A5031606582- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Neural Networks and Reservoir Computing
- Photonic Crystals and Applications
- Quantum Information and Cryptography
- Advanced Optical Sensing Technologies
- Optical Coatings and Gratings
- Mechanical and Optical Resonators
- Quantum optics and atomic interactions
- Semiconductor Quantum Structures and Devices
- Quantum Mechanics and Applications
- Quantum Computing Algorithms and Architecture
- Advanced Fiber Optic Sensors
- Photorefractive and Nonlinear Optics
- Photonic Crystal and Fiber Optics
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Advanced Fluorescence Microscopy Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Optical Imaging Technologies
- Atomic and Subatomic Physics Research
- Nanowire Synthesis and Applications
Hewlett Packard Enterprise (United States)
2016-2025
Hewlett-Packard (United States)
2015-2024
Texas A&M University
2014
Intel (United States)
2011-2012
Massachusetts Institute of Technology
2003-2006
Northwestern University
2001-2003
Northwest University
2003
Istituto Nazionale di Fisica Nucleare, Sezione di Napoli
1997-2001
Istituto Nazionale per la Fisica della Materia
1998-1999
University of Naples Federico II
1998
We expect that many-core microprocessors will push performance per chip from the 10 gigaflop to teraflop range in coming decade. To support this increased performance, memory and inter-core bandwidths also have scale by orders of magnitude. Pin limitations, energy cost electrical signaling, non-scalability chip-length global wires are significant bandwidth impediments. Recent developments silicon nanophotonic technology potential meet these off- on-stack requirements at acceptable power...
We expect that many-core microprocessors will push performance per chip from the 10 gigaflop to teraflop range in coming decade. To support this increased performance, memory and inter-core bandwidths also have scale by orders of magnitude. Pin limitations, energy cost electrical signaling, non-scalability chip-length global wires are significant bandwidth impediments. Recent developments silicon nanophotonic technology potential meet these off- on-stack requirements at acceptable power...
We demonstrate a simple, robust, and ultrabright parametric down-conversion source of polarization-entangled photons based on polarization Sagnac interferometer. Bidirectional pumping in type-II phase-matched periodically poled $\mathrm{K}\mathrm{Ti}\mathrm{O}\mathrm{P}{\mathrm{O}}_{4}$ yields measured flux 5000 pairs/s/mW pump power $1\text{\ensuremath{-}}\mathrm{nm}$ bandwidth at 96.8% quantum-interference visibility. The common-path arrangement the interferometer eliminates need for phase...
Optical interconnects have been recognized as the most promising solution to accelerate data transmission in artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge a compelling scalable means for optical modulation. However, inherent trade-off between bandwidth modulation efficiency hinders device performance. Here we demonstrate dense division modulator array on chip...
In this letter, we present a source of quantum-correlated photon pairs based on parametric fluorescence in fiber Sagnac loop. The are generated the 1550-nm fiber-optic communication band and detected with InGaAs-InP avalanche photodiodes operating gated Geiger mode. A generation rate > 10/sup 3/ pairs/s is observed, which limited by detection electronics at present. We also demonstrate nonclassical nature correlations pairs. This source, given its spectral properties robustness, well suited...
We present a theoretical and experimental comparison of spontaneous parametric down-conversion in periodically poled waveguides bulk KTP crystals. measured waveguide pair generation rate 2.9.10(6) pairs/s per mWof pump 1-nm band: more than 50 times higher the crystal rate.
We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 microm) and small electrical optical losses result in lasing threshold as low 5.4 mA up to 65 degrees C operation temperature continuous-wave (cw) mode. spectrum is single mode with large extinction ratio linewidth observed. Application on-chip interconnects discussed from system perspective.
Dielectric high-contrast sub-wavelength grating (SWG) structures have received much attention in recent years, offering a new paradigm for the integration of optical systems. Their nanoscale resonant properties can result complex and unintuitive far-field behavior that, if carefully crafted, allows full control phase front from thin planar layer. To date, experimental demonstrations these devices only been realized with polarized light reflective mode, greatly limiting their use practical In...
Silicon-germanium (Si–Ge)-based avalanche photodiodes (APDs) have shown a significant improvement in receiver sensitivity compared to their III–V counterparts due the superior impact ionization property of silicon. However, conventional Si–Ge APDs typically operate at high voltages and low speed, limiting application this technology data communication. In paper, we present waveguide photodiode using thin silicon multiplication region with breakdown voltage −10 V, speed 25 GHz,...
Photonic interconnects are a promising technology to meet the bandwidth demands of next-generation high-performance computing systems. This paper presents silicon photonic transceiver circuits for microring resonator-based optical interconnect architecture in 1 V standard 65 nm CMOS technology. The transmitter incorporate high-swing ( 2V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> and 4V ) drivers with nonlinear pre-emphasis...
Heterogeneous III-V-on-silicon photonic integration has proved to be an attractive and volume manufacturable solution that marries the merits of III-V compounds silicon technology for various integrated circuit (PIC) applications. The current main-stream Ethernet trends larger bandwidth are pushing higher modulation baudrate or employing advanced format datacom However, neither is likely able significantly drive overall cost energy efficiency best sweet spot, nor unfold full potential...
We report what we believe to be the first experimental demonstration of nondegenerate four-wave mixing in a microstructure fiber. The effect χ3 nonlinearity is enhanced such fiber because small core area, and achieve phase matching by operating near zero-dispersion wavelength ≃750 nm. have observed parametric gains more than 13 dB 6.1-m-long with pump peak power only 6 W. compare our gain results those predicted theory explore effects Raman shift (or) amplification cascaded nonlinear mixing.
We demonstrate, for the first time to our knowledge, optical parametric oscillation based on four-wave mixing in microstructure fiber. The measured wavelength-tunability range of device (40 nm) and threshold-pump peak power (34.4 W) are good agreement with theory fibers. ellipticity fiber's polarization modes allows be implemented a relatively simple Fabry-Perot configuration. Spectral peaks that due cascaded-mixing processes easily observed setup, which may provide way extend tunability...
We demonstrate a robust implementation of deterministic linear-optical controlled-not gate for single-photon two-qubit quantum logic. A polarization Sagnac interferometer with an embedded 45 \ifmmode^\circ\else\textdegree\fi{}-oriented dove prism is used to enable the control qubit act on momentum (spatial) target same photon. The optical requires no active stabilization because two spatial modes share common path, and it entangle qubits.
We have demonstrated a high-flux source of polarization-entangled photons using type-II phase-matched periodically-poled KTP parametric downconverter in collinearly propagating configuration. observed quantum interference between the single-beam downconverted with visibility 99% and measured coincidence flux 300/s/mW pump. The Clauser-Horne-Shimony-Holt version Bell's inequality was violated value 2.711 +/- 0.017.
The need for spatial and spectral filtering in the generation of polarization entanglement is eliminated by combining two coherently-driven type-II spontaneous parametric downconverters. resulting ultrabright source emits photon pairs that are entangled over entire cone spectrum emission. We detect a flux $\sim$12 000 polarization-entangled pairs/s per mW pump power at 90% quantum-interference visibility, can be temperature tuned 5 nm around frequency degeneracy. output state actively...
Silicon nanophotonics holds the promise of revolutionizing computing by enabling parallel architectures that combine unprecedented performance and ease use with affordable power consumption. Here we describe results a detailed multiyear design study dense wavelength division multiplexing (DWDM) on-chip off-chip interconnects device technologies could improve factor 20 above industry projections over next decade.
Silicon photonics devices offer promising solution to meet the growing bandwidth demands of next-generation interconnects. This paper presents a 5 × 25 Gb/s carrier-depletion microring-based wavelength-division multiplexing (WDM) transmitter in 65 nm CMOS. An AC-coupled differential driver is proposed realize 4 VDD output swing as well tunable DC-biasing. The incorporates 2-tap asymmetric pre-emphasis effectively cancel optical nonlinearity ring modulator. average-power-based dynamic...
We demonstrate the first quantum dot (QD) laser on a silicon substrate with efficient coupling of light to waveguide under QD gain region. Continuous wave operation up 100 °C and multiwavelength are demonstrated, paving way towards highly CMOS-compatible, uncooled, WDM sources.
A CMOS-compatible avalanche photodiode (APD) with high speed and sensitivity is a critical component of low-cost, high-data-rate, energy-efficient optical communication link. novel waveguide-coupled silicon–germanium APD detector three electric terminals was demonstrated breakdown voltage −6 V, bandwidth 18.9 GHz, DC photocurrent gain 15, open-eye diagram at data rate 35 Gb/s, −11.4 dBm 25 Gb/s. This three-terminal allows high-yield fabrication in the standard CMOS process provides robust...
Silicon-germanium (Si-Ge) avalanche photodiodes (APDs) have large gain bandwidth product (GBP) and low excess noise due to the impact ionization coefficient ratio of silicon. Optical receivers using APDs are able achieve high-speed energy efficient optical transceiver systems. We demonstrate a waveguide Si-Ge APD with breakdown voltage -10V, achieving 60 Gb/s PAM4 successfully. A compact circuit model was constructed allow photonic devices circuitry co-design. The receiver has achieved -16...