A5034058637- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Photorefractive and Nonlinear Optics
- Laser-Matter Interactions and Applications
- Optical Network Technologies
- Neural Networks and Reservoir Computing
- Diamond and Carbon-based Materials Research
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Semiconductor materials and devices
- Advanced Optical Sensing Technologies
- Solid State Laser Technologies
- Mechanical and Optical Resonators
- Advanced Fiber Optic Sensors
- Nonlinear Optical Materials Studies
- Plasmonic and Surface Plasmon Research
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- GaN-based semiconductor devices and materials
- Optical and Acousto-Optic Technologies
- Advanced Optical Imaging Technologies
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Quantum Information and Cryptography
- Spectroscopy and Quantum Chemical Studies
Ghent University
2015-2024
IMEC
2021-2024
Massachusetts Institute of Technology
2022-2023
Vassar College
2022
Ghent University Hospital
2022
École Polytechnique Fédérale de Lausanne
2014
École Normale Supérieure - PSL
2014
The high index contrast silicon-on-insulator platform is the dominant CMOS compatible for photonic integration. successful use of silicon chips in optical communication applications has now paved way new areas where can be applied. It already emerging as a competing technology sensing and spectroscopic applications. This increasing range photonics instigates an interest exploring materials, some drawbacks these applications, e.g., not transparent visible wavelength range. Silicon nitride...
Abstract Generating optical combs in a small form factor is of utmost importance for wide range applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode‐locked diode lasers provide with high conversion efficiency, while simultaneously allowing dense spectrum lines. In recent years, number integrated chip scale have been demonstrated. However, thus far these devices suffer from significant linear nonlinear losses the passive cavity, limiting attainable cavity size...
On-chip integration of optical comb sources is crucial in enabling their widespread use. Integrated photonic devices that can be mass-manufactured semiconductor processing facilities offer a solution for the realization miniaturized, robust, low-cost, and energy-efficient sources. Here, we review state art on-chip sources, applications, anticipated developments.
Mode-locked lasers find their use in a large number of applications, for instance, spectroscopic sensing, distance measurements, and optical communication. To enable widespread mode-locked lasers, on-chip integration is desired. In recent years, there have been multiple demonstrations monolithic III-V heterogeneous III-V-on-silicon lasers. However, the pulse energy, noise performance, stability these are limited by relatively high linear nonlinear waveguide loss, temperature sensitivity said...
Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused telecommunication wavelengths. Yet, unlock full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential serve applications such as biosensing, imaging, quantum photonics. Here, we report first, best our knowledge, microtransfer printed Si p-i-n photodiodes a commercially...
We demonstrate a III-V-on-silicon-nitride mode-locked laser through the heterogeneous integration of semiconductor optical amplifier on passive silicon-nitride cavity using technique micro-transfer printing. In initial phase our study, we focus optimizing lasing wavelength to be centered at 1550 nm. This optimization is achieved by conducting experiments with 27 lasers, each incorporating amplifiers featuring distinct multiple-quantum-well photoluminescence values. Subsequently present...
Advances in laser technology have driven discoveries atomic, molecular, and optical (AMO) physics emerging applications, from quantum computers with cold atoms or ions, to networks solid-state color centers. This progress is motivating the development of a new generation control systems that can manipulate light field high fidelity at wavelengths relevant for AMO applications. These are characterized by criteria: (C1) operation design wavelength choice visible (VIS) near-infrared (IR)...
Silicon nitride (SiN) is currently the most prominent CMOS-compatible platform for photonics at wavelengths <1 μm. However, realizing fast electro-optic (EO) modulators, key components of any integrated optics platform, remains challenging in SiN. Modulators based on plasma dispersion effect, as silicon, are not available. Despite fact that significant second-harmonic generation has been reported silicon-rich SiN, no efficient Pockels effect-based modulators have demonstrated. Here we...
We report the fabrication of artificial unidimensional crystals exhibiting an effective bulk second-order nonlinearity. The are created by cycling atomic layer deposition three dielectric materials such that resulting metamaterial is noncentrosymmetric in direction deposition. Characterization structures second-harmonic generation Maker-fringe measurements shows main component their nonlinear susceptibility tensor about 5 pm/V, which comparable to well-established and more than order...
Abstract The determination of the second-order susceptibility ( χ (2) ) thin film samples can be a delicate matter since well-established measurement methodologies such as Maker fringe technique are best suited for nonlinear materials with large thicknesses typically ranging from tens microns to several millimeters. Here we compare two different second-harmonic generation setups and corresponding that especially advantageous characterization. This exercise allows cross-checking obtained...
We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by reactive gas mixture in process. found six-fold enhancement between lowest highest second-order susceptibility, value approximately 5 pm/V most silicon-rich sample. Moreover, optical losses to be sufficiently small (below 6 dB/cm) for...
Advances in laser technology have driven discoveries atomic, molecular, and optical (AMO) physics emerging applications, from quantum computers with cold atoms or ions, to networks solid-state color centers. This progress is motivating the development of a new generation "programmable control" systems, characterized by criteria (C1) visible (VIS) near-infrared (IR) wavelength operation, (C2) large channel counts extensible beyond 1000s individually addressable atoms, (C3) high intensity...
Abstract Second‐order nonlinear optical processes enable a wide range of applications used in research and industry. The majority available second‐order devices however relies on bulk crystals with low nonlinearity. By exploiting the advancements made integrated optics, materials large nonlinearity can efficient small‐sized on‐chip at cost. Unfortunately, silicon nitride, mostly for photonics circuits exhibit negligible (χ (2) ) alternate have to be investigated. Lead zirconate titanate...
Heterogeneous integration of a pre-processed etched-facet GaAs multiple-quantum-well Fabry-Perot laser on silicon is shown through micro-transfer printing. Fiber-coupled output powers exceeding 3 mW at 789 nm are achieved with threshold current 60 mA.
A heterogeneously integrated III-V-on-silicon nitride mode-locked laser is demonstrated. The device fabricated by microtransfer printing an InP/InAlGaAs-based multiple-quantum-well coupon. dense comb with a 755 MHz repetition rate, 1 Hz ASE limited RF linewidth and 200 kHz optical achieved.
We demonstrate a heterogeneously integrated III-V-on-silicon-nitride mode-locked laser with 710 MHz repetition rate. A versatile two-step micro-transfer printing approach is employed to enable low-loss integration on commercial foundry low-index photonic platform.
We demonstrate the transfer printing of an InGaN/GaN-QW based LED on a silicon substrate, emitting around 470 nm. This result is first step toward heterogeneous integration GaN-based devices CMOS-compatible SiN photonic circuits.
We demonstrate a III-V-on-silicon-nitride mode-locked laser through the heterogeneous integration of semiconductor optical amplifier on passive silicon nitride cavity using technique micro-transfer printing. Specifically, we explore impact gain voltage and saturable absorber current locking stability tunable laser. By manipulating these parameters, control spectrum across wide range wavelengths spanning from 1530 nm to 1580 nm. Furthermore, implement an optimization approach based Monte...
Advancements in light modulator technology have been driving discoveries and progress across various fields. The problem of large-scale coherent optical control atomic quantum systems-including cold atoms, ions, solid-state color centers-presents among the most stringent requirements. This motivates a new generation high-speed with following requirements: (R1) operation at design wavelength choice visible (VIS) to near-infrared (NIR) spectrum, (R2) scalable high channel density (> 100mm-2 ),...
We report on the atomic layer deposition of ZnO for interfacing with existing Si3N4 photonics which lacks 2nd-order nonlinear functionalities. measure a χ(2) 15 pm/V in line bulk crystal.