelength 1580 nm. Using coherent optical frequency domain reflectometry, we characterize group index, fiber-to-chip coupling loss, critical bend radius, and these waveguides.

Abstract Technologies for efficient generation and fast scanning of narrow free-space laser beams find major applications in three-dimensional (3D) imaging mapping, like Lidar remote sensing navigation, secure optical communications. The ultimate goal such a system is to reduce its size, weight, power consumption, so that it can be mounted on, e.g. drones autonomous cars. Moreover, beam should ideally done at video frame rates, something beyond the capabilities current opto-mechanical...

In this work we present the first fully-integrated free-space beam-steering chip using hybrid silicon platform. The photonic integrated circuit (PIC) consists of 164 optical components including lasers, amplifiers, photodiodes, phase tuners, grating couplers, splitters, and a crystal lens. PIC exhibited steering over 23° x 3.6° with beam widths 1° 0.6°.

The vast majority of work on waveguide-coupled resonators focuses decreasing losses in the waveguide and coupling region. Here we present fully integrated based an ultralow-loss Si3N4 platform. By tailoring directional coupler excitation to resonators, are able achieve lower loss single-mode multimode widths compared straight bus couplers. This allows us demonstrate record-high coupled intrinsic quality factor (Qint) values 81 million at a 9.65 mm bend radius, with future direction both...

In this paper, we review the hybrid silicon photonic integration platform and its use for optical links. platform, a III/V layer is bonded to fully processed silicon-on-insulator wafer. By changing bandgap of quantum wells (QW), low-threshold-current lasers, high-speed modulators, photodetectors can be fabricated operating at wavelengths 1.55 μm. With QW intermixing technology, these components integrated with each other complete interconnect realized on-chip. The bonding process technology...

Planar waveguides with ultra-low optical propagation loss enable a plethora of passive photonic integrated circuits, such as splitters and combiners, filters, delay lines, components for advanced modulation formats. An overview is presented the status field including design, trade-off between bend radius loss, fabrication rationale. The characterization methods to accurately measure are discussed. Some typical examples device circuit applications presented. even wider range becomes possible...

We demonstrate a novel integrated silicon and ultra-low-loss Si3N4 waveguide platform. Coupling between layers is achieved with (0.4 ± 0.2) dB of loss per transition 20 nm 3-dB bandwidth for one tapered coupler design (0.8 100 another. The minimum propagation measured in the waveguides 1.2 dB/m 1590 wavelength regime.

A 16-channel 200 GHz arrayed-waveguide grating (AWG) (de)-multiplexer is demonstrated experimentally by utilizing Si3N4 buried optical waveguides, which have 50 nm-thick cores and a 15 μm-thick SiO2 cladding. The structure with an ultra-thin core layer helps to reduce the scattering due sidewall roughness consequently shows very low loss of about 0.4~0.8 dB/m. When using this type waveguide for AWG (de)multiplexer, there no problem associated gap refill upper-cladding material even when...

We demonstrate planar Si3N4 ring resonators with ultra-high quality factors (Q) of 19 million, 28 and 7 million at 1060 nm, 1310 1550 respectively. By integrating the ultra-low-loss laterally offset waveguide directional couplers, optical add-drop notch filters are demonstrated to have ultra-narrow bandwidths 16 MHz, 38 300 MHz These highest Qs reported for ultra-narrowband microwave photonic can be realized based on these high-Q resonators.

A unique and novel platform that combines III-V silicon photonic components with ultra-low loss nitride waveguides for monolithic integration of circuits is presented. Successful (proof-of-principle) eight hybrid III-V/silicon photodetectors an arrayed waveguide grating shown. The InGaAs photodiodes in this had average fiber-coupled responsivity 0.36 A/W at 1550 nm, 30 GHz electrical bandwidth, operated up to 50 Gb/s. AWG insertion 0.85 dB adjacent-channel cross-talk less than -38 dB.

We report high output power and high-gain semiconductor optical amplifiers integrated on a heterogeneous silicon/III-V photonics platform. The devices produce 25 dB of unsaturated gain for the highest design, 14 dBm saturated design. amplifier structure is also suitable lasers, can be readily with multitude silicon photonic circuit components. These are useful wide range circuits. show design method optimizing desired characteristics. incorporates low loss reflection transition between...

Silicon photonics is the prime candidate technology to realize an optical network-on-chip for global interconnects in future multi-core processors. Since silicon lacks efficient native-substrate sources, question whether off-chip or heterogeneously integrated on-chip sources are preferred technology. In this paper we argue, based on arguments of energy efficiency and proportionality, that provide a dramatic overall system improvement, as compared using (comb) source. We estimate increase...

In this paper we investigate reducing threshold and improving the efficiency speed of distributed feedback hybrid silicon lasers. A low current 8.8 mA was achieved for a 200 μm cavity at 20 °C. 3 dB bandwidth 9.5 GHz as well 12.5 Gb/s direct modulation DFB laser diode on platform first time.

We demonstrate the design, fabrication, and characterization of a 4-bit tunable delay in an ultra-low-loss Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> planar platform. Temporal delays up to 12.35 ns with resolution 0.85 are measured, for total 2.407 meters propagation length. The TE waveguide loss is measured be (1.01±0.06) dB/m at wavelength 1550 nm lowest (0.57±0.08) 1591 nm.

This paper provides a key solution for integrating spintronic memories with photonic integrated circuits, all-optical switching and reading of nanoscale magnetic bits. Problems associated nonlinear absorption the intrinsically weak magneto-optical effect are solved by hybrid scheme, exploiting plasmonic resonators. Thus authors have developed device concept that paves way toward ultrafast, energy-efficient advanced on-chip applications.

Abstract We develop a quantum photonic platform that interconnects high-quality dot single-photon source and low-loss integrated circuit made in silicon nitride. The is characterized programmed to demonstrate various multiphoton applications, including bosonic suppression laws entanglement generation. results show promising technological route forward scale-up hardware.

We investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The is modeled using Maxwell's wave equation with a small amount refractive index perturbation. Effective n2 used to describe third-order nonlinearity, which linearly proportional optical intensity. effective measured continuous-wave self-phase modulation shows agreement theoretical calculation. waveguide 2.8-μm wide 80-nm thick Si3N4 core has low high power handling capability, an about...

The first integrated multiwavelength laser based on an arrayed waveguide grating (AWG) fabricated a silicon-on-insulator wafer is presented. It consists of Fabry-Perot cavities with hybrid silicon amplifiers and intracavity filter in the form AWG channel spacing 360 GHz. Four-channel lasing operation shown. Single-sided fiber-coupled output powers as high 35 μW are measured. device shows subnanosecond rise fall times, direct modulation at 1 GHz gives open eye extinction ratio 7.7 dB.

A chip-scale optical source with integrated beam steering is demonstrated. The chip was fabricated using the hybrid silicon platform and incorporates an on-chip laser, waveguide splitter, amplifiers, phase modulators, surface gratings to comprise phased array across a 12° field of view in one axis. Tuning used achieve 1.8°(steered axis)×0.6°(nonsteered axis) width 7 dB background suppression for arbitrary direction within view.

Here we experimentally demonstrate room temperature, continuous-wave (CW), 2.0 μm wavelength lasers heterogeneously integrated on silicon. Molecular wafer bonding of InP to Si is employed. These hybrid silicon operate CW up 35°C and emit 4.2 mW single-facet power at temperature. III-V tapers transfer light from a III-V/silicon optical mode into waveguide mode. enable the realization number sensing detection applications in compact photonic systems.

Abstract In this article, the potential of photonic integrated circuits (PICs) for modern gas sensing applications is discussed. Optical detection systems can be found at high-end currently available detectors, and PIC-based optical spectroscopic devices promise a significant reduction in size cost. The performance such reviewed here. This discussion not limited to one semiconductor platform, but includes several platforms operating from visible wavelength range up long infrared. different...

First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation 4.6 GHz from a 9 mm long device verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched time heavily up-chirped with value 20 ps/nm, contrary to what normally observed passively mode-locked semiconductor lasers. complete spectrum shown be coherent over 10 nm. From 7 Q-switching...

The optical properties of two hybrid silicon taper designs are investigated. These tapers convert the mode from a waveguide to III/V waveguide. A passive chip was fabricated with an epitaxial layer similar those used in lasers. To separate scattering and mismatch quantum-well absorption, active this paper designed be at 1410 nm, allow measurements 1550 nm. Using cutback structures, loss reflection quantified. Taper losses between 0.2 0.6 dB per reflections below -41 measured.

In this Letter we introduce a complementary metal-oxide semiconductor (CMOS)-compatible low-loss Si3N4 waveguide platform for nonlinear integrated optics. The has moderate coefficient of 285 W/km, but the achieved propagation loss only 0.06 dB/cm and ability to handle high optical power facilitate an optimal length wavelength conversion. We observe constant quadratic dependence four-wave mixing (FWM) process on continuous-wave (CW) pump when operating in C-band, which indicates that...