A5056809027- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Radio Frequency Integrated Circuit Design
- Photorefractive and Nonlinear Optics
- Microwave Engineering and Waveguides
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Advanced Fiber Laser Technologies
- Innovative Energy Harvesting Technologies
- Microgrid Control and Optimization
- Analog and Mixed-Signal Circuit Design
- Energy Harvesting in Wireless Networks
- Smart Grid Energy Management
- Wind Turbine Control Systems
- Energy Load and Power Forecasting
- Wireless Power Transfer Systems
- Process Optimization and Integration
- Electric Power System Optimization
- Power Quality and Harmonics
- Solid State Laser Technologies
- Agricultural Economics and Practices
- ICT Impact and Policies
- Frequency Control in Power Systems
Ghent University
2020-2025
Netaji Subhas University of Technology
2023
IMEC
2022-2023
Flanders Make (Belgium)
2022
Tata Power Solar (India)
2022
Dr. Ram Manohar Lohia Avadh University
2021
Manipur University
2021
University of Pretoria
2015-2018
Integrated photonic systems require fast modulators to keep up with demanding operation speeds and increasing data rates. The silicon nitride integrated platform is of particular interest for applications such as datacom, light detection ranging (LIDAR), quantum photonics, computing owing its low losses CMOS compatibility. Yet, this inherently lacks high-speed modulators. Heterogeneous integration lithium niobate on waveguides can address drawback strong Pockels effect. We demonstrate the...
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms scalability, standardization, complexity integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing thin-film brings TFLN well-established silicon ecosystem by easy "pick place", which showcases immense potential constructing...
Abstract The heterogeneous integration of ferroelectric BaTiO 3 thin films on silicon (Si) and nitride (SiN)‐based platforms for photonic integrated circuits (PICs) plays a crucial role in the development future nanophotonic film modulators. Since electro‐optic (EO) properties strongly depend their crystal phase texture, these is far from trivial. So far, conventional route using SrTiO template combination with high vacuum deposition methods has been developed, but it low throughput,...
The increasing demand for high data rates and low power consumption puts silicon photonics at the edge of its capabilities. heterogeneous integration optical ferro-electric materials on enhances functionality insulator (SOI) platform to meet these demands. Lead zirconate titanate (PZT) thin films with a large Pockels coefficient good quality can be directly integrated SOI waveguides fast electro-optic modulators. In this work, relative permittivity dielectric loss PZT deposited by chemical...
We present recent results on compact and power efficient C-band distributed feedback lasers through adhesive bonding of a III-V die onto silicon-on-insulator circuit. A wall-plug efficiency up to 16% is achieved for bias currents below 40 mA. The laser cavity 180 µm long single facet output 11 mW measured at 20 °C by incorporating broadband reflector in the silicon waveguide one side cavity. Single mode operation 1567 nm with suppression ratio around 55 dB demonstrated. By controlling phase...
An all-silicon analog radio-over-fiber transmitter chipset is presented for narrowband operation in the unlicensed 60 GHz V-band use low-cost and low-power distributed antenna systems. The consists of a low-noise high-speed quadrature driver RFIC an EAM based single-sideband I/Q modulator PIC. Resonant matching used to drive EAMs which provides 6 dB more gain compared on-chip 50 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Next generation high-speed wireline and optical communications will target single lane data rates over 200Gb/s. For this, the transmission of >100Gbaud PAM-4 is a key step. Recent transmitters in advanced CMOS FinFET nodes [1,2] provide extensive transmit-side FFE capabilities at respectively 64 56Gbaud. Speed limitations these technologies make transition to challenge. Alternatively, InP-based multiplexers like [3] manage reach easily. They also offer possibility create high-swing output...
We present a 6-bit 56-GSa/s digital-to-analog converter (DAC), implemented in 55 nm SiGe BiCMOS. It consumes 2.36 W of which 0.77 is utilized the DAC core. Experiments show an analog 3-dB bandwidth exceeding 28 GHz and effective number bits (ENOB) 3.9. demonstrate transmission 112 Gb/s four-level pulse-amplitude modulation (PAM-4) 168 PAM-8 over channel consisting electrical probe 20 cm RF cables. With pre-equalization compensating loss, we achieve 0.59 Vpp signal swing.
Abstract To address the rising demand for high-speed wireless data links, communication systems operating at frequencies beyond $${100}\,\hbox {GHz}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mn>100</mml:mn> <mml:mspace/> <mml:mtext>GHz</mml:mtext> </mml:mrow> </mml:math> are being targeted. A key enabling technology in development of these is phased antenna array. Yet, design and implementation such steerable arrays over comes with a multitude challenges. In...
This article investigates a linear differential modulator driver for optical communication links beyond 120 GBd. The was implemented in 55-nm SiGe BiCMOS technology with an <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_T$</tex-math> </inline-formula> / notation="LaTeX">$f_{\text{MAX}}$</tex-math> of 330/370 GHz, featuring traveling wave output stage driven by lumped variable gain amplifier (VGA) and...
An analog radio-over-fiber photoreceiver based on a resonant narrowband transimpedance low noise amplifier (TILNA) is proposed and demonstrated for use in low-cost low-power remote radio heads distributed antenna systems the unlicensed 60 GHz band. The designed to present conjugate matched impedance wirebonded photodiode where input has real part of 10Ω while output towards 50 Ω. Fabricated 55 nm SiGe BiCMOS technology, TILNA features three stage common emitter with 17 dB gain, 3.4 figure,...
Abstract We present a single photonic chip that processes both optical and microwave signals, can convert signals between the two domains. Our chip, fabricated in IMEC’s iSiPP50G silicon photonics process, is capable of generation detection analog electrical program user-defined filter response The integrates all essential components like modulators, filters, photodetectors, as well tunable lasers enabled by transfer-printed indium phosphide amplifiers. This makes it possible to operate...
<title>Abstract</title> We present a photonic engine that processes both optical and microwave signals, can convert signals between the two domains. Our chip, fabricated in IMEC's iSiPP50G silicon photonics process, is capable of generation detection analog electrical program user-defined filter responses This single chip integrates all essential integrated components like modulators, filters, photodetectors, as well tunable lasers enabled by transfer-printed indium phosphide amplifiers....
Micro-transfer printing of thin-film lithium niobate (TFLN), as a backend integration method, enables selective and localized placement TFLN to silicon platform, facilitating the creation complex, multi-material systems that combine with other components. In this study, we investigate transfer technique for TFLN. We present experimental results from hybrid silicon-LN devices created using including micro-transfer printed ring modulators, photonics crystal (PhC) Bragg Grating among others.
This paper presents an overview of SiGe BiCMOS circuits for next-generation optical communication links targeting 100 GBd PAM4 modulation per wavelength to support 4-lane 800Gb and 8-lane 1.6Tb Ethernet. Signal generation at these rates is challenging. For this, analog multiplexer making use return-to-zero (RZ) presented. The explicit RZ enables equalization the interleaved signal. Higher orders are obtained with a 120 4-to-1 mixed-signal 7-tap feedforward equalizer. equalizer consists...
An integrated balanced quasi-coherent receiver front-end is designed, fabricated, and experimentally demonstrated for 50G Passive-Optical-Network. At 50 Gb/s NRZ, the measured OMA sensitivity (BER=1e-2) -25.8 dBm B2B -19.8 after 5 km SSMF in C-band, without chromatic-dispersion compensation equalization DSP.