A5024136451- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Photonic and Optical Devices
- Microwave Engineering and Waveguides
- Semiconductor Quantum Structures and Devices
- 3D IC and TSV technologies
- Advancements in PLL and VCO Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Electromagnetic Compatibility and Noise Suppression
- Blind Source Separation Techniques
- Microwave and Dielectric Measurement Techniques
- Analog and Mixed-Signal Circuit Design
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- Speech and Audio Processing
- Millimeter-Wave Propagation and Modeling
- Silicon and Solar Cell Technologies
- Spectroscopy and Chemometric Analyses
- Semiconductor Lasers and Optical Devices
- GaN-based semiconductor devices and materials
- Advanced Power Amplifier Design
- Superconducting and THz Device Technology
- Control Systems and Identification
Centre National de la Recherche Scientifique
2012-2025
Université Grenoble Alpes
2025
STMicroelectronics (France)
2015-2024
STMicroelectronics (Czechia)
2006-2024
Département de Chimie Moléculaire
2024
Département de Pharmacochimie Moléculaire
2024
STMicroelectronics (India)
2013-2023
Hospices Civils de Lyon
2023
Hôpital Louis Pradel
2023
Institut Polytechnique de Bordeaux
2012-2017
A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining results various 1-D, 2-D, and 3-D computer-aided design (TCAD) simulation tools with geometry scalable compact modeling. The latter, including all known parasitic effects, enables accurate determination figures merit both devices selected benchmark circuits. defines five major nodes maximum oscillation frequency a typical...
This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The features Low Power (LP) and General Purpose (GP) CMOS devices 0.45 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> 6T-SRAM bit cell. High Speed (HS) HBT exhibits 320 GHz f <sub xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 370 xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> associated with CML ring...
This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including high-speed (230/280 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> ) and medium voltage HBT, thick-copper back-end designed for high performance transmission lines inductors, 2 fF/μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> high-linearity MIM...
The paper presents design optimization strategies and a comparison of the performance SiGe HBT fundamental push-push Colpitts Colpitts-Clapp voltage-controlled oscillators (VCOs), with without doublers buffers, as possible solutions for efficient milliwatt-level, low-noise signal sources at submillimeter-wave frequencies. frequency VCO covers 12% tuning range between 218 246 GHz (the highest HBTs) up to -3.6-dBm output power 0.8% efficiency. 300-GHz source, consisting followed by buffer...
This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave THz applications. Process modeling status challenges are reviewed. The topics of thermal substrate effects, reliability, HF measurements also discussed.
This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The high performance technology platforms are presented, have special advantages for addressing applications submillimeter-wave and range. status of process is reviewed integration challenges examined. A detailed discussion on millimeter-wave characterization modeling given with emphasis harmonic distortion analysis, power noise figure...
This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT BiCMOS technologies. The includes 123-mW single-chip receiver with 24-dB gain an IP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> xmlns:xlink="http://www.w3.org/1999/xlink">dB</sub> of -21.7 dBm at 76-GHz local oscillator (LO) RF, 4.8-dB double-sideband noise figure LO 1-GHz IF, worst case -98.5 dBc/Hz phase 1-MHz...
Two D-band transceivers, with and without amplifiers static frequency divider, transmitting simultaneously in the 80-GHz 160-GHz bands, are fabricated SiGe HBT technology. The transceivers feature an quadrature Colpitts oscillator differential outputs at 160 GHz, a double-balanced Gilbert-cell mixer, 170-GHz broadband 70-GHz to 180-GHz vertically stacked transformers for single-ended conversion. For transceiver which marks highest level of integration above 100 GHz silicon, peak...
This paper summarizes the technological developments carried out on SiGe HBTs in frame of European project DOTFIVE. The architectures different partners and their performances are presented discussed showing that objectives have been met.
In this paper, we report the first demonstration of CMOS-integrated racetrack memory. The devices measured are complete memory cells integrated into back end line IBM 90 nm CMOS. We show good integration yield across 200 mm wafers. With magnetic field-assist, demonstrate current-driven read and write operations on within a 256-cell array.
The overall purpose of this paper (including Part I, in issue) is the prediction ultimate electrical high-frequency performance potential for SiGeC heterojunction bipolar transistors under constraints practical applications. This goal achieved by utilizing most advanced device simulation tools with parameters calibrated to existing experimental results. I outlines scaling procedure and then focuses on vertically scaled structure. According isothermal simulation, "ultimate" doping profile...
A D-band SiGe HBT total power radiometer is reported with a peak responsivity of 28 MV/W, noise equivalent (NEP) 14-18 fW/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> , and temperature resolution better than 0.35 K for an integration time 3.125 ms. The 1/f corner the lower 200 Hz. Fabricated in developmental technology 270-GHz f <sub xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 330-GHz/max, it includes five-stage low-noise...
This paper reviews the advantages of SiGe BiCMOS technologies and their applications in millimeterwave to terahertz domains. The state-of-the-art covering both Si/SiGe HBTs CMOS nodes is shown. Future perspectives related main challenges are discussed with a focus on ongoing European research activities through presentation TARANTO project, whose objective help developing 600 GHz \pmbfMAX nanoscale platforms.
This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for Doppler radar and millimeter-wave imaging, particularly within automotive band of 77-81 GHz. A 1.3 mm times 0.9 86-96 receiver is also presented. The transceiver, a 130 nm technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> 230/300 GHz,...
This paper describes a single-chip, 70-80 GHz wireless transceiver utilizing direct mm-wave QPSK modulator. The was fabricated in 130 nm SiGe BiCMOS technology and can operate at data rates excess of 18 Gb/s. peak gain the zero-IF receiver is 50 dB, double sideband noise figure remains below 7 while 3-dB receive-chain bandwidth extends from DC to over 6 GHz. differential transmitter achieves maximum output power +9 dBm. total consumption 1.9 mm × 1.1 1.2 W 1.5, 2.5 3.3 V supplies, including...
A 234-261-GHz signal source with record 7.2-dBm output power at 240 GHz and -105 dBc/Hz phase noise 10-MHz offset is reported. Fabricated in a production 55-nm SiGe BiCMOS process HBT f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of 330/350 GHz, the circuit includes 120-GHz fundamental frequency VCO 1.2-V AMOS varactors, broadband MOS-HBT cascode LO tree driving divide-by-128...
Abstract This paper presents for the first time implementation of an Si/SiGe heterojunction bipolar phototransistor (HPT) into STMicroelectronics BiCMOS technology together with development hydrodynamical model that fits in a trustable manner measured opto-microwave performance. The developed relies on precise topology analysis HPT and efficient optical absorption coefficient model. It is key to predict optimization required HPT. Simulation results responsivities 0.92 A/W bandwidth 1.55 GHz...
For about two decades, numerous methods have been developed to blindly identify overdetermined (P/spl les/N) mixtures of P statistically independent narrowband (NB) sources received by an array N sensors. These exploit the information contained in second-order (SO), fourth-order (FO) or both SO and FO statistics data. However, practical situations, probability receiving more than sensors increases with reception bandwidth use blind identification (BI) able process underdetermined sources,...
A single-chip transceiver with on-die transmit and receive antennas, Rx Tx amplifiers, 165-GHz oscillator static frequency divider is reported in a SiGe HBT process f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of 270 GHz/340 GHz. This marks the highest silicon level functional integration above 100 GHz any semiconductor technology. The downconversion gain peaks at -5 dB power...
This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz 4 Gb/s through air using a single-chip silicon transceiver GHz. The transceiver, which consists 140-GHz push-push VCO with static divide-by-64 chain, amplitude modulator, LO amplifier, fundamental frequency mixer, LNA, variable gain IF has downconversion 30 dB noise figure 12.3 dB. It is fabricated in 130-nm SiGe BiCMOS technology, occupies an area 1.44 mm <sup...
This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> . The technological optimization strategy is discussed and electrical characteristics are presented. A record peak 423 (f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> = 273 GHz) demonstrated in technology.
The overall purpose of this paper is the prediction ultimate electrical high-frequency performance potential for SiGeC HBTs under constraints practical applications.This goal achieved by utilizing advanced device simulation tools with parameters calibrated to experimental results most existing technologies.In addition, detailed electrostatic and electrothermal simulations are performed determining parasitic capacitances, temperature increase, safe operating area aggressively scaled...
This paper describes the design considerations and performance of highest frequency phase-locked loop (PLL) reported to date. The PLL was fabricated in a 0.13- <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\hbox{m}}$</tex> </formula> SiGe BiCMOS process integrates on single die: fundamental-frequency 86–92 GHz Colpitts voltage-controlled oscillator (VCO), differential push-push 160-GHz VCO with...