We review recent breakthroughs in the silicon photonic technology and components, describe progress integrated circuits. Heterogeneous photonics has recently demonstrated performance that significantly outperforms native III/V components. The impact active circuits could have on interconnects, telecommunications, sensors, electronics is reviewed.

An ideal photonic integrated circuit for nonlinear applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- third-order coefficients, but also shows propagation loss in both the Si3N4 LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two is essential various on-chip...

The mid-infrared spectral region, 2–20 μm, is of great interest for sensing and detection applications, in part because the vibrational transition energies numerous molecules fall that region. Silicon photonics a promising technology to address many these applications on single integrated, low-cost platform. Near-infrared light sources, heterogeneously integrated silicon, have existed more than decade, there been incorporations optical devices silicon platforms. However, no lasers fully onto...

Abstract Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr frequency comb generation in microresonators, and supercontinuum conversion photonic waveguides. A high efficiency is enabling for applications optics, including such broad directions as high‐speed optical signal processing, metrology, quantum communication computation. In this work, a gallium‐arsenide‐on‐insulator (GaAs) platform photonics...

Far-UVC light in the wavelength range of 200-230 nm has attracted renewed interest because its safety for human exposure and effectiveness inactivating pathogens. Here we present a compact solid-state far-UVC laser source based on second-harmonic generation (SHG) using low-cost commercially-available blue diode pump. Leveraging high intensity nanophotonic waveguide heterogeneous integration, our approach achieves Cherenkov phase-matching across bonded interface consisting silicon nitride...

Heterogeneous integration enables the construction of silicon (Si) photonic systems, which are fully integrated with a range passive and active elements including lasers detectors. Numerous advancements in recent years have shown that heterogeneous Si platforms can be extended beyond near-infrared telecommunication wavelengths to mid-infrared (MIR) (2-20 μm) regime. These hold potential for an extensive sensing applications necessary components MIR technologies now been demonstrated....

Mid-infrared (MIR) silicon photonic systems show great promise for miniaturizing a variety of sensing and detection technologies. Rapid progress has been made in recent years, numerous passive active MIR devices have now constructed on various silicon-based platforms. We previously reported the heterogeneous integration Fabry–Perot distributed feedback quantum cascade lasers (QCLs) operating at 4.8 μm. Interband (ICLs) will be preferred many on-chip technologies because they operate 3–6 μm...

The microscale integration of mid- and long-wave-infrared photonics could enable the development fieldable, robust chemical sensors, as well highly efficient infrared frequency converters. However, such technology would be defined by choice material platform, which immediately determines strength types optical nonlinearities available, transparency window, modal confinement, physical robustness. In this work, we demonstrate a new suspended AlGaAs waveguides integrated on silicon, providing...

Here we experimentally demonstrate room temperature, continuous-wave (CW), 2.0 μm wavelength lasers heterogeneously integrated on silicon. Molecular wafer bonding of InP to Si is employed. These hybrid silicon operate CW up 35°C and emit 4.2 mW single-facet power at temperature. III-V tapers transfer light from a III-V/silicon optical mode into waveguide mode. enable the realization number sensing detection applications in compact photonic systems.

We review recent breakthroughs in silicon photonics technology and components describe progress photonic integrated circuits. Heterogeneous has recently demonstrated performance that significantly outperforms native III-V components. The impact active circuits could have on interconnects, telecommunications, sensors electronics is reviewed.

This article is a part of the Special Issue on Intelligent Systems for Space Exploration. The Payload Experiment (IPEX) CubeSat that flew from December 2013 through January 2015 and validated autonomous operations onboard instrument processing product generation Module Hyperspectral Infrared Imager (HyspIRI) mission concept. IPEX used several artificial intelligence technologies. First, machine learning computer vision in its processing. machine-learned random decision forests to classify...

Nanophotonic waveguides with sub-wavelength mode confinement and engineered dispersion profiles are an excellent platform for application-tailored nonlinear optical interactions at low pulse energies.Here, we present fully air clad suspended-silicon infrared frequency comb generation bandwidth limited only by the silicon transparency.The achieved spectra lithographically tailored to span 2.1 octaves in mid-infrared (2.0-8.5 µm or 1170-5000 cm -1 ) when pumped 3.10 100 pJ pulses.Novel...

Abstract A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It therefore compatible with low‐cost and high‐volume fabrication infrastructures, can be efficiently coupled other passive devices in photonic circuit. On‐chip gain larger than 13 dB demonstrated 20 °C, 3‐dB bandwidth of ∼75 nm centered 2.01 µm. No saturation the observed for on‐chip input power up 0 dBm,...

A design study is presented for difference-frequency generation (DFG) to the mid-infrared (MIR) at 2.3 µm in AlGaAs waveguides heterogeneously integrated on silicon. Perfect phase matching (PhM) achieved simulations by engineering dimensions of waveguide and tuning wavelengths input sources. An optimal found with a width 1196 nm height 146 length about 5 mm. We expect signal output power 1 mW 2389 wavelength range from 2231 2574 use tunable sources around 940 1550 nm. The tolerance required...

Integrated coherent sources in the mid-infrared (mid-IR) are essential for spectroscopy and quantum frequency conversion (QFC) of single photons to enable their use fiber-based applications. Direct emission mid-IR is limited requires complex fabrication large power consumption. Here, a laser demonstrated with continuous tuning range >80 nm centered around 2360 nm, through difference-frequency generation (DFG). The nonlinear coefficient d₁₄ gallium arsenide (GaAs) aluminum (AlGaAs) on...

Atomic and trapped-ion systems are the backbone of a new generation quantum-based positioning, navigation, timing (PNT) technologies. The miniaturization such quantum offers tremendous technological advantages, especially reduction system size, weight, power consumption. Yet, this has been limited by absence compact, standalone photonic integrated circuits (PICs) at wavelengths suitable for these instruments. Mobilizing requires development fully integrated, on-chip, active components...

We present the design of a novel platform that is able to combine optical frequency bands spanning 4.2 octaves from ultraviolet mid-wave infrared into single, low M2 output waveguide. and realization key component in this combines wavelength 350 nm - 1500 6500 with demonstrated efficiency greater than 90% near-infrared infrared. The multi-octave spectral beam combiner concept realized using an integrated silicon nitride waveguides waveguides. Simulated bandwidth shown be over four octaves,...

Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon electronic technologies. Heterogeneous by bonding III-V wafers waveguides has been employed previously build integrated diode lasers for wavelengths from 1310 2010 nm. Recently, Fabry-Pérot Quantum Cascade Lasers on provided a 4800 nm light source applications. Distributed feedback (DFB) appealing many high-sensitivity...

An arrayed waveguide grating (AWG) at 760 nm is demonstrated with an insertion loss smaller than 0.5 dB. Interface roughness and length errors contribute much more to scattering phase longer wavelengths, thus requiring improved design fabrication. This Letter details how this achieved by minimizing interfacial scattering, side-order excitation, in the AWG. With silicon nitride core dioxide clad waveguides on silicon, AWG compatible heterogeneously integrated lasers for on-chip spectral beam...

Photonic-integrated circuits fabricated on a heterogeneously integrated silicon platform have demonstrated record levels of integration and communication capacity. As photonic-integrated become larger more complex, designing analyzing them demand modeling simulation methodologies employed in matured electronic design automation. In this paper, the development compact models for building blocks optical network-on-a-chip is introduced. These are implemented both SPICE-compatible electronics...

Low-loss arrayed waveguide gratings (AWGs) are demonstrated at a 2.0-μm wavelength. These devices promote rapidly developing photonic applications, supported by the recent development of mid-infrared lasers integrated on silicon (Si). Multi-spectral circuits envisioned since AWGs fabricated with 500-nm-thick Si-on-insulator platform compatible recently and semiconductor optical amplifiers Si. Characterization AWG-ring method improves on-chip transmission uncertainty to ∼6% compared...

Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, intense interactions nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) GaAs-on-insulator with unprecedented efficiency 40 W$^{-1}$ for single-pass device. This result is achieved by minimizing...

A resonator is characterized with two cascaded arrayed waveguide gratings (AWGs) in a ring formation. From this structure, the on-chip transmittance of single AWG extracted, independent coupling efficiency. It provides improved measurement accuracy, which essential for developing AWGs extremely low loss. Previous methods normalize off-chip to that reference identical coupling, leading an uncertainty ∼14 % on extracted transmittance. shown here proposed "AWG-ring" method reduces value ∼3 %....

Abstract An external‐cavity diode laser for 1550‐nm wavelength is reported with ultra‐low noise, high power coupled to a fiber, and fast tunability. These characteristics enable the generation of an optical frequency comb in silica micro‐resonator single‐soliton state. Neither amplifier nor modulator used experiment. This demonstration greatly simplifies soliton setup represents significant step forward fully integrated system.

An alternative method for characterizing optical propagation in waveguide structures based on scattered light imaging is presented and demonstrated the spectral range of 450–980 nm. Propagation losses as low 1.40 dB/cm are alumina spiral waveguides. AlGaAs-on-insulator waveguides measured using a tunable laser compared to cut-back measurements. On AlGaAs, one-sigma uncertainty 2.23 TE TM polarizations obtained repetitions measurements conducted same waveguide, highlighting approach’s...