A5077274071- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Photorefractive and Nonlinear Optics
- Photonic Crystal and Fiber Optics
- Advanced Photonic Communication Systems
- Mechanical and Optical Resonators
- Laser-Matter Interactions and Applications
- Advanced Fiber Optic Sensors
- Spectroscopy and Laser Applications
- Advanced MEMS and NEMS Technologies
- Solid State Laser Technologies
- Semiconductor Quantum Structures and Devices
- Diamond and Carbon-based Materials Research
- Terahertz technology and applications
- Silicon Nanostructures and Photoluminescence
- Plasmonic and Surface Plasmon Research
- Optical Coatings and Gratings
- Ferroelectric and Piezoelectric Materials
- Laser Material Processing Techniques
- Thin-Film Transistor Technologies
- Neural Networks and Reservoir Computing
- Semiconductor materials and devices
Ghent University
2016-2025
IMEC
2020-2025
Ghent University Hospital
2015-2023
Université Libre de Bruxelles
2023
Photonics (United States)
2018-2022
Ludwig-Maximilians-Universität München
2021
Princeton University
2014
The high index contrast silicon-on-insulator platform is the dominant CMOS compatible for photonic integration. successful use of silicon chips in optical communication applications has now paved way new areas where can be applied. It already emerging as a competing technology sensing and spectroscopic applications. This increasing range photonics instigates an interest exploring materials, some drawbacks these applications, e.g., not transparent visible wavelength range. Silicon nitride...
We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pumping 1-cm long dispersion engineered silicon wire waveguide 70 fs pulses energy of merely 15 pJ. confirm the phase coherence output beating narrow bandwidth CW lasers. show that experimental results are in agreement numerical simulations.
There is a rapidly growing demand to use silicon and nitride (Si 3 N 4 ) integrated photonics for sensing applications, ranging from refractive index spectroscopic sensing.By making of advanced CMOS technology, complex miniaturized circuits can be easily realized on large scale at low cost covering visible mid-IR wavelengths.In this paper we present our recent work the development Si -based photonic various applications.We report findings waveguide-based absorption, Raman surface enhanced...
Silicon does not emit light efficiently, therefore the integration of other light‐emitting materials is highly demanded for silicon photonic integrated circuits. A number approaches have been extensively explored in past decade. Here, most recent progress this field reviewed, covering III‐V‐to‐silicon bonding, transfer printing, epitaxial growth and use colloidal quantum dots. The basic to create waveguide‐coupled on‐chip sources different application scenarios are discussed, both nitride...
We present the current state of art in micro-transfer printing for heterogeneously integrated silicon photonic circuits. The versatility technology is highlighted, as way ahead to make this a key enabler next-generation systems-on-chip.
We demonstrate the generation of a supercontinuum in 2 cm long silicon wire by pumping with mid-infrared picosecond pulses anomalous dispersion regime.The extends from 1535 nm up to 2525 for coupled peak power 12.7 W. It is shown that originates primarily amplification background noise.A detailed analysis spectral components which are generated through phase-matched processes applied extract group velocity and fourth-order coefficient waveguide.
Optical frequency combs emerge as a promising technology that enables highly sensitive, near-real-time spectroscopy with high resolution. The currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense generation (line spacing in the range of 100 MHz to 1 GHz). However, their integrated low-cost counterparts, which semiconductor mode-locked lasers, limited by large spacing, small number lines broad optical linewidth. In this study, we report...
Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction eventual Si systems-on-chip impeding expansion to broader range Here, we discuss promising technology, micro-transfer-printing (μTP),...
In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication sensing. We elaborate integration strategy describe a broad range of devices realized this platform covering wavelength from 850 nm to 3.85 μm.
The generation of an octave spanning supercontinuum covering 488-978 nm (at -30 dB) is demonstrated for the first time on-chip. This result achieved by dispersion engineering a 1-cm-long Si3N4 waveguide and pumping it with 100-fs Ti:Sapphire laser emitting at 795 nm. work offers bright broadband source biophotonic applications frequency metrology.
Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses relative benefits of both platforms.
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well integration of III-V semiconductors, IV-VI colloidal nanoparticles GeSn alloys on these increasing functionality. The strong nonlinearity silicon combined with low nonlinear absorption in mid-infrared is exploited to generate picosecond pulse based...
We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of parameter these photonic reveals figure merit larger than 2. It is observed that optical properties waveguides degrade with time, but this degradation can be reversed by annealing samples. A four wave mixing conversion efficiency + 12 dB demonstrated 320 Gbit/s serial waveform data sampling experiment 4 mm long nanowire.
We present a degenerate four-wave mixing experiment on silicon nitride (SiN) waveguide covered with gated graphene. observe strong dependencies signal-pump detuning and Fermi energy, i.e. the optical nonlinearity is demonstrated to be electrically tunable. In vicinity of interband absorption edge ($2|E_F|\approx \hbar\omega$) peak value nonlinear parameter $\approx$ 6400 m$^{-1}$W$^{-1}$, corresponding graphene sheet conductivity $|\sigma_s^{(3)}|\approx4.3\cdot 10^{-19}$ A m$^2$V$^{-3}$ measured.
The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8μm is reported.The devices are fabricated on 200mm SOI wafers in a CMOS pilot line.Both arrayed waveguide grating structures planar concave were designed tested.Low insertion loss (1.5-2.5dB) good crosstalk characteristics (15-20dB) demonstrated, together with propagation losses the range 3 to 6dB/cm.
The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization integrated optical filters with unprecedented performance. Such passive circuits, when combined phase modulators and low-noise lasers, have potential to improve current state art most critical components in coherent communications, beam steering, microwave photonics applications. However, large refractive index difference between silicon nitride common III-V gain materials telecom...
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such modulators are scarce and still lack in performance. Ideally, modulator should have high bandwidth, good modulation efficiency, low loss, cover wide wavelength range. Here, we demonstrate the first electro-optic based on ferroelectric lead zirconate titanate (PZT) films SiN, both O- C-band. Bias-free operation, bandwidths beyond 33 GHz data rates of 40 Gbps...
We demonstrate electrically pumped, heterogeneously integrated lasers on thin-film lithium niobate, featuring electro-optic wavelength tunability.
Silicon photonics (SiPh) is a disruptive technology in the field of integrated and has experienced rapid development over past two decades. Various high-performance Si Ge/Si-based components have been developed on this platform that allow for complex photonic circuits (PICs) with small footprint. These PICs found use wide range applications. Nevertheless, some non-native functions are still desired, despite versatility Si, to improve overall performance at same time cut cost eventual...
Integrated photonic systems require fast modulators to keep up with demanding operation speeds and increasing data rates. The silicon nitride integrated platform is of particular interest for applications such as datacom, light detection ranging (LIDAR), quantum photonics, computing owing its low losses CMOS compatibility. Yet, this inherently lacks high-speed modulators. Heterogeneous integration lithium niobate on waveguides can address drawback strong Pockels effect. We demonstrate the...
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms scalability, standardization, complexity integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing thin-film brings TFLN well-established silicon ecosystem by easy "pick place", which showcases immense potential constructing...
We present what we believe to be the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off up 26.5 dB at telecom wavelength is reported. Measured nonlinear parameter 770 W(-) m(-1), absorption 28 W(-1) bandgap 1.61 eV.