We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide fabricated from the as-grown material achieve room temperature continuous wave thresholds as low 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of active region improves T0 range 100–200 K while maintaining high powers. Device yield is presented showing repeatable across different dies wafers.

Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). This represents an order-of-magnitude increase in the over previously reported lifetimes InAs/Ga1−xInxSb T2SLs. The considerably longer is attributed to reduction non-radiative recombination centers with removal Ga from structure. improvement may enable background limited T2SL...

In this letter, we experimentally demonstrate enhancement in drive current <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> and reduction drain-induced barrier thinning (DIBT) arsenide-antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneling height Eb xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> from 0.58 to...

Recent improvements in the fabrication technology of InGaAs/InP heterobipolar transistors have enabled highly scaled with power gain bandwidths above 1 THz. Limitations conventional process that reduce RF bandwidth been identified and mitigated, among which are high resistivity base ohmic contacts, resistive electrodes, excessive emitter end undercut, insufficient undercut large-diameter posts. A novel two-step deposition for self-aligned metallization sub-20-nm bases has developed...

High peak power, room-temperature operation in the long wave infrared spectral region is reported for double-channel, ridge waveguide quantum cascade lasers (QCLs) monolithically integrated onto a silicon substrate. The 55-stage laser structure with an AlInAs/InGaAs core and InP cladding was grown by molecular beam epitaxy directly 8-in. diameter germanium-coated substrate template via III–V alloy metamorphic buffer. Atomic force microscope imaging demonstrated good quality surface full QCL...

We report on the development of InAs/InGaAlAs quantum-dash-in-well structure InP substrate for wideband emitter applications. A spectral width as broad 58 meV observed from both photoluminescence and surface photovoltage spectroscopy sample indicating formation highly inhomogeneous InAs-dash that results quasi-continuous interband transition. The two-section superluminescent diodes (SLDs), with integrated photon absorber slab lasing suppression section, fabricated InAs dash-in-well exhibits...

We demonstrate an InAsSb nBn detector monolithically integrated with a microlens fabricated on the back side of detector. The increase in optical collection area resulted five-fold enhancement responsivity to Rp = 5.5 A/W. increases further 8.5 A/W antireflection coating. These 4.5 μm cut-off wavelength coated detectors microlenses exhibited detectivity D* (λ) 2.7 × 1010 cmHz0.5/W at T 250 K, which can be reached easily single-stage thermoelectric cooler or passive radiator space...

Mid-wavelength infrared nBn photodetectors based on bulk InAsxSb1-x absorbers with a greater than 5 μm cutoff grown GaSb substrates are demonstrated. The extended was achieved by increasing the lattice constant of substrate from 6.09 to 6.13 Å using 1.5 thick AlSb buffer layer enable growth InAs0.81Sb0.19 absorber material. Transitioning also enables use simple binary as unipolar barrier block majority carrier electrons and reduce dark current noise. Individual test devices 4 displayed 150 K...

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a simple mesa structure. The devices employ 30 nm highly doped InGaAs base and 150 InP collector containing an InGaAs/InAlAs superlattice grade. These exhibit maximum f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 755 GHz with 416 /f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> . This is the highest reported for HBT. Through use of...

The authors report on the growth of InAs/GaAs quantum dots lasers silicon emitting in 1.3 μm wavelength regime with p-doped active regions. A optimization procedure guided by a combination high and low excitation photoluminescence is presented for InAs dot growth. Growth conditions derived from this are used to produce optical quality embedded GaAs/AlxGa1−xAs graded index separate confinement heterostructure waveguide. Ridge waveguide fabricated as-grown material achieve room temperature...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD) via dielectric cap annealing, and impurity-induced (IID) using nitrogen ion-implantation techniques have been employed to spatially control group-III quantum-dash (Qdash) system. Differential bandgap shifts of up 80 nm 112 observed from IFVD...

We present our recent studies on a set of three different type-II InAs/GaSb superlattice interband cascade infrared (IR) photodetectors. Electroluminescence and x-ray diffraction measurements suggest that all the grown structures had comparable material qualities. Two these detectors were two- three-stage with regular-illumination configurations other was two-stage structure reverse-illumination configuration. The 100% cutoff wavelength for 6.2 μm at 78 K, extending to 8 300 K. At T=125 K...

Strong coupling effects and polariton lasing are observed at 155 K with an edge-emitting GaAs-based microcavity diode a single Al0.31Ga0.69As/Al0.41Ga0.59As quantum well as the emitter. The threshold for is 90 A/cm2, accompanied by reduction of emission linewidth to 0.85 meV blueshift wavelength 0.89 meV. Polariton confirmed observation population redistribution in momentum space spatial coherence. Conventional photon recorded same device higher pump powers.

GaSb-based, 6.1 Å lattice-constant, infrared photodetector materials were grown on large diameter, 6-in. GaAs substrates by molecular beam epitaxy. Multiple metamorphic buffer architectures, including bulk GaSb nucleation, AlAsSb superlattices, and graded GaAsSb ternary alloys, investigated to bridge the 7.8% mismatch gap between GaSb-based epitaxial layers. Unique surface morphologies crystal structure properties, as revealed atomic force microscopy cross-section transmission electron...

Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs substrate with metamorphic buffer are reported. The had Al0.78In0.22As/In0.73Ga0.27As strain-balanced active region composition and 8 μm-thick, all-InP waveguide. High reflection coated 3 mm × 30 μm devices processed from the wafer into ridge-waveguide configuration lateral current injection scheme delivered over 200 mW of total peak power at 78 K lasing observed up to 170 K. No signs...

Type I InP/InGaAs/InP double heterojunction bipolar transistors were fabricated using a simple mesa structure, where emitter junction widths have been scaled from 250 nm to 200 nm. These devices exhibit <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> in excess of 800 GHz, and xmlns:xlink="http://www.w3.org/1999/xlink">tau</sub> = 360 GHz. Greater than fifty percent device yield was...

InAs/InAs_1-xSb_x strain-balanced superlattices (SLs) on GaSb are a viable alternative to the well-studied InAs/Ga_1-xIn_xSb SLs for mid- and long-wavelength infrared (MWIR LWIR) laser photodetector applications, but not as thoroughly investigated. Therefore, valence band offset between InAs InAs/InAs_1-xSb_x, critical parameter necessary predict SL bandgap, must be further examined produce devices operational at MWIR LWIR...

In this work, we report the demonstration of quaternary GaInAsSb-based mid-wavelength infrared photodetectors with cutoff wavelengths longer than 4 μm at 300 K. Both interband cascade photodetector (ICIP) a three-stage discrete absorber architecture and conventional one-stage detector structures have been grown by molecular beam epitaxy investigated in experiments for their electrical optical properties. High absorption coefficient gain were observed both structures. The ICIPs had superior...

GaSb-based infrared (IR) photodetector structures were grown on large diameter, 150 mm, Si substrates using a multistep metamorphic buffer architecture process. A standard bulk InAsSb/AlAsSb barrier detector design with cutoff wavelength of ∼4 μm was used as test vehicle for this growth First, Ge layer deposited by chemical vapor deposition, creating Ge-Si substrate the subsequent molecular beam epitaxy remaining III–V and device layers. X-ray diffraction photoluminescence measurements...

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triple-mesa structure, exhibiting simultaneous 404 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">τ</sub> and 901 xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> . The emitter base contacts were defined by electron beam lithography with better than 10 nm resolution smaller 20 alignment error. base-collector junction has been passivated depositing SiN...

The Sb concentration profile in an nBn photodetector containing InAs/InAsSb type-II superlattice is collected and analyzed using atom probe tomography. A 3D reconstruction comprises the full composition of 31 periods. evaluated for entire period stack, as well each individual segregation models from Muraki Wood. Trends asymmetric show a consistent non-negligible InAs layers lower InAsSb with respect to target concentration.

Antimony-based photodetector materials have attracted considerable interest for their potential and demonstrated performance in infrared detection imaging applications. Mid-wavelength detector has been using bulk InAsSb/AlAsSb-based nBn structures. Heterostructures based on InAs/Ga(In)Sb strained layer superlattices create a type-II band alignment that can be tailored to cover wide range of the mid- long-wavelength absorption bands by varying thickness composition constituent materials....

GaSb and its heterostructures grown by molecular beam epitaxy (MBE) have received much attention given their application in a wide range of mid-wave long-wave IR photodetector applications. With the maturation MBE growth process, focus is now turned to improving manufacturing readiness transition production large-format wafers. We will discuss from development early detector layer structures on 2" diameter substrates, through today's 3"/4" standard, onset 5" pilot perspective volume compound...

The GaSb-based 6.1 Å lattice constant family of materials and heterostructures provides rich bandgap engineering possibilities have received considerable attention for their potential demonstrated performance in infrared (IR) detection imaging applications. Mid-wave long-wave IR photodetectors are progressing toward commercial manufacturing To succeed, they must move from research laboratory settings to general semiconductor production, high-quality epitaxial wafers with diameter larger than...