A5077543843- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Microwave Engineering and Waveguides
- Advanced Fiber Laser Technologies
- Solid State Laser Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Power Amplifier Design
- Advanced Semiconductor Detectors and Materials
- Nanowire Synthesis and Applications
- Laser-Matter Interactions and Applications
- Acoustic Wave Resonator Technologies
- Photonic Crystal and Fiber Optics
- GaN-based semiconductor devices and materials
- Superconducting and THz Device Technology
- Microwave and Dielectric Measurement Techniques
- Advanced Optical Sensing Technologies
- Optical Network Technologies
- Ferroelectric and Negative Capacitance Devices
- Millimeter-Wave Propagation and Modeling
- Terahertz technology and applications
ETH Zurich
2014-2024
Board of the Swiss Federal Institutes of Technology
2016
École Polytechnique Fédérale de Lausanne
2005-2014
This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave THz applications. Process modeling status challenges are reviewed. The topics of thermal substrate effects, reliability, HF measurements also discussed.
We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with record <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\mathrm {MAX}} =1.2$ </tex-math></inline-formula> THz, simultaneous {T}} =475$ GHz, and notation="LaTeX">$BV_{\mathrm {CEO}} =5.4$ V. The resulting {CEO}}\,\times \,{f}_{\mathrm =6.48$ THz-V is unparalleled in semiconductor technology. Devices...
The development of InP/GaAsSb DHBTs is reviewed and contextualized with respect to other III-V high-speed technologies. Pertinent material properties challenges in the proper assessment f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Max</sub> are discussed. An iterative de-embedding algorithm involving no additional test structures/measurements shown yield correct fMAx from unilateral gain data for both HEMTs.
We report the first bias-free performance of Type-II modified GaInAsSb/InP UTC-PD for high-bandwidth and high-power applications. The achieves zero-bias bandwidth 60 GHz high output power -11 dBm at 100 GHz.
The "type-II" staggered band lineup at the base-collector junction of InP/GaAsSb double-heterojunction bipolar transistors (DHBTs) eliminates current blocking effect observed in InP/GaInAs DHBTs and allows use a pure binary InP collector that provides high breakdown voltage good thermal conductivity. Improvement power gain cutoff frequency fMAX requires reduction base resistance and/or capacitance. We have decreased contact resistivity by situ Ar sputtering immediately prior to deposition....
A new W-band active load-pull system is presented. It the first to implement a 94 GHz load by means of an loop exploiting frequency conversion techniques. The configuration demonstrates number advantages that overcome typical limitations passive tuners or conventional open-loop techniques in cost-effective way: reflection coefficients Γ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</sub> as high 0.95 magnitude can be achieved at GHz, thus...
We report InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with simultaneous current and power gain cutoff frequencies of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> = 503/780 GHz. Devices a 0.2 × 4.4 μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> emitter area feature peak DC β 17 common-emitter breakdown voltage BVCEO 4.1 V. To the best our...
We describe the realization of ternary base InP/Ga(As,Sb) DHBTs, where grading is implemented by ramping As/Sb composition ratio from collector to emitter side: this enables a cutoff frequency f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 603 GHz at room temperature with breakdown voltage BV xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> = 4.2 V, for record xBV product 2.53 THz-V. Device performance improves further cooling...
Combining a pseudomorphically strained (Ga,In)P emitter with GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.6</sub> Sb xmlns:xlink="http://www.w3.org/1999/xlink">0.4</sub> base effectively eliminates the heterojunction type-II conduction band offset in InP/GaAsSb double bipolar transistors (DHBTs). A peak f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> of 436 GHz at J xmlns:xlink="http://www.w3.org/1999/xlink">C</sub> = 10 mA/mum...
We demonstrate InP/GaAsSb/InP double heterojunction bipolar transistors (HBTs) fabricated in a low-temperature planarization process based on spin-on Teflon amorphous fluoropolymer interlevel dielectric with ε <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> = 1.9 and low dissipation factor. Devices 0.3-μm-wide emitters show excellent junction characteristics, cutoff frequencies f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 362 GHz...
We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies around 530 GHz simultaneous current above 350 GHz. Extrinsic collector capacitance is effectively reduced transfer-substrate In combination high breakdown voltage heterobipolar transistor structure 5 V, this process amenable to analog...
We report a "Type-II" metal-organic chemical vapor deposition (MOCVD)-grown compositionally graded quaternary base InP/GaInAsSb/InP double heterojunction bipolar transistor (DHBT) with simultaneous cutoff frequencies f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> = 547/784 GHz. Compositional grading of the As/In mole fractions enables stronger quasi-electric fields in and favors...
We report the realization of 0.3-μm emitter InP/GaAsSb/InP DHBTs with cutoff frequencies <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> = 365 GHz and xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> 501 GHz. Our devices were implemented a 15-nm C-doped graded base 125-nm InP collector feature peak current gain β 35, sheet resistance xmlns:xlink="http://www.w3.org/1999/xlink">R</i>...
This letter presents a 1 to >110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar transistor technology. The HBT cells are realized with inductive peaking at the output and match phase delay between individual stages. collector bias is slightly below value for maximum current gain. allows frequency-invariant high-output power characteristic flat group delay. exhibits gain of 13 dB measured bandwidth 1-110 GHz uniform...
We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-side on either 20-nm-thick graded GaAsSb- or GaInAsSb-base layers. A measured record saturated output power <italic...
A Pt/Ti/Pt/Au gate electrode stack is commonly used in AlInAs/GaInAs/InP high electron mobility transistors due to the Schottky barrier height of Pt on AlInAs and fact that can be controllably diffused through semiconductor layers thereby enabling vertical scaling. We show here Pt-AlInAs reaction not only controlled by annealing time temperature-the ambient thermal ramp rate also affect diffusion underlying impact DC RF device performance. Following metal deposition, one process split was...
We report uniform Type-II GaInAsSb/InP UTC-PDs, and compare their performance to devices fabricated with GaAsSb graded (composition doping) absorbers of the same thickness. The quaternary UTC-PDs show a transit limited bandwidth 274 GHz in contrast 107 185 for absorber UTC-PDs. Because ternary only differ material, findings conclusively demonstrate enhanced transport GaInAsSb. Performance comparison GaInAs-based from literature suggest that GaInAsSb is superior material λ = 1.55 μm...
Type-II InP/GaInAsSb-based double heterojunction bipolar transistors (DHBTs) with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> =636 GHz and a simultaneous xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =424 were realized 20-nm-thick compositionally uniform quaternary GaInAsSb base 125-nm InP collector. The alloy exhibits superior electron hole transport properties compared GaAsSb, resulting in improved device performance....
Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of 621 GHz and a simultaneous xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 428 are demonstrated. A DC peak current gain β = 19 common-emitter breakdown voltage BV xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> =5 V measured for 0.2 × 4.4-μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>...
GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To date, the influence InAs inset design details on transistor performance has not been parametrized literature. We present a systematic study effects channel thickness characteristics and cutoff frequencies versus temperature, noise at 300 K. The epitaxial layer structures considered here incorporate 2 to 5-nm insets fixed total thickness....
A multiscale technology computer-aided design (TCAD) simulation methodology is presented to calculate the intrinsic transit time of InP double heterojunction bipolar transistors (DHBTs). 2-D hydrodynamic (HD) simulator employed produce dc characteristics and electrostatic potentials selected devices. Utilizing cuts obtained potential profiles as inputs, a 1-D full-band, atomistic quantum transport (QT) solver then deployed determine ballistic electronic properties these components. The times...
Impact ionization negatively affects transistor noise properties at low and mm-wave frequencies. We show that composite InAs/GaInAs channels with thin InP sub-channels can be engineered to greatly suppress impact achieve improved while maintaining excellent HEMTs cutoff frequencies (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> > 410/660 GHz L...
In this paper, we report on the design, optimisation and electrical measurements of a PAM-4 DAC-driver fabricated in 0.7-μm InP/GaAsSb DHBT technology, with capability to directly drive an electro-optical modulator. Circuit mode show high diagram quality at 90 GBaud (180 Gb/s) record 5.5–V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</inf> differential output swing. An over 12-dB gain control is shown. Moreover, 3.35-V swing obtained 112...