A5030671339- Semiconductor Quantum Structures and Devices
- Radio Frequency Integrated Circuit Design
- Superconducting and THz Device Technology
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Bluetooth and Wireless Communication Technologies
- Ferroelectric and Negative Capacitance Devices
- Advanced Photocatalysis Techniques
- Energy Harvesting in Wireless Networks
- Ammonia Synthesis and Nitrogen Reduction
- Microwave and Dielectric Measurement Techniques
- Semiconductor Lasers and Optical Devices
- Wireless Body Area Networks
- Electrocatalysts for Energy Conversion
- Advanced Photonic Communication Systems
ETH Zurich
2015-2022
Integrated Laboratory Systems, Inc.
2022
This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable meeting network capacity requirements beyond-5G wireless communications system (WCS). Keeping in mind that signal generation for networks relies on power loss management, we propose single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics optoelectronic circuits (OEICs) monolithically Indium-Phosphide (InP) die. Through...
A multiscale technology computer-aided design (TCAD) simulation methodology is presented to calculate the intrinsic transit time of InP double heterojunction bipolar transistors (DHBTs). 2-D hydrodynamic (HD) simulator employed produce dc characteristics and electrostatic potentials selected devices. Utilizing cuts obtained potential profiles as inputs, a 1-D full-band, atomistic quantum transport (QT) solver then deployed determine ballistic electronic properties these components. The times...
This article reports a detailed approach toward optimization of on-wafer thru-reflect-line (TRL) calibration structures for submillimeter-wave characterization state-of-the-art indium-phosphide (InP) technology, validated by thorough experimentation and electromagnetic (EM) simulation. The limitations the existing RF test high-frequency measurements beyond 110 GHz are analyzed through EM Using an procedure based on raw simulated data, TRL were developed fabricated in subsequent run this...
"Type-II" InP/GaAsSb DHBTs are the first non-GaInAs -based transistors to show oscillation frequencies > 1 THz with associated benefits of higher breakdown voltages, low power dissipation, and superior linearity scaling characteristics. Whereas no large-signal characterization is found in literature, display attractive 94 GHz load-pull characteristics, less aggressively scaled devices achieve record saturated output density per unit emitter area. The physical advantages Type-II reviewed...
Double heterojunction bipolar transistors (DHBTs) are intended to extend the breakdown voltage beyond what is possible in single transistors, ideally without sacrificing frequency performance. InP/GaAsSb DHBTs offer most favorable cutoff versus tradeoff among all transistors. It has been shown that addition of Indium a GaAsSb base further increases current gain frequencies fT. In present article, we compare ternary (GaAsSb) and quaternary (GaInAsSb) graded fabricated side-by-side shed light...
The intrinsic performance of “type-II” InP/GaAsSb double heterojunction bipolar transistors (DHBTs) toward and beyond THz is predicted analyzed based on a multi-scale technology computer aided design modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1D full-band, atomistic quantum transport calculations to shed light future DHBT generations whose dimensions decreased step-by-step, starting from the current device...
The quasistatic and transient transfer characteristics of Hf 0.57 Zr 0.43 O 2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WO x channel are investigated using 2-D time-dependent Ginzburg-Landau model as implemented in state-of-the-art technology computer aided design tool. Starting from an existing FeFET configuration, the influence different parameters geometries is analyzed before providing guidelines for next-generation devices increased “high ( R H ) to low L )”...