The high-frequency operation of a mid-infrared interband cascade system that consists type-I laser and an uncooled infrared photodetector (ICIP) is demonstrated at room temperature. 3-dB bandwidth this under direct frequency modulation was ∼850 MHz. A circuit model developed to analyze the characteristics. extracted for ICIP ∼1.3 GHz, signifying great potential structures high-speed applications. normalized Johnson-noise-limited detectivity these ICIPs exceeded 109 cm Hz1/2/W 300 K. These...

Convolutional Neural Networks (CNN) is already known as strong tools in various fields particularly image processing and computer vision.This paper aims to exploit the power of CNN for transform learning utilizes it an unsupervised feature extractor analyzing defects a steel specimen with float batten holes Carbon Fiber Reinforced Plastic (CFRP) composite materials.A pre-trained (ImageNet-VGG-f) has been used extraction vectorized features along spectral angler mapper (SAM) provide score...

High temperature operation (250–340 K) of short-wavelength interband cascade infrared photodetectors (ICIPs) with InAs/GaSb/Al0.2In0.8Sb/GaSb superlattice absorbers has been demonstrated a 50% cutoff wavelength 2.9 μm at 300 K. Two ICIP structures, one two and the other three stages, were designed grown to explore this multiple-stage architecture. At λ = 2.1 μm, two- three-stage ICIPs had Johnson-noise-limited detectivities 5.1 × 109 5.8 cm Hz1/2/W, respectively, The better device...

In order to achieve improved understanding and gain insights into the device operation of interband cascade infrared photodetectors (ICIPs) ultimately optimize design, we present a comparative study five long-wavelength (LW) ICIPs based on type-II InAs/GaSb superlattice. This shows how responsivity is affected by individual absorber thicknesses number stages, through impact light attenuation. Additionally, this further validates that electrical universally exists in non-current-matched...

We report on a comparison study of long wavelength infrared interband cascade photodetectors (ICIPs) with the goal an improved understanding that will lead to further increases in operation temperature. studied four sets detectors including single absorber barrier and multi-stage ICIPs four, six, eight discrete absorbers. The 90% cutoff these was between 7.5 11.5 μm from 78 340 K. Multiple stage were able operate monotonically increasing bias-independent responsivity up 280 K, while...

We report on the characterization of narrow-bandgap (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> ≈ 0.4 eV, at 300 K) interband cascade thermophotovoltaic (TPV) devices with InAs/GaSb/AlSb type-II superlattice absorbers. Two device structures different numbers stages (two and three) were designed grown to study influence number absorber thicknesses performance high temperatures (300-340 K). Maximum power efficiencies 9.6% 6.5%...

We report on a comparison study of the electrical and optical properties set device structures with different numbers cascade stages, type-II superlattice (T2SL) absorber thickness, doping variations, as well noncurrent-matched interband infrared photodetectors (ICIP) structure equal absorbers. Multistage ICIPs were demonstrated to be capable operating at high temperatures zero-bias superior carrier transport over comparable conventional one-stage detectors. Based temperature dependence bias...

We report on a comparative study of two sets different long-wavelength (LW) interband cascade infrared photodetectors (ICIPs) based type-II InAs/GaSb superlattice. The devices in one set have current-matched configuration while those the other are non-current-matched. It is shown that carrier transport these LW ICIPs at high temperatures diffusion limited and length estimated to be longer than or comparable 0.5 μm various temperatures. By comparing devices, we demonstrate necessity...

We present our recent studies on a set of three different type-II InAs/GaSb superlattice interband cascade infrared (IR) photodetectors. Electroluminescence and x-ray diffraction measurements suggest that all the grown structures had comparable material qualities. Two these detectors were two- three-stage with regular-illumination configurations other was two-stage structure reverse-illumination configuration. The 100% cutoff wavelength for 6.2 μm at 78 K, extending to 8 300 K. At T=125 K...

We report on a comparative study of narrow-bandgap (∼0.2 eV at 300 K) thermophotovoltaic (TPV) devices with InAs/GaSb type-II superlattice absorbers. By comparing the characteristics three narrow bandgap TPV structures single absorber or multiple discrete absorbers, it is clearly demonstrated that device performance conventional single-absorber cell limited mainly by small collection efficiency associated relatively short diffusion length (1.5 μm K). Furthermore, this revealed multi-stage...

The interfaces of InAs/GaSb superlattices (SLs) were studied with the goal improving interband cascade infrared photodetectors (ICIPs) designed for long-wavelength region. Two ICIP structures different SL grown by molecular beam epitaxy, one a ∼1.2 monolayer (ML) InSb layer inserted intentionally only at GaSb-on-InAs and another ∼0.6 ML both InAs-on-GaSb interfaces. material quality was similar according to characterization differential interference contrast microscopy, atomic force x-ray...

A simple and effective electrical method is developed to extract the thermal generation rate minority carrier lifetime in type-II (T2) InAs/GaSb/Al(In)Sb superlattices (SLs) by taking advantage of features interband cascade infrared photodetectors (ICIPs). This more generally applicable, considers parasitic shunt series resistances found practical devices, can account for various transport mechanisms including Auger Shockley-Read-Hall processes. The investigated ICIPs have cutoff wavelengths...

We report on an investigation of multiple negative differential conductance (NDC) features in long wavelength interband cascade infrared photodetectors (ICIPs) at and above 300 K. Using ICIPs with various structures carrier concentrations, we employ several approaches to demonstrate that the observed NDC their unusual temperature dependence are related sequential turn off resonant tunneling minority carriers through electron barriers high temperatures.

In this work, we report the demonstration of quaternary GaInAsSb-based mid-wavelength infrared photodetectors with cutoff wavelengths longer than 4 μm at 300 K. Both interband cascade photodetector (ICIP) a three-stage discrete absorber architecture and conventional one-stage detector structures have been grown by molecular beam epitaxy investigated in experiments for their electrical optical properties. High absorption coefficient gain were observed both structures. The ICIPs had superior...

We present a study of the temperature-dependence performance metrics set five GaSb-based MWIR interband cascade infrared photodetectors employing InAs/GaSb superlattice absorbers. The cutoff wavelengths detectors varied from 4.3 &mu;m at 78 K to 5.1 300 K. In this study, number stages and absorber thicknesses were between samples. Two samples single-stage devices with long (&gt; 1.0 &mu;m) absorbers, while other three multiple-stage short (&lt; designed so that incoming signal was traveling...

Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV employ discrete absorbers that connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between stages similar to IC lasers. The architecture is beneficial improving the collection efficiency and spectral splitting utilizing with different bandgaps. As such, photo-voltages from...

High temperature operation of long wavelength interband cascade infrared photodetectors (ICIPs) has been demonstrated with a working above 300 K. We conducted comparison study three sets ICIP structures, which comprise single absorber barrier detectors and multi-stage ICIPs four, six eight discrete absorbers. The 90% cutoff these was between 7.5 11.5 &mu;m from 78 to 340 Advantages the over one-stage devices are in terms lower dark current density, higher detectivity (D*) operating...

We investigate high-temperature and high-frequency operation of interband cascade infrared photodetectors (ICIPs)-two critical properties. Short-wavelength ICIPs with a cutoff wavelength 2.9 μm had Johnson-noise limited detectivity 5.8×10⁹ cmHz^1/2/W at 300 K, comparable to the commercial Hg_1-xCd_xTe similar wavelengths. A simple but effective method estimate minority carrier diffusion length in short-wavelength is introduced. Using this approach,...

Interband cascade IR photodetectors (ICIPs) are multi-stage detectors with discrete absorbers separated by unipolar electron and hole barriers. In this detector architecture, the absorber in each stage is designed a thickness that thinner than carrier diffusion length so photo-generated carriers can be collected efficiently quickly. This advantage has been validated operation of ICIPs at high temperatures (>400 K) frequencies (up to 1.3 GHz). Recently, electrical gain exceeding unity was...

We present recent studies on a set of three different long wave IR interband cascade infrared photodetectors with Type-II InAs/GaSb absorbers. Two these detectors were two- and three-stage structures regular-illumination configuration the other was two-stage structure reverse-illumination configuration. The 100% cutoff wavelength for 6.2 μm at 78 K extended to 8 300 K. At T=125 higher temperatures we able observe benefits detector over device in terms lower dark current detectivity....

We report on the room-temperature operation of a high-speed mid-infrared optical system (f3-dB ≈ 0.5 GHz). This consists an efficient interband cascade laser and uncooled high-performance infrared photodetector.

Type-II (T2) InAs/GaSb superlattices (SLs) are important mid-infrared (IR) materials for photodetector applications. Carrier lifetime is a key indicator about the material quality and often collective reflection of various physical mechanisms related to device performance. In this work, simple effective electrical method used extract carrier in T2SLs by taking advantage features interband cascade IR photodetectors (ICIPs) [1,2]. This can include different transport under large reverse bias...