A5058874018- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Advanced Fiber Laser Technologies
- Microwave Engineering and Waveguides
- Horticultural and Viticultural Research
- Optical Wireless Communication Technologies
- Advanced Optical Network Technologies
- Microwave and Dielectric Measurement Techniques
- Neural Networks and Reservoir Computing
- Advanced Optical Sensing Technologies
- Advanced Frequency and Time Standards
- Fermentation and Sensory Analysis
- Photonic Crystals and Applications
- Advancements in PLL and VCO Technologies
- Advanced Semiconductor Detectors and Materials
- French Urban and Social Studies
- Mobile Agent-Based Network Management
- Silicon Nanostructures and Photoluminescence
- Telecommunications and Broadcasting Technologies
- Spectroscopy and Laser Applications
- Nuts composition and effects
III V Lab
2015-2024
Thales (France)
2014-2024
Nokia (France)
2017-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2014-2024
CEA LETI
2014-2024
Nokia (Finland)
2018-2023
Thales (United Kingdom)
2018-2023
Alcatel Lucent (Germany)
2014-2023
Centre Tecnologic de Telecomunicacions de Catalunya
2021
University of South Wales
2021
Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting groundwork for implementation complex on-chip optical systems that go beyond single device performance. Recent advances on field are expected to impact next generation communications attain low power, high efficiency and portable solutions. To accomplish this aim, intense research hybrid lasers, modulators photodetectors is being done implement modules photonic...
We experimentally demonstrate a multiband intermediate frequency-over-fiber/mmWave (IFoF/mmWave) fiber/wireless mobile fronthaul link for gigabit capacity over the unlicensed V-band (57–64 GHz). Digital synthesis of radio waveforms is performed at baseband unit using digital subcarrier multiplexing technique, whereas predistortion exploited to cope with analog IFoF channel impairments without any further processing digital-free remote head. Commercial optoelectronic components and antenna...
We demonstrate a 56-GBd pulse-amplitude modulation-4 compact InP transmitter module integrating distributed feedback laser and an electro-absorption modulator, which exhibits 50-GHz bandwidth, >13-dB extinction ratio up to 1.5-mW output power. Successful amplifier-free 112-Gb/s transmission is performed over 2 km using low complexity three-taps equalization. also study the tradeoff between receiver equalizer length performance, show successful signal recovery with bandwidths as 18 GHz when...
Emergence of new applications like cloud computing, video on demand or deployment high-speed cellular network lead to an increasing short reach transmission for access datacenter. Due the low sensitivity PIN receiver and lack APD above 10 Gb/s, optical preamplification is a promising concept receiver. We demonstrate SOA-PIN/TIA module which integrates SOA-PIN photonic circuit TIA. This has large responsivity 44 A/W, polarization dependence below 2 dB, noise figure 8.5 dB 3-dB bandwidth 35...
We demonstrate the monolithic integration of a buried heterostructure semiconductor optical amplifier (SOA) and deep ridge PIN photodiode for high-speed on-off keying links at 1.55 μm. The structure allows separate optimization SOA photodiode. integrated receiver presents simultaneously peak responsivity 88 A/W with low polarization dependence loss (<; 1 dB), noise figure (8.5 wide 3-dB electrical bandwidth (≈ 50 GHz). This corresponds to very large gain-bandwidth product 3.5 THz. To our...
In this paper we present an optimized high-speed uni-traveling carrier photo-diode (UTC PD) for 100 Gbit/s applications. The designed photodiode operates at 1.55 μm wavelength with a 3 dB bandwidth exceeding 110 GHz, dark current of 1 nA -2 V and peak saturation about 30 mA V. A 40% improvement is achieved by employing new transmission lines (TMLs) to equalize the intrinsic response detector. addition, results tested UTC, using NRZ modulation format show considerably improved eye quality.
This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable meeting network capacity requirements beyond-5G wireless communications system (WCS). Keeping in mind that signal generation for networks relies on power loss management, we propose single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics optoelectronic circuits (OEICs) monolithically Indium-Phosphide (InP) die. Through...
A compact photonically-driven wireless emitter based on a Uni-Traveling-Carrier photodiode (UTC-PD) which directly connects to short asymmetrical inductive dipole (SAID) antenna is presented. The design exploits the dependence of UTC-PD output impedance with reverse bias voltage provide maximum power transfer via conjugate matching at different operative frequencies within Ka band (26.5–40 GHz) 6 dB directivity and 1 GHz 10 return loss channel width. Electro-optical transmission measurements...
We present a preamplified high-speed photoreceiver comprising unitraveling carrier photodiode (UTC) monolithically integrated with semiconductor optical amplifier (SOA). The SOA-UTC exhibits above 95-GHz 3-dB bandwidth, 8-dB noise figure, low polarization dependence loss of 1-2 dB and 95-A/W peak responsivity corresponding to record gain-bandwidth product 6.1 THz.
We present an electro-absorption modulated laser with 6dBm power leading to record budget NRZ transmissions at 1.55μm: 37dB 10Gb/s over 50km and 30dB 28Gb/s 10km a pre-amplified photodiode.
A 12Gb/s analog IFoF fiber-wireless V-band link is experimentally demonstrated employing a digital 6-IF-carrier stream and modulated onto linear high-power Externally Modulated Laser, achieving record capacity for EML-based multi-band 5G Fronthaul over 7km fiber distance.
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche multiplication layer form photodiode (APD) the Separated Absorption Multiplication (SAM) structure, one can take advantage very low-noise properties process in large-bandgap AI(Ga)(ln)As improve receiver sensitivity by > 10 dB. Under high-power-level...
A 112-Gb/s PAM4 transmitter module which integrates InP DFB and EAM demonstrated for the first time 2 km transmission with only 3-taps equalizer due to 50 GHz bandwidth, >13 dB extinction ratio 1.5 mW output power.
We demonstrate a receiver module which associates preamplified detector with transimpedance amplifier for next generation PON network. The achieved in NRZ very high sensitivity of -23 dBm at 25 Gbit/s and -21 40 Gbit/s.
In this paper, we present a systematic analysis for the design of Si-rich-nitride (SRN) based interposer waveguide layers interfacing InP-based devices and Si3N4 waveguides, towards monolithic co-integration active passive elements through Back-End-Of-Line process. The investigation is performed via extensive 2D-eigenvalue 3D-FDTD electromagnetic simulations focuses on three different designs, where performance in terms coupling loss back reflections exchanged fabrication complexity....
This letter reports a 40-Gb/s photoreceiver module with differential outputs designed for short reach applications such as access network and data center interconnect. It consists of an indium phosphide (InP) semiconductor optical amplifier monolithically integrated p-i-n (SOA-PIN) photodiode, co-packaged InP linear transimpedance (TIA), both fabricated at III-V Lab. A matching circuit is placed between the SOA-PIN TIA in order to increase cutoff frequency. The exhibits -3 dB bandwidth 43...
We demonstrated a wide wavelength-tuning range of 90 nm with hybrid InP/SOI laser, based on two integrated intracavity silicon ring resonators which produce Vernier effect, and low losses cavity delimited by broadband Sagnac mirrors.
First real-time 25-Gbit/s burst-mode operation of an integrated SOA-PIN/TIA receiver for future generation T(W)DM-PON is presented. The device has a 2.7-dB better sensitivity than APD photoreceiver and 13-dB PIN at this bitrate.
We measure the duty cycle impact of pulsed signals at 1.5 μm wavelength used for optical THz generation. Our results suggest pulse coding wireless transmitters can maximize emitted power.
We demonstrate the capacity of a monolithically integrated SOA-UTC photodiode to meet HS-PON upstream burst mode sensitivity requirements at 50Gb/s (-26.5dBm and 20km achieved), record error free performances 58,2Gb/s.
We demonstrate a SOA-UTC receiver PIC in O-band with up to 90 A/W responsivity, NF below 8-dB, >-10 dBm saturation input power and 33 GHz bandwidth which shows 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> sensitivity at 32 Gb/s of -20.5 dBm.
Bulk InGaAs layer under slight tensile strain, embedded in InGaAsP barriers and grown on InP, was used as semiconductor optical amplifier active for polarisation insensitive amplification. The material bandstructure obtained by solving the Luttinger–Kohn Hamiltonian, including tetragonal strain contribution. Study of gain performed taking into account effect k-dependent bandgap shrinkage. amplifiers device amplified spontaneous emission noise figure have been investigated a function...
A steady-state model of a strained MQW-SOA is described.Least-squares fitting the to experimental polarization resolved amplified spontaneous emission spectra used obtain difficult measure parameters such as linebroadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients.Well capture escape processes are modeled by carrier density dependent net time which accounts for barrier effects.Simulations comparisons with data given...
This paper reports a differential photoreceiver module designed for short reach applications such as access network and data center interconnect. It consists of monolithically integrated semi-conductor optical amplifier with PIN photodiode linear transimpedance (TIA) mounted on the same carrier. A matching circuit is placed between TIA in order to increase cut-off frequency. The shows −3 dB bandwidth 43 GHz, single-ended conversion gain 10 000 V/W an input power −25 dBm sensitivity at 40...