A5059858285- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Advanced Fiber Laser Technologies
- Optical Network Technologies
- Semiconductor Quantum Structures and Devices
- Solid State Laser Technologies
- Mechanical and Optical Resonators
- Advanced Frequency and Time Standards
- Advanced Fiber Optic Sensors
- Laser-Matter Interactions and Applications
- Cold Atom Physics and Bose-Einstein Condensates
- Neural Networks and Reservoir Computing
- Analog and Mixed-Signal Circuit Design
- Spectroscopy and Laser Applications
- Atomic and Subatomic Physics Research
- Photonic Crystals and Applications
- Semiconductor materials and devices
- Photorefractive and Nonlinear Optics
- Advancements in PLL and VCO Technologies
- Photonic Crystal and Fiber Optics
- Advanced Optical Sensing Technologies
- Radio Frequency Integrated Circuit Design
- Physics of Superconductivity and Magnetism
- Advanced Surface Polishing Techniques
MIT Lincoln Laboratory
2015-2025
Massachusetts Institute of Technology
2014-2023
Canadian Standards Association
2013-2020
Institute of Electrical and Electronics Engineers
2014-2018
Human Resources Research Organization
2018
Gorgias Press (United States)
2013
K Lab (United States)
2004-2011
University of Central Florida
2008
Georgia Institute of Technology
1996-2003
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area research in semiconductor materials, physics, devices, applications. Because many figures‐of‐merit for device performance scale nonlinearly bandgap, these semiconductors have long been known to compelling potential advantages over their narrower‐bandgap cousins high‐power RF electronics, as well deep‐UV optoelectronics, quantum...
Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There strong evidence that these integrated technologies will play a key role in quantum systems as they grow few-qubit prototypes tens thousands qubits. The underlying laser with required functionality performance, can only be realized through integration components onto photonic circuits (QPICs) accompanying electronics. In last decade,...
Optically sampled analog-to-digital converters (ADCs) combine optical sampling with electronic quantization to enhance the performance of ADCs. In this paper, we review prior and current work in field, then describe our efforts develop extend bandwidth a linearized technique referred as phase-encoded sampling. The uses dual-output electrooptic transducer achieve both high linearity 60-dB suppression laser amplitude noise. is extended by optically distributing post-sampling pulses an array...
Ultrastable lasers serve as the backbone for some of most advanced scientific experiments today and enable ability to perform atomic spectroscopy laser interferometry at highest levels precision possible. With recent increasing interest in applying these systems outside laboratory, it remains an open question how realize a source that can reach extraordinary narrow linewidth required still remain sufficiently compact portable field use. Critical development this ideal is necessity be...
We review the development of a new class high-power, edge-emitting, semiconductor optical gain medium based on slab-coupled waveguide (SCOW) concept. restrict scope to InP-based devices incorporating either InGaAsP or InGaAlAs quantum-well active regions and operating in 1.5-μm-wavelength region. Key properties SCOW include large transverse mode dimensions (>;5 × 5 μm), ultralow confinement factor (Γ ~ 0.25-1%), small internal loss coefficient (α <sub...
We demonstrate scalable and intercompatible multilayer photonic platforms that operate over a multioctave wavelength range from the near-ultraviolet (NUV) into short-wave infrared (SWIR). low-loss waveguides (≤3 dB/cm above 370 nm <;0.3 between 633 1550 for both TE TM polarizations) present verified component libraries at several wavelengths within this range. use of thermo-optic heaters tuning in SWIR show we can automatically initialize complex optical filters. Our are fabricated silicon...
Low phase noise microwave oscillators are at the center of a multitude applications that span gamut photonics and electronics. Within this space, optically derived approaches to frequency synthesis particularly compelling owing their unique combination ultrawideband access potential for resiliency temperature environmental perturbation via common-mode rejection. We demonstrate here an optical divider uses 30 terahertz gap between two stimulated Brillouin scattering (SBS) lasers as basis...
We report the demonstration of an InGaAlAs/InP quantum-well, high-power, low-noise packaged semiconductor external cavity laser (ECL) operating at 1550 nm. The comprises a double-pass, curved-channel slab-coupled optical waveguide amplifier (SCOWA) coupled to narrow-bandwidth (2.5 GHz) fiber Bragg grating passive using lensed-fiber. At bias current 4 A, ECL produces 370 mW fiber-coupled output power with Voigt lineshape having Gaussian and Lorentzian linewidths 35 1 kHz, respectively,...
Optical atomic clocks have demonstrated revolutionary advances in precision timekeeping, but their applicability to the real world is critically dependent on whether such can operate outside a laboratory setting. The challenge clock portability stems from many obstacles not only miniaturizing underlying components of $-$ namely ultrastable laser, frequency comb, and reference itself also making resilient environmental fluctuations. Photonic integration offers one compelling solution...
Photonically-synthesized microwave signals have demonstrated the ability to surpass phase-noise performance achievable by traditional means of RF signal generation. However, in order for microwave-photonic oscillators truly replace their counterparts, this phase noise advantage must also be realizable when operating outside a laboratory. Oscillators general are known notoriously vibration sensitive, with both and optical degrading sharply all but most stationary environments. We demonstrate...
We present our development of a novel heterogeneous chip-tiling approach that enables the realization extremely large-area integrated circuits (ELAICs) or “Megachips”- containing tens closely spaced small chiplets are interconnected via redistribution layers (RDLs) fabricated using lithographic process on top tiled chiplets. The concept Megachip is to interconnect specialized chiplets, into large, single-chip-like monolithic circuit. Multiple can be within redistribute, reroute, electrical...
Phase-encoded optical sampling allows radio-frequency and microwave signals to be directly down-converted digitized with high linearity greater than 60-dB (10-effective-bit) signal-to-noise ratio. Wide-band electrical can processed using relatively low rates provided that the instantaneous signal bandwidth is less Nyquist bandwidth. We demonstrate capabilities of this technique by a 60-MS/s system down-sample two different FM chirp signals: 1) baseband (0-250 MHz) linear-chirp waveform 2)...
We report the demonstration of high-power semiconductor slab-coupled optical waveguide lasers (SCOWLs) operating at a wavelength 1.5 μm. The operate with large (4×8 μm diameter) fundamental mode and produce output power in excess 800 mW. These structures have very low loss (/spl sim/0.5 cm/sup -1/) enabling centimeter-long devices for efficient heat removal. allows 55% butt-coupling efficiency to standard fiber (SMF-28). Comparisons are made between SCOWL having nominal 4- 5-μm-thick waveguides.
We report the first demonstration of a high-power semiconductor optical amplifier (SOA) based on slab-coupled waveguide concept. This concept allows realization SOAs having large fundamental modes, low loss, and small confinement factor. These attributes support output saturation power, long length for efficient heat removal, direct butt-coupling to single-mode fibers. The 1.5-μm InGaAsP-InP quantum-well described here has 1 cm, 1/e <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We demonstrate the transfer of largest ( in diameter) available InP-based epitaxial structure to silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and void-free interface was obtained. A multiple quantum-well diode laser is well-preserved after bonding, as indicated by high-resolution X-ray diffraction measurement photoluminescence (PL) map. bowing measured, resulting low bonding-induced strain . PL shows standard deviation 1.09% across entire...
A lens-enabled chip-scale beam steering device for LIDAR is theoretically analyzed and experimentally demonstrated with azimuthal, ϕrange = 38.8°, polar, θrange 12.0°, beam-steering. The allows beam-steering at low power cost.
Silicon nitride (Si3N4) is a versatile waveguide material platform for CMOS foundry-based photonic integrated circuits (PICs) with low loss and high-power handling. The range of applications enabled by this significantly expanded the addition large electro-optic nonlinear coefficients such as lithium niobate. This work examines heterogeneous integration thin-film lithium-niobate (TFLN) on silicon-nitride PICs. Bonding approaches are evaluated based interface used (SiO2, Al2O3 direct) to form...
Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs with and without Be doping. The Be-doped material observed contain significantly fewer AsGa antisite defects than the undoped material, no evidence found for Be–As complexes. Annealing of LTG-InGaAs forms precipitates preferentially in material. previously dependence optical response time on doping annealing attributed changes As concentration compensation effect Be.
Low-temperature-grown Be-doped In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells are investigated via wavelength-dependent time-resolved nonlinear absorption measurements. Annealed material, in contrast to annealed undoped is found retain the carrier lifetime reduction induced by low-temperature growth this narrow-gap material system. This attributed Be–As complexes which, addition producing high resistivity provide anneal–stable trap states. We also report that ultrafast band-edge and...
We report the demonstration of a 1.5 µm InGaAsP mode-locked slab-coupled optical waveguide laser (SCOWL) producing 10 ps pulses with energies 58 pJ and average output powers 250 mW at repetition rate 4.29 GHz. To best our knowledge, this is first passively laser. The large mode low confinement factor SCOWL architecture allows realization monolithic lasers high power pulse energy. nearly diffraction limited M2 values less than 1.2 in both directions.
In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III–V epitaxial transfer Si-on-insulator substrate through O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by scanning acoustic microscopy with sub-μm resolution. The photoluminescence (PL) map shows less than 1 nm change average peak wavelength, and even improved intensity (4% better) full width at half maximum (41% after transfer. Small uniformly distributed...
Noise characteristics are studied for a self-stabilized laser utilizing the interplay between intracavity dispersion and optical frequency shift. The noise suppression bandwidth of this scheme is from 0 to ~100 KHz showed reduction residual timing jitter (integrated 0.9 Hz 1 MHz) 2.2fs 660 attosecond which represents, our knowledge, lowest reported an actively mode-locked