A5112077100- Photonic and Optical Devices
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Advanced Photonic Communication Systems
- Semiconductor Quantum Structures and Devices
- Laser-Matter Interactions and Applications
- Advanced Optical Network Technologies
- Neural Networks and Reservoir Computing
- Magneto-Optical Properties and Applications
- Quantum optics and atomic interactions
- Photonic Crystals and Applications
- Spectroscopy and Laser Applications
- Solid State Laser Technologies
- Advanced Fiber Optic Sensors
- Semiconductor materials and devices
- Photonic Crystal and Fiber Optics
- Advanced Optical Sensing Technologies
- Advanced MEMS and NEMS Technologies
- Nonlinear Dynamics and Pattern Formation
- Mechanical and Optical Resonators
- Digital Media and Visual Art
- Advanced Antenna and Metasurface Technologies
- Heat Transfer and Boiling Studies
- Software-Defined Networks and 5G
CEA LETI
2011-2024
III V Lab
2015-2024
Thales (France)
2012-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2014-2024
Nokia (France)
2016-2024
Macau University of Science and Technology
2024
CEA Paris-Saclay
2020
Alcatel Lucent (Germany)
2003-2017
Thales (United Kingdom)
2017
Nokia (Finland)
2017
Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting groundwork for implementation complex on-chip optical systems that go beyond single device performance. Recent advances on field are expected to impact next generation communications attain low power, high efficiency and portable solutions. To accomplish this aim, intense research hybrid lasers, modulators photodetectors is being done implement modules photonic...
We report on ultrafast excitonic nonlinearities in ion-implanted InGaAs/InAlAs multiple quantum wells. find that irradiation with energetic O+ and Ni+ ions can reduce the carrier lifetime from 1.6 ns down to 1.7 ps without significantly altering absorption properties, making efficient fast saturable absorbers 1.3–1.5 μm wavelength range.
Several applications are pushing the development of high performance mode-locked lasers: generation short pulses for extremely bit rate transmission at 100 Gb/s and beyond, all-optical clock recovery 40 millimeter wave signals through mode-beating on a speed photodiode, optical sampling analog-to-digital conversion, wavelength-division-multiplexing channels. This paper will report new advances in InP-based quantum dash lasers, which largely surpass their bulk or well counterparts terms...
Thermal management has traditionally been relegated to the last step in design process. However, with exponential growth data traffic leading ever-greater levels of component integration and ever-higher energy consumption, thermal is rapidly becoming one most critical areas research within ICT industry. Given vast use optics for efficient transmission high-speed data, this paper focuses on a new solution cooling components pluggable optical modules. Thermally Integrated Photonics Systems...
Multimode lasers have a very complex dynamics, as expected when oscillators are nonlinearly coupled. Order emerges the modes lock together; in this case coherent superposition of results into periodic train pulses or nearly constant power output with linearly chirped frequency, for instance. The first is promoted by saturable absorber, an equivalent physical mechanism, while latter connected to more subtle conditions, such fast dynamics gain. Here we consider multimode semiconductor laser...
We report on comb generation at 1.55 mum using a mode-locked quantum-dash-based laser. A flat optical spectrum with ~10-nm width consisting of eight 100-GHz-spaced channels is demonstrated. Separate error-free transmission each channel achieved 10 Gb/s over 50-km-long single-mode fiber. Compared to an ideal external cavity continuous-wave laser, penalty only 1.5 dB measured for filtered channel. This attributed the higher relative intensity noise level mode.
Recent advances on hybrid III–V/Si lasers and semiconductor optical amplifiers using wafer bonding are reported. Hybrid exhibit 28 dB internal gain, 9 dBm saturation power in the output silicon waveguide, 10–11 of noise factor. Moreover, as gates, we demonstrate a successful switching operation packet/burst without penalties compared to classical amplifiers. The allow single mode wavelength tunability over 30 nm by exploiting ring resonators thermo-optical effect. Moreover transmission 60 km...
We investigate wavelength tunable 56-Gb/s differential quaternary phase-shift keying (DQPSK) systems using comb generation in a quantum-dash mode-locked laser for wavelength-division-multiple access (WDM)-based broadcast application. present relative intensity noise and bit-error-rate measurements each mode. demonstrate error-free operation over nine WDM channels with 100-GHz spacing.
This paper summarizes recent advances of integrated hybrid InP/silicon-on-insulator lasers and transmitters based on a wafer bonding technique. First, directly modulated III-V/Si tunable with an external ring resonator filter are demonstrated, enabling the improvement dynamic extinction ratio. An efficient is then reported mainly for access applications. Finally, results distributed feedback laser electro-absorption modulator at 1.3 μm presented, showing capability operation up to...
We report for the first time on systematic measurement of timing jitter 40-GHz self-pulsating Fabry-Perot laser based InAs/InP quantum dashes emitting at 1.55 microm. Two different methods, one optical cross-correlation and electrical spectrum sideband integration are used show a good agreement, yielding 0.86 ps in 1 MHz---20 MHz frequency range with potential 280 fs optimized driving conditions. Amplitude noise high-frequency contributions also discussed.
Error-free transmission over 50km single mode fiber of 8 WDM ITU channels with 100GHz channel spacing is demonstrated at 10Gbit/s by using comb generation in a quantum dash mode-locked laser.
We experimentally investigate the operation of a cost-effective wavelength-division-multiplexed passive optical network (WDM-PON) based on wavelength-locked Fabry-Pérot laser diodes (FP-LDs). A single quantum-dash passively mode-locked (QD-MLL) is combined with an arrayed waveguide grating in WDM-PON architecture to provide low-noise, coherent multiwavelength seeding source injection-lock FP-LDs for both downstream and upstream. The results show that QD-MLL-injected FP-LD has same...
The potential of a quantum dash based modelocked laser to achieve low phase noise oscillator by means an optical self-injection loop is demonstrated. A as −105 dBc/Hz at offset frequency 100 kHz has been achieved with such configuration.
Bit-error-rate assessment of a multi-rate all-optical clock recovery (OCR) based on narrow linewidth mode-locked quantum-dot (QD) Fabry-Perot laser is presented in this letter. OCR has been achieved without external feedback. We use QD semiconductor designed for 40-GHz extraction. then present performance with 40-, 80-, and 160-Gb/s input data signal demonstrate that obtained thanks to subharmonic locking process. Results are through penalty measurement using an original characterization...
Single section quantum dash (QDash) mode locked lasers (MLL) can provide a flat and broadband optical frequency comb with low energy consumption, operational simplicity large-scale low-cost production possibilities. MLL longitudinal modes be employed as single carriers regular spectral spacing in dense wavelength division multiplexing (DWDM) link, making them promising components for next generation DWDM transceivers. However, individual of suffer from relatively high phase noise while...
We assess a new 2R regenerator based on microcavity saturable absorber and semiconductor optical amplifier. Cascadability is demonstrated the impact of regeneration span studied in 10-Gb/s two-path recirculating loop. A wavelength study demonstrates tunability device over 13 nm
We investigate experimentally all-optical clock recovery for return-to-zero (RZ) and nonreturn-to-zero (NRZ) differential phase-shift keying (DPSK) signals at 40 Gbits/s using a passively mode-locked quantum-dot Fabry-Perot (QD-FP) semiconductor laser. The QD-FP laser exhibits beat spectrum linewidth of 80 kHz, which enables recovered signal with root-mean-square timing jitter 160 fs the RZ-DPSK 240 NRZ-DPSK signal. is characterized different values input power optical signal-to-noise ratio.
A novel WDM-PON delivering 10-Gb/s downstream based on L-band loss-less reflective-amplified-modulator and 2.5-Gb/s upstream C-band injection-locked Fabry-Perot laser is experimentally demonstrated for 24 channels over 25-km, using quantum-dash mode-locked laser-based multiple-wavelengths seeding sources.
Integrated silicon photonics has emerged as a scalable optoelectronic platform to meet the demands for increased bandwidth in communication networks. However, integration introduces new thermal challenges achieving required system performance. Here we present design of micro thermoelectric temperature controller integrated around III-V-on-silicon hybrid waveguide. We briefly outline requirements ensure suitable laser performance long reach optical application on platform, namely an active...
We demonstrate a 16-channel, silicon-on-insulator, monolithic integrated slot-blocker. This silicon photonic circuit includes two arrayed waveguide gratings, 16 variable optical attenuators and vertical fiber couplers. successfully operate it with 56 Gb/s 80 QPSK packets.
This paper reports on all optical frequency down conversion clock recovery based Quantum-Dash Fabry-Perot mode-locked laser diode (QD-MLLD). A first section is dedicated to the generation of a tunable repetition rate pulse source QD-MLLD. The principle select three lines in QD-MLLD spectrum with filtering technique; spacing are properly chosen generate desired rate. In this paper, 427 GHz was reached and observed an sampling oscilloscope. Moreover, encoded 170.8 characterized showing no...
Abstract The high-speed dynamics of a hybrid distributed feedback semiconductor laser heterogeneously integrated onto silicon is experimentally investigated in the presence external optical feedback. fabrication relies on proper modal engineering which light generated III–V material and stored low-loss region order to substantially enhance quality factor cavity resonator. In this work, found be insensitive parasitic reflections leading 10 Gbps floor-free transmission with power penalty no...
10Gb/s directly modulated tunable lasers, integrating chirp management ring resonators, have been designed and fabricated using wafer bonding. Using such a device, we demonstrated error-free transmission over 50km single mode fiber.
Several all-optical switching devices based on quantum well microcavity structures have been studied in view of their possible use for regeneration telecommunication signals. Experiments and modeling show that the saturation energy is inversely proportional to a scaling factor describing enhancement intracavity intensity at Fabry-Perot resonance. As result approximately number wells device can be kept small by proper cavity design.