A5019282114- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Neural Networks and Reservoir Computing
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Advanced Memory and Neural Computing
- Advanced Optical Sensing Technologies
- Semiconductor materials and devices
- Advanced Fiber Optic Sensors
- Nanowire Synthesis and Applications
- Mechanical and Optical Resonators
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Topological and Geometric Data Analysis
- Photoreceptor and optogenetics research
- Optical Coatings and Gratings
- Mathematical and Theoretical Epidemiology and Ecology Models
- Semiconductor materials and interfaces
- 3D IC and TSV technologies
- Advanced Neuroimaging Techniques and Applications
- Microgrid Control and Optimization
University of Michigan–Ann Arbor
2023-2025
Hewlett Packard Enterprise (United States)
2016-2024
Hewlett-Packard (United States)
2015-2024
University of California, Santa Barbara
2007-2023
Shandong Jianzhu University
2012-2023
Alibaba Group (United States)
2022
U.S. National Science Foundation
2022
The University of Texas at Arlington
2022
Polytechnic University of Turin
2022
Hewlett Packard Enterprise (Ireland)
2020
Abstract In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources a silicon waveguide platform, suitable inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize III‐V/SOI integration: one based molecular wafer other DVS‐BCB adhesive bonding. The micro‐disk lasers, Fabry‐Perot DFB DBR lasers mode‐locked material platform discussed.
A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques compared, one comprising only inorganic materials, the other technique using an organic agent. Issues such as process and mechanism, strength, uniformity, wafer surface requirement, stress distribution are studied detail. The application to realize high-performance active passive photonic...
Silicon (Si) photonics is a disruptive technology on the fast track to revolutionise integrated photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved from science project 15 years ago growing business and compelling research field today. We focus scope of III-V compound semiconductors heterogeneously substrates. The commercial success massively produced optical transceivers based first-generation innovation discussed. Then, we review number technological...
The performance of silicon photonic components and integrated circuits has improved dramatically in recent years. As a key enabler, heterogeneous integration not only provides the optical gain which is absent from native Si substrates enables complete functionalities on chip, but also lays foundation versatile device engineering. This paper reviews progress high-performance photonics using integration, with emphasis ultra-low-loss waveguides, single-wavelength lasers, comb including phased...
Abstract Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field arrays (FPGAs). However, these are constrained by the limited tuning speed large power consumption of phase shifters used. In this paper, we introduce memresonator, metal-oxide memristor heterogeneously with microring resonator, non-volatile silicon photonic shifter. These devices capable retention times 12 hours,...
Optical interconnects have been recognized as the most promising solution to accelerate data transmission in artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge a compelling scalable means for optical modulation. However, inherent trade-off between bandwidth modulation efficiency hinders device performance. Here we demonstrate dense division modulator array on chip...
We report an electrically pumped distributed feedback silicon evanescent laser. The laser operates continuous wave with a single mode output at 1600 nm. threshold is 25 mA maximum power of 5.4 mW 10 degrees C. operating temperature and minimum line width the are 50 C, 3.6 MHz, respectively.
In this paper, we review the hybrid silicon photonic integration platform and its use for optical links. platform, a III/V layer is bonded to fully processed silicon-on-insulator wafer. By changing bandgap of quantum wells (QW), low-threshold-current lasers, high-speed modulators, photodetectors can be fabricated operating at wavelengths 1.55 μm. With QW intermixing technology, these components integrated with each other complete interconnect realized on-chip. The bonding process technology...
We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 microm) and small electrical optical losses result in lasing threshold as low 5.4 mA up to 65 degrees C operation temperature continuous-wave (cw) mode. spectrum is single mode with large extinction ratio linewidth observed. Application on-chip interconnects discussed from system perspective.
As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in cost-effective way for volume manufacturability.Currently, direct heteroepitaxial growth of III-V structures on Si using quantum dots as the active region is vibrant field research, with potential to demonstrate low-cost, high-yield, long-lifetime, high-temperature devices.Ongoing work being conducted reduce consumption, maximize...
Si photonics as an integration platform has recently been a focus of optoelectronics research because the promise low-cost manufacturing based on ubiquitous electronics fabrication infrastructure. The key challenge for photonic systems is realization compact, electrically driven optical gain elements. We review our recent developments in hybrid evanescent devices. have demonstrated pumped lasers, amplifiers, and photodetectors that can provide low-cost, scalable solution by using novel...
Silicon-germanium (Si–Ge)-based avalanche photodiodes (APDs) have shown a significant improvement in receiver sensitivity compared to their III–V counterparts due the superior impact ionization property of silicon. However, conventional Si–Ge APDs typically operate at high voltages and low speed, limiting application this technology data communication. In paper, we present waveguide photodiode using thin silicon multiplication region with breakdown voltage −10 V, speed 25 GHz,...
An ultra-short (∼10 μm long) polarization beam splitter (PBS) based on an asymmetrical bent directional coupler (DC) is demonstrated experimentally by using silicon-on-insulator nanowires. The DC designed to cross-couple TM polarized light completely while there almost no coupling for TE polarization. Grating couplers are introduced at both ends of the PBS efficient single-mode fibers. measurement results show that extinction ratios fabricated higher than 10 dB polarizations in a broad...
The device and integration technology for silicon photonic transmitters are reviewed in this paper. hybrid platform enables on-chip lasers to be fabricated with circuits can integrated the CMOS back-end flow. Laser arrays from multiple die bonding quantum well intermixing techniques demonstrated extend spectral bandwidth laser array of transmitter. Two modulator technologies, modulators modulators, also described.
Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration III/V laser chip or optical gain materials onto substrate. A number approaches, including flip-chip bonding, molecule polymer wafer monolithic epitaxy, have been extensively explored past decade. Here, we demonstrate novel photonic method epitaxial...
Heterogeneous III-V-on-silicon photonic integration has proved to be an attractive and volume manufacturable solution that marries the merits of III-V compounds silicon technology for various integrated circuit (PIC) applications. The current main-stream Ethernet trends larger bandwidth are pushing higher modulation baudrate or employing advanced format datacom However, neither is likely able significantly drive overall cost energy efficiency best sweet spot, nor unfold full potential...
We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA 11 mW, respectively. device generates open eye-diagrams under direct modulation data rates up to 4 Gb/s.
The authors report a highly efficient design for low-temperature, void-free InP-to-silicon direct wafer bonding on silicon-on-insulator (SOI) substrate. By etching an array of small through holes in the top silicon layer, generated gas by-products (H2O, H2) from polymerization reactions and thus gaseous hydrocarbon can be absorbed diffuse buried oxide resulting up to five orders magnitude interfacial void density reduction (from >50 000 ≤3 cm−2). required annealing time is reduced...
We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates.A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks.An ultra-low dark current 0.8 nA an internal responsivity 0.9 A/W were measured in O band.We also report, to best our knowledge, first characterization high-speed performance demonstration on-chip...
We demonstrate the first quantum dot (QD) laser on a silicon substrate with efficient coupling of light to waveguide under QD gain region. Continuous wave operation up 100 °C and multiwavelength are demonstrated, paving way towards highly CMOS-compatible, uncooled, WDM sources.
A low-loss add-drop microring resonator (MRR) with an ultra-large free spectral range (FSR) is demonstrated by introducing ultra-sharp multimode waveguide bend and bent asymmetrical directional couplers (ADCs). The introduced to achieve a low loss, even small radius (e.g., R = 0.8 μm). ADCs are used suppress the resonance of higher-order modes. For fabricated device, transmission at drop port has narrow 3 dB-bandwidth nm excess loss 1.8 dB. record large FSR 93 achieved best our knowledge.
A CMOS-compatible avalanche photodiode (APD) with high speed and sensitivity is a critical component of low-cost, high-data-rate, energy-efficient optical communication link. novel waveguide-coupled silicon–germanium APD detector three electric terminals was demonstrated breakdown voltage −6 V, bandwidth 18.9 GHz, DC photocurrent gain 15, open-eye diagram at data rate 35 Gb/s, −11.4 dBm 25 Gb/s. This three-terminal allows high-yield fabrication in the standard CMOS process provides robust...
Silicon-germanium (Si-Ge) avalanche photodiodes (APDs) have large gain bandwidth product (GBP) and low excess noise due to the impact ionization coefficient ratio of silicon. Optical receivers using APDs are able achieve high-speed energy efficient optical transceiver systems. We demonstrate a waveguide Si-Ge APD with breakdown voltage -10V, achieving 60 Gb/s PAM4 successfully. A compact circuit model was constructed allow photonic devices circuitry co-design. The receiver has achieved -16...