A5043600763- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Photonic Crystals and Applications
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Optic Sensors
- Mechanical and Optical Resonators
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Optical Coatings and Gratings
- Carbon Nanotubes in Composites
- Advanced MEMS and NEMS Technologies
- Plasmonic and Surface Plasmon Research
- Nonlinear Optical Materials Studies
- Neural Networks and Reservoir Computing
- Nanowire Synthesis and Applications
- Quantum Information and Cryptography
- Photorefractive and Nonlinear Optics
- Fern and Epiphyte Biology
- Spectroscopy and Laser Applications
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Magneto-Optical Properties and Applications
- Photonic Crystal and Fiber Optics
Centre de Nanosciences et de Nanotechnologies
2016-2025
Université Paris-Sud
2015-2024
Centre National de la Recherche Scientifique
2015-2024
Université Paris-Saclay
2015-2024
Inria Saclay - Île de France
2021
Direction de la Recherche Fondamentale
2004-2020
Fonctions Optiques pour les Technologies de l’information
2017
Université de Rennes
2017
CEA Grenoble
2012-2017
CEA LETI
2012-2017
Silicon photonics research can be dated back to the 1980s. However, previous decade has witnessed an explosive growth in field. is a disruptive technology that poised revolutionize number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon ability use CMOS-like fabrication resulting high-volume production at low cost. This enabling factor bringing range areas where costs implementation using traditional photonic...
A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length reduced down to 15 microm using butt coupling configuration which sufficient totally absorb light at the wavelength of 1.55 microm. -3 dB bandwidth 42 GHz has been measured a 4V reverse bias with responsivity as high 1 A/W and low dark current density 60 mA/cm(2). At 1.52 microm, obtained under -0.5 V bias. process fully compatible CMOS technology.
We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge using three kinds experimental set-ups. In addition, a responsivity 0.8 A/W 1550 nm measured. An open eye diagrams 40Gb/s were demonstrated under zero-bias wavelength 1.55 µm.
We present the design, fabrication, and characterisation of an array optical slot-waveguide ring resonator sensors, integrated with microfluidic sample handling in a compact cartridge, for multiplexed real-time label-free biosensing. Multiplexing not only enables high throughput, but also provides reference channels drift compensation control experiments. Our use alignment tolerant surface gratings to couple light into chip quick replacement cartridges read-out instrument. Furthermore, our...
Abstract Germanium (Ge) has played a key role in silicon photonics as an enabling material for datacom applications. Indeed, the unique properties of Ge have been leveraged to develop high performance integrated photodectors, which are now mature devices. is also very useful achievement compact modulators and monolithically laser sources on silicon. Interestingly, research efforts these domains put forward current revolution mid-IR photonics. Ge-based alloys present strong advantages...
Ge-based photodetectors operating in the low loss windows (1.3–1.6 μm) of silica fibers are highly desirable for development optical interconnections on silicon-on-insulator substrates. We have therefore investigated structural and properties Ge thick films grown directly onto Si(001) substrates using a production-compatible reduced pressure chemical vapor deposition system. first all evidenced growth regime which is akin to supply-limited one 400–750 °C temperature range (Ea=6.9 kcal...
We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with responsivity as high 1 A/W. technological processes are compatible complementary-metal-oxide-semiconductor (CMOS) technology.
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated.The device exhibits an electrical small signal bandwidth of 19GHz.The therefore candidate for highly compact, wide modulators variety applications.
A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region lateral pin diode. This design allows good overlap between mode density variations. Insertion 5 dB measured with contrast ratio 14 for 3 bandwidth 10 GHz.
Abstract Efficient and reliable on-chip optical amplifiers light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production for CMOS-compatible devices are still lacking. Here, we report ultra-high gain in erbium-based hybrid slot waveguides a monolithic, scalable atomic-layer deposition process....
We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in waveguide configuration.23 GHz bandwidth is experimentally demonstrated from 3 µm wide and 90 long MQW waveguide.The exhibits extinction ratio more than 10 dB over spectral range.Moreover with swing voltage 1 V between 4 V, an as 9 can be obtained corresponding estimated energy consumption 108 fJ per bit.This demonstrates the potentiality MQWs building block silicon compatible photonic...
Mid-infrared (mid-IR) silicon photonics is expected to lead key advances in different areas including spectroscopy, remote sensing, nonlinear optics or free-space communications, among others. Still, the inherent limitations of silicon-on-insulator (SOI) technology, namely early mid-IR absorption oxide and at λ~3.6 µm λ ~8.5 respectively, remain main stumbling blocks that prevent this platform fully exploit spectrum (λ ~2-20 µm). Here, we propose using a compact Ge-rich graded-index Si1-xGex...
40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices based on the carrier depletion effect in a pipin diode to generate good compromise between high efficiency, speed and low loss. is embedded Mach-Zehnder interferometer, self-aligned fabrication process was used obtain precise localization of active p-doped region middle waveguide. Using 4.7 mm (resp. 0.95 mm) long phase shifter, modulator exhibits an extinction ratio 6.6 dB 3.2 dB), simultaneously with loss 6 4.5 dB)...
We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits blazing effect by interleaving standard full (220 nm) and shallow etch (70 trenches in 220 nm thick silicon layer. The high directionality is obtained controlling separation between deep to achieve constructive interference upward direction destructive toward substrate. Utilizing this concept, can be maximized independent bottom oxide thickness. also includes subwavelength-engineered...
Mechanically stretchable photonics provides a new geometric degree of freedom for photonic system design and foresees applications ranging from artificial skins to soft wearable electronics. Here we describe the experimental realization first single-mode devices. These devices, made chalcogenide glass epoxy polymer materials, are monolithically integrated on elastomer substrates. To impart mechanical stretching capability devices built using these intrinsically brittle our strategy involves...
Germanium photodetectors are considered to be mature components in the silicon photonics device library.They critical for applications sensing, communications, or optical interconnects.In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions.This configuration takes advantage compatibility with contact process steps modulators,...
Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for first time, best our knowledge, realization an ultra-directional L-shaped grating...
Midinfrared spectroscopy is a universal way to identify chemical and biological substances. Indeed, when interacting with light beam, most molecules are responsible for absorption at specific wavelengths in the mid-IR spectrum, allowing detect quantify small traces of On-chip broadband sources mid-infrared thus significant interest compact sensing devices. In that regard, supercontinuum generation offers mean efficiently perform coherent conversion over an ultrawide spectral range, single...
Abstract Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, propelled many advances in optoelectronics, information and communication technologies, sensing energy, to name a few. Silicon aims deliver compact high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, indirect bandgap,...
Silicon-on-insulator (SOI) optical waveguides with high electromagnetic field confinement suffer from sidewall roughness which is responsible for strong scattering effects. This letter reports a numerical investigation on the size influence of ultrasmall SOI propagation loss due to roughness. It shown that smaller than 260 /spl times/ nm roughness-induced decreases. As mode reduced, very low light coupling and single-mode fiber can be achieved as 0.5 dB/cm 150 cross-sectional waveguide.
Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width 1μm . Corner mirrors that allow compact 90° turns between two perpendicular waveguides characterized. Measured propagation losses ~0.4 dB/cm ~0.5 for 380-nm 200-nm film, respectively, mirror ~1 dB This allows the development applications such as optical interconnects in integrated circuits over distances larger than several centimeters.