Integrated Magneto-photonic Non-Volatile Multi-Bit Memory

• DOI: 10.48550/arxiv.2402.02485
• Publication Date: 2024-02-04
• Authors: Hamed Pezeshki; Pingzhi Li; Reinoud Lavrijsen; Martijn J. R. Heck; B. Koopmans
• Keywords: Magneto; Bit (key); Non-Volatile Memory

We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities indium phosphide platform. This enables the magnetization state by locally increasing power absorption light at resonance cavity. design add/drop network to grant random access multiple via a wavelength-division multiplexing scheme. Based three-dimensional finite-difference time-domain method, we numerically illustrate compact capable and accessing 8 in different 5 nm wavelength spacing conventional (C) telecommunication band. Our holds promise as new paradigm developing ultrafast photonically-addressable memory may also empower novel opportunities photonically-driven spintronic-based neuromorphic computing.