A5102863144- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Organic Light-Emitting Diodes Research
- Organic Electronics and Photovoltaics
- Cosmology and Gravitation Theories
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Galaxies: Formation, Evolution, Phenomena
- Thin-Film Transistor Technologies
- Dark Matter and Cosmic Phenomena
- Inertial Sensor and Navigation
- Radio Astronomy Observations and Technology
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Optic Sensors
- Structural Engineering and Vibration Analysis
- Superconducting and THz Device Technology
- Railway Engineering and Dynamics
- Particle physics theoretical and experimental studies
- Conducting polymers and applications
- Astrophysics and Cosmic Phenomena
- Target Tracking and Data Fusion in Sensor Networks
- Geotechnical Engineering and Underground Structures
- Advanced Power Amplifier Design
- Integrated Circuits and Semiconductor Failure Analysis
- Geophysics and Gravity Measurements
Hefei University
2024
University of Chicago
2019-2024
Huangshan University
2020-2024
Air Force Communication NCO Academy
2023
ETH Zurich
2016-2021
Lincoln University
2021
BOE Technology Group (China)
2018-2020
Shenyang Jianzhu University
2018
Jiangnan University
2016
Beihang University
2012-2015
We present a sample-variance-limited measurement of the temperature power spectrum ($TT$) cosmic microwave background using observations $\ensuremath{\sim}1500\text{ }\text{ }{\mathrm{deg}}^{2}$ field made by SPT-3G in 2018. report multifrequency measurements at 95, 150, and 220 GHz covering angular multipole range $750\ensuremath{\le}\ensuremath{\ell}<3000$. combine this $TT$ with published polarization from 2018 observing season update their associated covariance matrix to complete...
The precision of star point location is significant to identify the map and acquire aircraft attitude for sensors. Under dynamic conditions, images are not only corrupted by various noises, but also blurred due angular rate sensor. According different rates under a novel method proposed in this article, which includes denoising based on adaptive wavelet threshold restoration large rate. adopted image when range. Then, mathematical model motion blur deduced so as restore Simulation results...
The development of InP/GaAsSb DHBTs is reviewed and contextualized with respect to other III-V high-speed technologies. Pertinent material properties challenges in the proper assessment f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Max</sub> are discussed. An iterative de-embedding algorithm involving no additional test structures/measurements shown yield correct fMAx from unilateral gain data for both HEMTs.
Ultralight axionlike particles (ALPs) are compelling dark matter candidates because of their potential to resolve small-scale discrepancies between $\Lambda$CDM predictions and cosmological observations. Axion-photon coupling induces a polarization rotation in linearly polarized photons traveling through an ALP field; thus, as the local field oscillates time, distant static sources will appear oscillate with frequency proportional mass. We use observations cosmic microwave background from...
Abstract We forecast constraints on cosmological parameters enabled by three surveys conducted with SPT-3G, the third-generation camera South Pole Telescope. The cover separate regions of 1500, 2650, and 6000 deg 2 to different depths, in total observing 25% sky. These will be measured white noise levels roughly 2.5, 9, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mn>12</mml:mn> <mml:mspace width="0.33em"/> <mml:mi>μ</mml:mi> <mml:mi...
Abstract We present a flare star catalog from 4 yr of nontargeted millimeter-wave survey data the South Pole Telescope (SPT). The were taken with SPT-3G camera and cover 1500 deg 2 region sky 20 h 40 m 0 s to 3 in right ascension −42° −70° declination. This was observed on nearly daily cadence 2019 2022 chosen avoid plane galaxy. A short-duration transient search this yields 111 flaring events 66 stars, increasing number both detected stars by an order magnitude previous release. provide...
We report a "Type-II" metal-organic chemical vapor deposition (MOCVD)-grown compositionally graded quaternary base InP/GaInAsSb/InP double heterojunction bipolar transistor (DHBT) with simultaneous cutoff frequencies f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> = 547/784 GHz. Compositional grading of the As/In mole fractions enables stronger quasi-electric fields in and favors...
We fabricate an inverted bottom-emission organic light emitting diode (IBOLED) employing two n-doped layers, i.e., 5 nm lithium carbonate doped PTCDA (1:2 Li2CO3: PTCDA) with Li2CO3 BCP (1:4 BCP) on top, where and stand for 3, 4, 9, 10 perylenetetracarboxylic dianhydride bathcuporine, respectively. Compared to the IBOED using a layer of 1:4 BCP, one utilizing two-layer combination 5nm 1:2 shows decreasing operation voltage thereby increasing power efficiency, mainly attributed higher...
Abstract High angular resolution cosmic microwave background experiments provide a unique opportunity to conduct survey of time-variable sources at millimeter wavelengths, population that has primarily been understood through follow-up measurements detections in other bands. Here we report the first results an astronomical transient with South Pole Telescope (SPT) using SPT-3G camera observe 1500 deg 2 southern sky. The observations took place from 2020 March November three bands centered...
Two organic light-emitting diodes (OLEDs) using the hole current structures of 2:1 NPB:MoO3 5 nm/2:1 CBP:MoO3 nm/CBP and 10 have been fabricated, where NPB CBP stand for N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine 4,4'-N,N'-dicarbazole-biphenyl, respectively. Despite that is proven to be more resistive than via comparing I–V characteristics hole-only devices, former OLED two p-doped layers shows significantly improved over latter one a single layer, mostly because whole barrier...
We investigate the bias, temperature, and frequency dependence of two III–V double heterojunction bipolar transistors technologies based on InGaAs/InP GaAsSb/InP processes, using a HiCuM/L2 compact model-based multigeometry scalable parameter extraction methodology. Very good agreement between model simulations experimental data is demonstrated. Transistor currents junction capacitances show very scaling, thereby allowing separation intrinsic peripheral effects. Prediction future HBT...
We report uniform Type-II GaInAsSb/InP UTC-PDs, and compare their performance to devices fabricated with GaAsSb graded (composition doping) absorbers of the same thickness. The quaternary UTC-PDs show a transit limited bandwidth 274 GHz in contrast 107 185 for absorber UTC-PDs. Because ternary only differ material, findings conclusively demonstrate enhanced transport GaInAsSb. Performance comparison GaInAs-based from literature suggest that GaInAsSb is superior material λ = 1.55 μm...
A multiscale technology computer-aided design (TCAD) simulation methodology is presented to calculate the intrinsic transit time of InP double heterojunction bipolar transistors (DHBTs). 2-D hydrodynamic (HD) simulator employed produce dc characteristics and electrostatic potentials selected devices. Utilizing cuts obtained potential profiles as inputs, a 1-D full-band, atomistic quantum transport (QT) solver then deployed determine ballistic electronic properties these components. The times...
Abstract This paper explores the seismic damping mechanism and performance of CRTS III slab ballastless track on an isolation system extradosed cable-stayed bridge during rare earthquakes. It serves as a guide for designing tracks high-speed railway bridges. Using case study, we established Midas finite element model to optimize plate parameters by adjusting fastener stiffness joint length. The optimization process method can be applied reference similar designs. research findings reveal...
Abstract Inverted bottom‐emission organic light emitting diodes (IBOLEDs) using MoO 3 for both hole and electron injections were fabricated. The IBOLED 10 nm injection 5 /5 Li 2 CO doped bathocuproine (Li :BCP, 1:4 in mass) showed nearly same I – V characteristics as the reference device utilizing :BCP injection, whereas, former provided increased current efficiencies than latter device, a result of relieved diffusion n‐typed dopant into emissive layer device. We provide an efficient,...
We present two prescriptions for broadband ($ {\sim} 77 - 252\;{\rm GHz} $), millimeter-wave antireflection coatings cryogenic, sintered polycrystalline aluminum oxide optics: one large-format (700 mm diameter) planar and plano-convex elements, the other densely packed arrays of quasi-optical elements-in our case, 5 diameter half-spheres (called "lenslets"). The comprise three layers commercially available, polytetrafluoroethylene-based, dielectric sheet material. lenslet coating is molded...
The scaling behavior of Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) is studied and a 10 μm long emitter with cutoff frequencies fT/fMAX=463/829 GHz demonstrated. Such high fMAX was made possible by aggressive lateral the base-collector (BC) mesa which helps to reduce extrinsic BC capacitance. limitations in furthering for these devices are examined. present show highest any HBT, indicating excellent properties DHBTs.
The present work characterizes the 94 GHz class-A large-signal load-pull performance of mm-wave InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with different emitter lengths LE. When matched for maximum power, a 10.3 dBm (1.09 mW/μm) output is realized in 10 μm transistor 24.5 % power-added efficiency (PAE). PAE, 30% Class-A PAE achieved 7.5 long device, simultaneous power and gain 9.0 5.9 dB. contours exhibit combination good high wide range load impedances vicinity 50 Ohm....
This article reports a detailed approach toward optimization of on-wafer thru-reflect-line (TRL) calibration structures for submillimeter-wave characterization state-of-the-art indium-phosphide (InP) technology, validated by thorough experimentation and electromagnetic (EM) simulation. The limitations the existing RF test high-frequency measurements beyond 110 GHz are analyzed through EM Using an procedure based on raw simulated data, TRL were developed fabricated in subsequent run this...
Double heterojunction bipolar transistors (DHBTs) are intended to extend the breakdown voltage beyond what is possible in single transistors, ideally without sacrificing frequency performance. InP/GaAsSb DHBTs offer most favorable cutoff versus tradeoff among all transistors. It has been shown that addition of Indium a GaAsSb base further increases current gain frequencies fT. In present article, we compare ternary (GaAsSb) and quaternary (GaInAsSb) graded fabricated side-by-side shed light...
A set of top‐emitting OLED with wide‐color gamut and high‐efficiency were successfully fabricated by using 3‐stacked B/RG/B tandem structure color filter. Optimization MgAg Indium Zinc Oxide (IZO) composite made the devices IZO served as capping layer almost identical to conventional organic layer. On whole, they exhibited 90% coverage ultra‐high definition display standard BT.2020, while maintaining high efficiency red 15.5 cd/A, green 26.6 blue 3.5 cd/A. The impressive properties make them...
The intrinsic performance of “type-II” InP/GaAsSb double heterojunction bipolar transistors (DHBTs) toward and beyond THz is predicted analyzed based on a multi-scale technology computer aided design modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1D full-band, atomistic quantum transport calculations to shed light future DHBT generations whose dimensions decreased step-by-step, starting from the current device...