Vincenzo d’Alessandro

ORCID: 0000-0003-1426-371X
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Research Areas
  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Radio Frequency Integrated Circuit Design
  • Semiconductor materials and devices
  • Electromagnetic Compatibility and Noise Suppression
  • Photovoltaic System Optimization Techniques
  • Thermal properties of materials
  • Electrostatic Discharge in Electronics
  • Model Reduction and Neural Networks
  • Silicon and Solar Cell Technologies
  • solar cell performance optimization
  • Heat Transfer and Optimization
  • 3D IC and TSV technologies
  • Solar Thermal and Photovoltaic Systems
  • Electronic Packaging and Soldering Technologies
  • Magnetic Properties and Applications
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and interfaces
  • Advanced DC-DC Converters
  • Photonic and Optical Devices
  • Low-power high-performance VLSI design
  • Induction Heating and Inverter Technology
  • Solar Radiation and Photovoltaics
  • Advanced Battery Technologies Research
  • Electromagnetic Simulation and Numerical Methods

Federico II University Hospital
2016-2025

University of Naples Federico II
2016-2025

Politecnico di Milano
2009-2023

Information Technology University
2013-2021

Ingegneria dei Trasporti (Italy)
2014-2019

Istituti di Ricovero e Cura a Carattere Scientifico
2005

Casa Sollievo della Sofferenza
2005

In this paper, an innovative sensor suited to perform real-time measurements of operating voltage and current, open-circuit voltage, short-circuit current string-connected photovoltaic (PV) panels is presented. An effective disconnection system ensures that the does not affect behavior string during measurement phase offers many benefits like automatic detection bypass events; moreover, require additional cables thanks a wireless communication power supply section based on energy harvesting....

10.1109/jphotov.2015.2484961 article EN IEEE Journal of Photovoltaics 2015-10-20

This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave THz applications. Process modeling status challenges are reviewed. The topics of thermal substrate effects, reliability, HF measurements also discussed.

10.1109/jproc.2017.2669087 article EN Proceedings of the IEEE 2017-03-16

This work describes a Fast novel thermal analysis simulation tool for integrated circuits (FANTASTIC), which is fully automated and relies on an enhanced version of the Multi-Point Moment Matching algorithm. The provides equivalent network suitable use in SPICE-like circuit simulators to perform efficient electrothermal analyses. FANTASTIC requires much less CPU time memory storage compared commercial simulators. behavior state-of-the-art four-finger GaAs HBT investigated as case-study.

10.1109/therminic.2014.6972507 article EN 2014-09-01

Failure mechanisms during short-circuit conditions of Silicon Carbide Power MOSFETs are analysed in this work, and a possible theoretical explanation is provided. Insight into the physics involved such processes was inferred through experimental numerical analyses. The TCAD structure used for electro-thermal simulations calibrated to fit I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> -V...

10.1109/ispsd.2015.7123460 article EN 2015-05-01

This paper presents an efficient circuit-based approach for the nonlinear dynamic electrothermal simulation of power devices and systems subject to radical self-heating. The strategy relies on synthesis a compact thermal network extracted from finite-element model by novel model-order reduction method requiring computational time orders magnitude lower than conventional techniques. Unlike commonly employed approaches, proposed allows reconstructing whole evolution temperature field in all...

10.1109/tpel.2015.2494500 article EN IEEE Transactions on Power Electronics 2015-10-22

In the rapidly evolving field of solar energy, Photovoltaic (PV) manufacturers are constantly challenged by degradation PV modules due to localized overheating, commonly known as hotspots. This issue not only reduce efficiency panels but, in severe cases, can lead irreversible damage, malfunctioning, and even fire hazards. Addressing this critical challenge, our research introduces an innovative electronic device designed effectively mitigate pioneering solution consists a novel combination...

10.1016/j.ijleo.2024.171627 article EN cc-by Optik 2024-01-21

This paper presents a novel bypass approach for photovoltaic panels relying on bipolar transistor operated in saturation, the activation of which is handled automatically by circuit comprising pair MOS transistors only. The functioning principle proposed system explained and improvements terms reliability bypassed subpanel power produced string comparison with traditional diode-based scheme are quantified. analysis corroborated dc/transient measurements tailored PSPICE simulations.

10.1109/jphotov.2013.2282736 article EN IEEE Journal of Photovoltaics 2013-10-16

The article investigates the detrimental effect of nonuniform and uniform crack distributions over a solar cell in terms open-circuit voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${{\bm{V}}_{{{\bf oc}}}}$</tex-math></inline-formula> ), short-circuit current density notation="LaTeX">${{\bm{J}}_{{{\bf sc}}}}$</tex-math></inline-formula> output power, latter under wide range irradiance conditions....

10.1109/tii.2021.3088721 article EN IEEE Transactions on Industrial Informatics 2021-06-11

A novel matrix reduction method for the efficient and automatic construction of boundary condition independent dynamic compact thermal models having a chosen accuracy, is proposed. The implemented in code which allows constructing any multi-die package modeled within 3-D commercial mesher. proposed approach has many advantages with respect to previous approaches terms robustness, efficiency, applicability. validated through analysis dual-flat no-leads 12-leads package.

10.1109/therminic.2015.7389596 article EN 2015-09-01

This paper presents a computationally efficient 3-D simulation approach for the dynamic electrothermal analysis of SiC power MOSFETs. The strategy relies on circuit representation whole device, where feedback is enabled through an equivalent electrical network, and elementary device cell described by novel behavioral model accounting non-intuitive temperature dependences key physical parameters.

10.1109/ispsd.2014.6856032 article EN 2014-06-01

This article presents the detailed thermal analysis and modeling of multichip power modules (PMs). For first time, a fair comparison between widespread single-sided cooled (SSC) technology innovative double-sided (DSC) one is presented. The latter solution emerges among all packaging techniques due to its improved electrical performances mechanical reliability. investigation carried out using 3-D finite-element method simulations automated by an in-house routine. PMs under test are...

10.1109/tcpmt.2020.3007146 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2020-07-06

In this work, we propose a simulation tool designed for the analysis and optimization of bifacial photovoltaic (PV) modules, which are currently under spotlight in renewable energy scenario. The is conceived to support researchers engineers by providing fast accurate predictions PV module yield various operating environmental conditions. For chosen geographical site, impact orientation, tilt, albedo, sky conditions, ambient temperature, so on can be effortlessly determined. case...

10.3390/solar5010002 article EN cc-by Solar 2025-01-16

This paper offers an in-depth overview of the trade-off between thermal performance and assembly cost in state-of-the-art power modules (PMs). Since development PM technological process is still its infancy, PMs are typically designed prototyped order to evaluate their electrical/thermal characteristics. The numerical investigation conducted here aims analyze impact design choices (e.g., materials dimensions, cooling system efficiency) on resistance (RTH, [K/W]), time constant (τ, [s]),...

10.3390/en18071665 article EN cc-by Energies 2025-03-27

Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., resistance R/sub TH/, critical temperature T/sub crit/ and current J/sub C,crit/, are established verified by measurements on silicon-on-glass NPNs. A minimum junction increase above ambient due to selfheating that can cause breakdown is identified be as low 10-20/spl deg/C. The influence of internal external series resistances explicitly included C,crit/ becomes clear. use...

10.1109/ted.2003.820654 article EN IEEE Transactions on Electron Devices 2004-01-01

A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction the small-signal thermal impedance network bipolar devices circuits. The procedure demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling mutual coupling obtained by fitting a multipole rational complex to measured data presented.

10.1109/jssc.2004.833766 article EN IEEE Journal of Solid-State Circuits 2004-09-28
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