A5048098415- Photonic and Optical Devices
- Photorefractive and Nonlinear Optics
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Optical Network Technologies
- Nanofabrication and Lithography Techniques
- Gold and Silver Nanoparticles Synthesis and Applications
- Spectroscopy Techniques in Biomedical and Chemical Research
- Electrowetting and Microfluidic Technologies
- Semiconductor Quantum Structures and Devices
- Liquid Crystal Research Advancements
- Synthesis and properties of polymers
- Advanced Optical Sensing Technologies
- Advanced Surface Polishing Techniques
- Quantum Information and Cryptography
- Optical Coatings and Gratings
- Advanced Optical Network Technologies
- Plasmonic and Surface Plasmon Research
- Advanced Optical Imaging Technologies
- Solid State Laser Technologies
Ghent University
2020-2025
Université Libre de Bruxelles
2020-2024
IMEC
2023-2024
We present the current state of art in micro-transfer printing for heterogeneously integrated silicon photonic circuits. The versatility technology is highlighted, as way ahead to make this a key enabler next-generation systems-on-chip.
Silicon photonics (SiPh) is a disruptive technology in the field of integrated and has experienced rapid development over past two decades. Various high-performance Si Ge/Si-based components have been developed on this platform that allow for complex photonic circuits (PICs) with small footprint. These PICs found use wide range applications. Nevertheless, some non-native functions are still desired, despite versatility Si, to improve overall performance at same time cut cost eventual...
Integrated photonic systems require fast modulators to keep up with demanding operation speeds and increasing data rates. The silicon nitride integrated platform is of particular interest for applications such as datacom, light detection ranging (LIDAR), quantum photonics, computing owing its low losses CMOS compatibility. Yet, this inherently lacks high-speed modulators. Heterogeneous integration lithium niobate on waveguides can address drawback strong Pockels effect. We demonstrate the...
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms scalability, standardization, complexity integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing thin-film brings TFLN well-established silicon ecosystem by easy "pick place", which showcases immense potential constructing...
High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, suspending large areas thin films for long interaction lengths high-Q resonators is challenging, resulting low transfer yield. We present new source preparation method that enables reliable niobate. demonstrate its versatility by successfully...
A high-speed modulator on silicon nitride is demonstrated using 2 mm-long micro-transfer printed lithium niobate coupons. This device has a 3-dB bandwidth >50GHz, and an insertion loss of 3.3 dB that allowed us to transmit 70 Gb/s.
Successful micro-transfer printing of lithium niobate on a silicon nitride platform is demonstrated. A proof concept electro-optical modulator fabricated using this hybrid integration method which shows half-wave voltage-length product VπLπ=5.5 Vcm and insertion losses 7 dB.
Wavelength conversion processes such as spontaneous parametric down (SPDC) and optical amplification (OPA) are key elements in integrated quantum optics. On-chip integration of these functionalities would allow for increased performance huge scaling opportunities. However, CMOS-compatible platforms silicon nitride (SiN) lack a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\chi^{(2)}$</tex> nonlinearity due to their inversion symmetry. This...
Photonic integrated circuits enable the miniaturization of photonic systems by integrating key optical functions on a chip. While CMOS compatible silicon and nitride are very efficient platforms for passive circuits, they lack active functionalities realization full system A versatile solution is to use micro-transfer printing heterogeneous integration devices such platforms. Here we present recent advances discuss remaining challenges.
High-density heterogeneous integration of thin-film lithium niobate is in demand for realizing compact silicon circuitry equipped with Pockels moduators. A very photonic crystal modulator demonstrated. The Si-LN cavity shows an insertion loss -2.6dB and extinction ratio >30dB. a tuning efficiency 6.23 pm/V electro-optical modulation bandwidth 3.5GHz.
A common technique to realize the gradient electric field profile that is required in liquid crystal tunable lenses use of a weakly conductive layer. Thanks this layer, an applied voltage with certain frequency allows us obtain refractive index for lens operation. Due limited degrees freedom, however, it not possible avoid aberrations layer-based continuously focal length. In work, we discuss additional higher components signal reduce drastically.
Several established photonic platforms lack a nonzero Pockels and nonlinear coefficient. We developed micro-transfer printing method to heterogeneously integrate thin-film lithium niobate gallium phosphide with an experimentally shown transfer yield of near-unity.
Heterogeneous integration of nonlinear materials on CMOS-compatible platforms is essential to introduce high-speed modulation. We demonstrate a process enable the printing up cm-scale lithium niobate devices allow for enhanced modulation efficiency.
A heterogeneously integrated silicon-lithium niobate microring modulator is realized by transfer-printing LN on a silicon platform. The Si-LN has an insertion loss of . 1.5dB and extinction ratio 37dB. tuning efficiency 3.8pm/V.
Lithium niobate photonics provides a low-loss platform with great properties for high-speed modulation, wavelength conversion and quantum optics. Micro-transfer printing allows scalable integration CMOS compatible silicon technologies.
High demands on quantum photonic experiments necessitate full integration of its building blocks. We integrated GaAs nanobeams embedded with InAs dots SiN as well SU8 spot size convertors for efficient fiber coupling.
State-of-the-art periodically-poled lithium niobate waveguides struggle with extreme fabrication sensitivity, resulting in unpredictable phase-matching wavelengths. We developed a micro-transfer-printed waveguide that enables deterministic at predefined wavelength through optical feedback.
Efficient low-loss coupling to micro-transfer-printed lithium niobate remains a challenge. We developed highly-selective etch that enables selective etching of tapered structures into the thin film after micro-transfer printing.
Advancements in light modulator technology have been driving discoveries and progress across various fields. The problem of large-scale coherent optical control atomic quantum systems-including cold atoms, ions, solid-state color centers-presents among the most stringent requirements. This motivates a new generation high-speed with following requirements: (R1) operation at design wavelength choice visible (VIS) to near-infrared (NIR) spectrum, (R2) scalable high channel density (> 100mm-2 ),...
Micro-transfer printing of thin-film lithium niobate (TFLN), as a backend integration method, enables selective and localized placement TFLN to silicon platform, facilitating the creation complex, multi-material systems that combine with other components. In this study, we investigate transfer technique for TFLN. We present experimental results from hybrid silicon-LN devices created using including micro-transfer printed ring modulators, photonics crystal (PhC) Bragg Grating among others.
The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but limited by lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity. In this paper, we demonstrate the integration centimetre-long thin-film lithium niobate (TFLN) devices on SiN using micro-transfer printing (uTP) method. At wavelength 1550 nm, losses approximately 0.9 dB/cm transition 1.8 dB per facet were measured....
Surface enhanced Raman spectroscopy (SERS) and stimulated (SRS) are well established techniques capable of boosting the strength scattering. The combination both (surface spectroscopy, or SE-SRS) has been reported using plasmonic nanoparticles. In parallel, waveguide developed nanophotonic nanoplasmonic waveguides. Here, we explore SE-SRS in We demonstrate that a combined photothermal thermo-optic effect gold material induces strong background signal limits detection limit for analyte....