A5101921180- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Acoustic Wave Resonator Technologies
- Advanced MEMS and NEMS Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Microfluidic and Bio-sensing Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Microwave and Dielectric Measurement Techniques
- Quantum and electron transport phenomena
- Mechanical and Optical Resonators
- Photonic and Optical Devices
- Silicon Carbide Semiconductor Technologies
- Near-Field Optical Microscopy
- Microwave Engineering and Waveguides
- Electrostatic Discharge in Electronics
- Ga2O3 and related materials
- 2D Materials and Applications
- Semiconductor materials and interfaces
- Microbial Inactivation Methods
- Surface and Thin Film Phenomena
- Advanced Semiconductor Detectors and Materials
- 3D IC and TSV technologies
Cornell University
1977-2025
Changwon National University
2024
Baylor College of Medicine
2024
UCSF Helen Diller Family Comprehensive Cancer Center
2023
Korea Economic Research Institute
2023
National Taiwan University
2022
National Yang Ming Chiao Tung University
2022
Lehigh University
2012-2021
Marche Polytechnic University
2021
Ithaca College
2021
The rise of two-dimensional (2D) materials research took place following the isolation graphene in 2004. These new 2D include transition metal dichalcogenides, mono-elemental sheets, and several carbide- nitride-based materials. number publications related to these emerging has been drastically increasing over last five years. Thus, through this comprehensive review, we aim discuss most recent groundbreaking discoveries as well opportunities remaining challenges. This review starts out by...
We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to conventional (HEMT) of similar design, MOS-HEMT exhibits several orders magnitude lower leakage and times higher breakdown voltage channel current. This implies that ALD Al2O3∕AlGaN interface is high quality Al2O3∕AlGaN∕GaN potential for high-power rf applications. In addition, high-quality dielectric allows effective...
Magnetotransport of two-dimensional electrons and holes was studied in magnetic fields up to 300 kG temperatures down 0.5 K. In addition previously reported structures at Landau-level filling factors $\ensuremath{\nu}=\frac{1}{3} \mathrm{and} \frac{2}{3}$, new were resolved $\ensuremath{\nu}=\frac{4}{3}, \frac{5}{3}, \frac{2}{5}, \frac{3}{5}, \frac{4}{5}, \frac{2}{7}$. The results suggest that fractional quantization the Hall effect exists multiple series, each based on inverse an odd integer.
The polarization of small, disc-shaped regions two-dimensional electron gas exhibit a well-defined collective resonance. resonance and its behavior in magnetic field are accurately described by electrons harmonic potential.
Previous functional studies have demonstrated that muscle intracellular pH regulation is mediated by sodium-coupled bicarbonate transport, Na+/H+ exchange, and Cl−/bicarbonate exchange. We report the cloning, sequence analysis, tissue distribution, genomic organization, analysis of a new member sodium cotransporter (NBC) family, NBC3, from human skeletal muscle. mNBC3 encodes 1214-residue polypeptide with 12 putative membrane-spanning domains. The ∼ 7.8-kilobase transcript expressed uniquely...
Anti-level-crossing of Landau and the electric subband levels is observed in high-mobility two-dimensional electron gas at GaAs/(GaAl)As interface. Coupling between motion parallel perpendicular to interface due a small component magnetic field. This novel spectroscopic technique determines transition energy this system.
This work demonstrates the high-frequency and high-power performance capacity of GaN high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{++}$ </tex-math></inline-formula> -GaN source/drain contacts, InAlN/GaN HEMT with gate length 55 nm source-drain spacing 175 shows maximum drain current notation="LaTeX">${I}_{{D,MAX}}$ 2.8 A/mm...
Abstract Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G beyond) industries. This also comes which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose shift to aluminum (AlN) platform. AlN allows smarter, highly-scaled heterostructure design that will improve output power thermal management III-nitride amplifiers. Beyond improvements over incumbent...
Advances and updates in medical applications utilizing microwave techniques technologies are reviewed this paper. The article aims to provide an overview of enablers for their recent progress. emphasis focuses on the microwaves, following order, 1) signal data communication implants wearables through human body, 2) electromagnetic energy transfer tissues, 3) noninvasive, remote or <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in situ</i>...
Epitaxial AlN thin-film bulk acoustic resonators (FBARs) on SiC substrates with first-order thickness extensional modes of 15-17 GHz are demonstrated. For the 15 epi-AlN FBARs, quality factor <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q}_{\textit {ma}{x}}\approx {443}$ </tex-math></inline-formula> , electromechanical coupling coefficient notation="LaTeX">${k}_{\textit {ef}{f}}^{{2}}\approx {2}.{3}\%$...
A negative magnetoresistance proportional to ${B}^{2}$ is found in the two-dimensional electron gas of GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterostructures. It explained by conductivity correction due interaction effect disordered systems. The high-field lifetime, estimated both from and Shubnikov-de Haas oscillations, much shorter than zero-field demonstrating predominance long-range potential fluctuations high-mobility samples.
It is well known that recombination lifetimes are significantly degraded in oxygen-precipitated silicon. The possible sources for lifetime degradation expected to be oxygen precipitates (OP’s), dislocation loops, stacking faults, and point defects associated with self-interstitials generated during the precipitation process. From results of an extensive experimental study using IR absorption, TEM, DLTS, SPV (surface photovoltage), we have found OP’s mainly responsible observed at takes place...
We report results on the fractional quantum Hall effect in GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterostructures at Landau-level filling factor $\ensuremath{\nu}=\frac{p}{q}$ obtained with combination of a dilution refrigerator and National Magnet Laboratory hybrid magnet. establish conclusively quantiztation higher-order states $p$ series $q$. The resistance is accurately quantized to 2.3 parts ${10}^{4}$ for $\frac{2}{5}$ state 1.3 ${10}^{3}$ $\frac{3}{5}$...
We report the experimental demonstration of deep-submicrometer inversion-mode In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.75</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.25</sub> As MOSFETs with ALD high- <i xmlns:xlink="http://www.w3.org/1999/xlink">k</i> Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as gate dielectric. this letter, n-channel 100-200-nm-long gates...
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation Ti/Au top gate. As fabricated, the was stable in atmosphere for at least 100 h. With annealing 200{\deg}C dry nitrogen 1 h, its drain current increased by an order magnitude to approximately mA/mm, which could be attributed reduction trapped charge and/or Schottky barrier source contacts. Thereafter, between -50{\deg}C 150{\deg}C up 1000 These promising...
To resolve the dilemma of cell clogging or solution parasitics encountered by Coulter counters and to evolve a general-purpose electrical detection technique, we used broadband microwave measurements overcome electrode polarization, ac dielectrophoresis precisely place cells between narrowly spaced electrodes, relatively wide microfluidic channels prevent clogging. This unique combination approaches resulted in reproducible sensing single Jurkat HEK cells, both live dead, different cultures at times.
The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Results are highlighted by record high on-current 3.6 A/mm, maximum oscillation frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) 233...
The vertebral column or spine assembles around the notochord rod which contains a core made of large vacuolated cells. Each cell possesses single fluid-filled vacuole, and loss fragmentation these vacuoles in zebrafish leads to kinking. Here, we identified mutation kinase gene dstyk that causes severe congenital scoliosis-like phenotype zebrafish. Live imaging revealed Dstyk regulates fusion membranes with vacuole. We find localized disruption malformation curving axis at those sites....
For the first time, charging and discharging of traps in dielectric state-of-the-art RF MEMS capacitive switches were characterized detail. Densities time constants different trap species extracted under control voltages. It was found that, while are relatively independent voltage, steady-state charge densities increase exponentially with voltage. A simple model constructed to predict amount injected into corresponding shift actuation Good agreement obtained between prediction experimental data.
At low temperature and in a narrow magnetic filed range an abrupt unexpected splitting or broadening of the cyclotron absorption line two-dimensional electron gas at GaAs/(GaAl) As interface is observed. This phenomenon shown to be universal characteristic systems which not keyed Landau-level filling. The possibility that softening magnetoplasmon mode may responsible for this behavior explored.
High-purity, lightly Si-doped (μ77∼70 000–126 000 cm2/V s and n77∼2–8×1014 cm−3) molecular beam epitaxy (MBE) GaAs layers have been characterized using variable-temperature Hall effect C-V measurements, photothermal ionization spectroscopy, low-temperature photoluminescence (PL), deep level transient spectroscopy (DLTS). The spectroscopic measurements of the residual donors acceptors indicate that pronounced increase in carrier concentration which is observed with increasing As flux (for a...
An analysis of the measurement grain-boundary diffusion at low temperatures by surface-accumulation mehod was carried out. In this method atoms are allowed to diffuse along grain boundaries from a source free surface where they spread out, accumulate, and measured. The is out so that only boundary ’’short-circuit paths’’ active, lattice frozen This generally more sensitive than depth profiling for measuring temperatures. However, kinetics accumulation strongly dependent on nature sink....