We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide fabricated from the as-grown material achieve room temperature continuous wave thresholds as low 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of active region improves T0 range 100–200 K while maintaining high powers. Device yield is presented showing repeatable across different dies wafers.

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that growth introduces high densities crystalline defects limit device performance lifetime. Quantum dot lasers, amplifiers, modulators, photodetectors epitaxially grown are showing promise for achieving low-cost, scalable with silicon photonics. unique electrical confinement properties quantum dots provide reduced sensitivity...

We observe the unconventional photon blockade effect in quantum dot cavity QED, which, contrast to conventional blockade, operates weak coupling regime. A single transition is simultaneously coupled two orthogonally polarized optical modes, and by careful tuning of input output state polarization, observed. find a minimum second-order correlation $g^{(2)}(0)\approx0.37$ which corresponds $g^{(2)}(0)\approx0.005$ when corrected for detector jitter, expected polarization dependency bunching...

Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic photonic integrated circuits (EPICs) which can fulfill the rapidly increasing bandwidth lower energy per bit requirements. We present here, for first time, a low noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on complementary metal-oxide-semiconductor compatible on-axis (001) substrate. The...

Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium niobate, but each has fundamental limitations that restrict the photon-pair brightness quality, weak optical nonlinearity or high waveguide loss. Here, we demonstrate a novel, ultra-low-loss AlGaAs-on-insulator platform capable generating time-energy photons in...

We review recent advances in the field of quantum dot lasers on silicon. A summary device performance, reliability, and comparison with similar well grown silicon will be presented. consider possibility scalable, low size, weight, power nanolasers enabled by active regions for future short-reach photonics interconnects.

As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in cost-effective way for volume manufacturability.Currently, direct heteroepitaxial growth of III-V structures on Si using quantum dots as the active region is vibrant field research, with potential to demonstrate low-cost, high-yield, long-lifetime, high-temperature devices.Ongoing work being conducted reduce consumption, maximize...

We investigate the impact of threading dislocation density on reliability 1.3 μm InAs quantum dot lasers epitaxially grown Si. A reduction in from 2.8 × 108 cm−2 to 7.3 106 has improved laser lifetime by about five orders magnitude when aged continuous-wave near room temperature (35 °C). have achieved extrapolated lifetimes (time double initial threshold) more than 10 h. An accelerated aging test at an elevated (60 °C) reveals that p-modulation doped Si retain superior over unintentionally...

We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as active region and an intermediate GaP buffer between device layers. Broad-area with uncoated facets achieve room-temperature lasing threshold current densities around 860 A/cm2 110 mW of single-facet output power for same device. Ridge designed low operations show maximum...

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm−2 from an optimized GaAs template GaP/Si. The high-quality templates enable as-cleaved to achieve room-temperature continuous-wave (CW) current 9.5 mA, as 132 A/cm2, single-side output power 175 mW, and wall-plug-efficiency 38.4% at room...

Quantum dot lasers epitaxially grown on Si are promising for an efficient light source silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm quantum from off-cut on-axis (001) substrates. Here, we report significantly improved performance and reliability of enabled by a low threading dislocation density GaAs buffer layer. Continuous-wave threshold currents as 6.2 mA output powers 185 mW have achieved at 20 °C. Reliability tests after 1500 h 35 °C showed...

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot grown patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. achieve continuous wave lasing thresholds as low 36 mA operation up to 80°C.

This letter reports on a 1.3-μm reflection insensitive transmission with quantum dot laser directly grown silicon in the presence of strong optical feedback. These results show penalty-free at 10 GHz under external modulation -7.4-dB The feedback insensitivity from low linewidth enhancement factor, high damping, absence off-resonance emission states, and shorter carrier lifetime. paves way for future chip high-speed integrated circuits operating without isolators.

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear nonlinear devices, passive active associated applications. For photonics low propagation loss essential, particularly in However, achieving low-loss high-confinement photonic circuits poses...

We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates.A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks.An ultra-low dark current 0.8 nA an internal responsivity 0.9 A/W were measured in O band.We also report, to best our knowledge, first characterization high-speed performance demonstration on-chip...

This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown silicon. Owing to low density threading dislocations and resultant high gain, an αH value 0.13 that is rather independent temperature range (288 K–308 K) measured. Above laser threshold, does not increase extensively with bias current which very promising for realization future integrated circuits including performance sources.

Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static dynamic properties of microring quantum dot grown directly on exact (001) GaP/Si. Effectively, single-mode operation was observed at 1.3 μm with modes spectrally distant locations. High temperature stability T0∼103  K has been achieved low threshold 3 mA for microrings outer ring...

With recent developments in high‐speed and high‐power electronics Si‐based photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods is gaining momentum. However, performance reliability epitaxially grown devices are still limited by defects semiconductor material, especially threading dislocation density (TDD). Herein, a novel “asymmetric step‐graded filter” structure molecular beam epitaxy (MBE) proposed based on systematic study commonly used...

Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, they increasingly demanded long-haul, metropolitan, access networks. The capability to produce such directly on silicon (Si) could boost the use of Si photonics facilitate adoption optical data transmission even at chip scale. Moreover, just as a cheap large-diameter substrate device production is very...

This work reports on a systematic investigation of the influence optical feedback in InAs/GaAs quantum dot lasers epitaxially grown silicon. The boundaries associated to onset critical level corresponding first Hopf bifurcation are extracted at different bias conditions with respect excited state transition. Overall, results show that directly onto silicon much more resistant than well lasers, mostly resulting from small linewidth enhancement factor high-quality material. However, also...

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report first O-band InAs quantum dot (QD) waveguide APDs monolithically grown with a low dark current of 0.1 nA unit gain and responsivity 0.234 A/W 1.310 μm (−5 V). linear mode, have maximum 198 show clear eye diagram up to 8 Gbit/s. These QD-based enjoy benefit sharing same epitaxial layers processing flow as QD lasers, which could...

Abstract Distributed feedback (DFB) lasers represent a central focus for wavelength‐division‐multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot (QD) DFB grown on complementary metal‐oxide‐semiconductor (CMOS)‐compatible (001) Si substrate are reported. Temperature‐stable, single‐longitudinal‐mode operation is achieved with side‐mode suppression ratio of more than 50 dB and threshold current density 440 A cm −2 . single‐lane rate 128 Gbit s −1 net...

Abstract Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, metrology. One of the biggest challenges in scaling PICs comes from parasitic reflections that feed light back into laser source. These increase noise may cause destabilization. To avoid reflections, expensive bulky isolators been placed between rest PIC leading to large increases device footprint on-chip integration schemes...