We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, InN, along with their ternary quaternary alloys. Based on review existing literature, complete consistent parameter sets are given all materials. Emphasizing quantities required structure calculations, we tabulate direct indirect energy gaps, spin-orbit, crystal-field...

We present a comprehensive and up-to-date compilation of band parameters for all the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite zinc-blende GaN, InN, AlN, along with their alloys) (2) “dilute” (zinc-blende ternaries quaternaries in which relatively small fraction N is added host material, e.g., GaAsN GaInAsN). As our more general review semiconductor [I. Vurgaftman et al., J. Appl. Phys. 89,...

We discuss an improved mid-wave infrared diode laser structure based on InAs-Ga1−xInxSb- InAs-Ga1−xAlxSb Type-II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, excellent electrical confinement.

We review the current status of interband cascade lasers (ICLs) emitting in midwave infrared (IR). The ICL may be considered hybrid a conventional diode laser that generates photons via electron–hole recombination, and an intersubband-based quantum (QCL) stacks multiple stages for enhanced efficiency. Following brief historical overview, we discuss theoretical aspects active region core designs, growth by molecular beam epitaxy, processing broad-area, narrow-ridge, distributed feedback (DFB)...

We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing steady-state photoconductive response to frequency-doubled CO2 radiation, at intensities varying over four orders of magnitude. Theoretical rates derived, based on a k⋅p calculation superlattice band structure model which employs no adjustable parameters. At 77 K, both experiment theory yield lifetimes are approximately two magnitude longer...

Field- and temperature-dependent magnetotransport measurements on Bi layers grown by molecular-beam epitaxy have been analyzed mixed-conduction techniques. In the thin-film limit, net hole density scales inversely with layer thickness while mobility linearly. By studying minority electron concentration as a function of temperature in range 100--300 K, we unambiguously confirmed long-standing theoretical prediction that quantum confinement should convert from semimetal to semiconductor at...

A comprehensive theory developed previously for optical heating in semiconductors is applied to the calculation of laser damage thresholds Ge, Si, InSb, and GaAs. The calculated agree well with experimental values over a broad range wavelengths pulse durations. results demonstrate that dynamic nature material’s transport properties changing temperature laser-generated carrier density has significant effect on process, particularly at short

The mid-infrared spectral region, 2–20 μm, is of great interest for sensing and detection applications, in part because the vibrational transition energies numerous molecules fall that region. Silicon photonics a promising technology to address many these applications on single integrated, low-cost platform. Near-infrared light sources, heterogeneously integrated silicon, have existed more than decade, there been incorporations optical devices silicon platforms. However, no lasers fully onto...

The midwave infrared interband cascade laser (ICL) can operate at threshold power densities 30 times lower than those of the quantum laser. This is ultimately attributable to much longer carrier lifetime, rather specifics cavity dimensions and mirror reflectivities. ICL therefore an attractive candidate for insertion into portable, battery-powered chemical sensors now being developed this spectral region. We review characteristics ICLs operating wavelengths from 2.9 5.5 μm, show that their...

We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for mid-wave infrared spectral region. discuss present understanding mechanisms limiting ICL performance provide a perspective on potential future improvements. Such device properties as threshold current power densities, continuous-wave output power, wall-plug efficiency are compared with those quantum laser. Newer classes such frequency...

Since their inception, optical frequency combs have transformed a broad range of technical and scientific disciplines, spanning time keeping to navigation. Recently, dual comb spectroscopy has emerged as an attractive alternative traditional Fourier transform spectroscopy, since it offers higher measurement sensitivity in fraction the time. Midwave infrared (mid-IR) are especially promising effective means for probing strong fundamental absorption lines numerous chemical biological agents....

The authors propose two novel sources emitting in the mid-IR: type-II and type-I interband cascade lasers, perform detailed gain calculations. High radiative efficiencies are expected, since phonon processes which dominate relaxation intersub-band quantum laser effectively eliminated.

A new W-structured type-II superlattice photodiode design, with graded band gap in the depletion region, is shown to strongly suppress dark currents due tunneling and generation-recombination processes. The long-wave infrared (LWIR) devices display 19%–29% quantum efficiency substantially reduced currents. median dynamic impedance-area product of 216Ωcm2 for 33 10.5μm cutoff at 78K comparable that state-of-the-art HgCdTe-based photodiodes. sidewall resistivity ≈70kΩcm untreated mesas also...

We have successfully grown Bi2Te3 thin films on CdTe(111)B using molecular-beam epitaxy. Structural and transport properties been investigated in situ reflection high-energy electron diffraction, θ–2θ x-ray diffraction analysis, thermopower, Hall measurements. Both the crystallinity are found to be strongly affected by nonstoichiometry. The most stoichiometric sample had a high crystallinity, mobility. However, with excess Te reduced lattice constant, poorer magnitude of All these...

Two different approaches, a photoconductive response technique and correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding 3.1–4.8 μm, the room-temperature coefficients for seven samples are found be nearly an order-of-magnitude lower than typical type-I results same wavelength. The data imply that at this temperature, rate is relatively insensitive details band...

We report a five-stage interband cascade laser that operates at λ=3.75μm in cw mode up to maximum temperature of 319K. With gold electroplating, epitaxial-side-up mounting, and one facet coated for high reflectivity, 3mm×9.2μm ridge emits over 10mW power 300K.

A theory for optical heating in semiconductors has been formulated terms of the coupled diffusion equations heat and excess carrier density. The solution temperature increase near surface material is given by a general expression which applicable to broad range excitation conditions. present considerably more comprehensive than previous closed-form results that transport properties are allowed be arbitrary functions photoexcited-carrier density temperature.

Room temperature spasing of surface plasmon polaritons at 1.46 μm wavelength has been demonstrated by sandwiching a gold-film plasmonic waveguide between optically pumped InGaAs quantum-well gain media. The spaser exhibits narrowing, the expected transverse-magnetic polarization, and mirror feedback provided cleaved facets in 1-mm long cavity fabricated with flip-chip approach. 1.06-μm pump-threshold ~60 kW/cm2 is good agreement calculations. architecture readily adaptable to all-electrical...

We discuss the state-of-the-art performance of interband cascade lasers emitting in 3–5 μm spectral band. Broad-area devices with five active stages display pulsed threshold current densities as low 400 A cm−2 at room temperature. Auger decay rates are extracted from analysis and differential slope efficiencies nearly 30 lasers, found to be significantly lower than was anticipated based on prior information. New designs also produce ICLs room-temperature internal losses ≈6 cm−1. The...

The interband cascade laser (ICL) concept provides robust and efficient emission in the midwave infrared spectral band. While geometry is somewhat analogous to that of a quantum employing intersubband transitions, ICL implementation exploits type-II band alignment GaSb-based material system. A semimetallic overlap at boundary between electron hole injector regions automatically generates carriers with densities tunable by confinement. Electrical injection then replenishes already present...

We have substantially improved the performance of interband cascade lasers emitting at λ = 4.7 and 5.6 μm, by applying recently-pioneered approach heavily doping injector regions to rebalance electron hole concentrations in active quantum wells. Ridges ≈10 μm width, 4 mm length, high-reflectivity back facets achieve maximum continuous wave operating temperatures 60°C 48°C, respectively. The threshold power density ≈1 kW/cm2 T 25°C is over an order magnitude lower than for state-of-the-art...

A photoacoustic module (PAM) for methane detection was developed by combining a novel 3.2 μm interband cascade light emitting device (ICLED) with compact differential cell. The ICLED 22-stage active core emitted collimated power of ~700 μW. concave Al-coat reflector positioned adjacent to the cell enhance gas absorption length. Assembly and resulted in robust portable PAM without any moving parts. performance evaluated terms operating pressure, sensitivity linearity. 1σ limit 3.6 ppmv...

Heterogeneous integration enables the construction of silicon (Si) photonic systems, which are fully integrated with a range passive and active elements including lasers detectors. Numerous advancements in recent years have shown that heterogeneous Si platforms can be extended beyond near-infrared telecommunication wavelengths to mid-infrared (MIR) (2-20 μm) regime. These hold potential for an extensive sensing applications necessary components MIR technologies now been demonstrated....

Mid-infrared (MIR) silicon photonic systems show great promise for miniaturizing a variety of sensing and detection technologies. Rapid progress has been made in recent years, numerous passive active MIR devices have now constructed on various silicon-based platforms. We previously reported the heterogeneous integration Fabry–Perot distributed feedback quantum cascade lasers (QCLs) operating at 4.8 μm. Interband (ICLs) will be preferred many on-chip technologies because they operate 3–6 μm...