Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize mainstream computing architecture. However, conventional switching mechanisms such devices fundamentally hindered by spin polarized currents4, either transfer torque or orbit with precession time limitation and excessive power dissipation. These physical constraints significantly stimulate advancement modern...

In recent years, the acceleration of urbanization in Yangtze River Economic Belt (YREB) has brought about problems such as soil erosion, ecosystem degradation and decline ecological service functions. Therefore, this paper selects Fujiang Basin (FRB) Upper (UYR), analyzes relationship between runoff erosion power (REP) sediment transport (ST) on basis analyzing variation characteristics hydrological elements. Based SWAT model, a variety scenarios are set up to quantitatively analyze impact...

This paper provides a key solution for integrating spintronic memories with photonic integrated circuits, all-optical switching and reading of nanoscale magnetic bits. Problems associated nonlinear absorption the intrinsically weak magneto-optical effect are solved by hybrid scheme, exploiting plasmonic resonators. Thus authors have developed device concept that paves way toward ultrafast, energy-efficient advanced on-chip applications.

Abstract Spin‐orbitronics and single pulse all‐optical switching (AOS) of magnetization are two major successes the rapidly advancing field nanomagnetism in recent years, with high potential for enabling novel, fast, energy‐efficient memory logic platforms. Fast current‐induced domain wall motion (CIDWM) shot AOS have been individually demonstrated different ferrimagnetic alloys. However, stringent requirement their composition control makes these alloys challenging materials wafer scale...

Perpendicular synthetic antiferromagnets (p-SAFs) are of interest for the next generation ultrafast, high-density spintronic memory and logic devices. However, to efficiently operate their magnetic order by current-induced spin-orbit torques (SOTs), an unfavored high external field is conventionally required break symmetry. Here, we report field-free SOT switching a p-SAF through introduction interlayer with Dzyaloshinskii-Moriya interactions (DMIs). We experimentally observe existence DMI...

In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular anisotropy in racetrack on top photonic waveguide the indium phosphide membrane silicon platform. The is constructed by coupling doublet V-shaped gold plasmonic nanoantennas waveguide. By taking advantage localized surface plasmons, our can enable detection magnetization state beyond diffraction limit light and enhance polar magneto-optical Kerr...

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest process. On other hand, He ion irradiation has become promising tool for interface engineering spintronic material platforms, giving rise to significant modification magnetic properties. In this paper, we explore use enhance AOS bilayer-based ferrimagnets. The intermixing constituent layers was both numerically simulated and experimentally verified. We...

A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on pico-second time scale. Devices based this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, large portion light energy lost by reflection from metal thin film as well transmission substrate. In paper, we explore use dielectric coatings increase absorption layer principle constructive interference. We experimentally show that...

Magnetic racetrack memory has significantly evolved and developed since its first experimental verification is considered one of the most promising candidates for future high-density on-chip solid-state memory. However, both lack a fast precise magnetic domain wall (DW) shifting mechanism required extremely high DW motion (DWM) driving current make difficult to commercialize. Here, we propose method coherent DWM that free from above issues, which driven by chirality switching (CS) an...

In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers an attempt to establish AOS synthetic ferrimagnets with high perpendicular magnetic anisotropy. particular, study the effect of varying Tb thicknesses disentangle role two rare-earth elements. Even though compensation has been considered be crucial, find that threshold fluence for is largely independent content. Moreover, identify timescale magnetization cross zero approximately within first ps...

We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions, which perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities indium phosphide platform. This enables the magnetization state by locally increasing power absorption light at resonance cavity. design add/drop network to grant random access multiple via a...

Synthetic ferrimagnets based on Co and Gd bear promise for directly bridging the gap between volatile information in photonic domain nonvolatile magnetic domain, without need any intermediary electronic conversion. Specifically, these systems exhibit strong spin–orbit torque effects, fast wall motion, single-pulse all-optical switching of magnetization. An important open challenge to bring materials brink applications is achieve long-term stability their properties. In this work, we address...

Accurate precipitation prediction is of great significance for regional flood control and disaster mitigation. This study introduced a model based on the least square support vector machine (LSSVM) optimized by genetic algorithm (GA). The was used to estimate each meteorological station over source region Yellow River (SRYE) in China 12 months. Ensemble empirical mode decomposition (EEMD) method select factors realize prediction, without dependence historical data as training set. results...

Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes the rapidly advancing field nanomagnetism in recent years, with high potential for enabling novel, fast energy-efficient memory logic platforms. Fast current-induced domain wall motion (CIDWM) shot AOS have been individually demonstrated different ferrimagnetic alloys. However, stringent requirement their composition control makes these alloys challenging materials wafer-scale production....

As an erosion dynamic index considering the three elements of flood, runoff power (REP) can better reflect influence precipitation, underlying surface, and other factors on sediment transport (ST) flood events. Therefore, it is great significance to study variation characteristics REP its relationship with ST in basin for soil control. In this paper, Fujiang River Basin (FRB) was selected analyze at four hydrological stations from 2009 2018, including Santai, Jiangyou, Shehong, Xiaoheba....

We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities indium phosphide platform. This enables the magnetization state by locally increasing power absorption light at resonance cavity. design add/drop network to grant random access multiple via a...

The antisymmetric interlayer exchange interaction, i.e., Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin provides a new dimension for controlling textures and dynamics. However, the role of IL-DMI in field induced spin-orbit torque (SOT) switching synthetic ferrimagnets (SFi) not been uncovered. Here, we exploit bias fields SFi to address both sign magnitude IL-DMI. Depending on degree imbalance between two magnetic moments SFi,...

Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and multi-domain state (MDS) behavior using longer pulses, which compatible with state-of-the-art integrated photonics. In work, we present our studies on the MDS [Co/Gd]n (n = 1, 2) ps optical pulses across a large composition range. We theoretically...

Synthetic ferrimagnets are an attractive material class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow ultrafast domain wall motion angular momentum compensation. In this work, we systematically study effects strain on perpendicular magnetic anisotropy and compensation Co/Gd Co/Gd/Co/Gd synthetic ferrimagnets. First, spin reorientation transition a bilayer system is investigated in wedge type samples, where report increase...

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest process. On other hand, He ion irradiation has become promising tool for interface engineering spintronic material platforms, giving rise to significant modification magnetic properties. In this paper, we explore use enhance AOS bilayer-based ferrimagnets. The intermixing constituent layers was both numerically simulated and experimentally verified. We...

Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored external field is conventionally required break symmetry. Here, we theoretically experimentally demonstrate field-free SOT switching a perpendicular SAF through introduction interlayer Dzyaloshinskii-Moriya interaction (DMI). By...

Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow ultrafast domain wall motion angular momentum compensation. In this work, we systematically study effects strain on perpendicular magnetic anisotropy and compensation Co/Gd Co/Gd/Co/Gd synthetic ferrimagnets. Firstly, spin reorientation transition a bilayer system is investigated in wedge type samples, where report increase...