A5050560685- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Optical Network Technologies
- Photonic Crystals and Applications
- Neural Networks and Reservoir Computing
- Mechanical and Optical Resonators
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Quantum Information and Cryptography
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Photorefractive and Nonlinear Optics
- Advanced Fiber Optic Sensors
- Plasmonic and Surface Plasmon Research
- Semiconductor materials and devices
- Advanced MEMS and NEMS Technologies
- Nanowire Synthesis and Applications
- Quantum optics and atomic interactions
- Optical Coatings and Gratings
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Optical Imaging Technologies
- Advanced Optical Sensing Technologies
- Terahertz technology and applications
- Near-Field Optical Microscopy
- Magneto-Optical Properties and Applications
Rochester Institute of Technology
2015-2024
Sanatorium Kilchberg
2023
Lumiphase (Switzerland)
2023
Florida Atlantic University
2019
Gleason (United States)
2008-2014
University of New Mexico
2012
Cornell University
2003-2008
We demonstrate a wide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) sapphire. This guides light at low loss from the ultraviolet (UV) to visible spectrum. measure ring resonators with intrinsic quality factor (Q) exceeding 170,000 638 nm and Q >20,000 down 369.5 nm, which shows promising path for low-loss integrated in UV opens up new possibilities quantum optics trapped ions or atom-like color centers solids, as well classical applications...
We experimentally measure the optical nonlinearities in hydrogenated-amorphous silicon (a-Si:H) waveguides through transmission of ultra-short pulses. The measured two-photon absorption coefficient beta is 4.1 cm/GW and we obtain a 3.5pi nonlinear phase shift at W coupled input power corresponding to refractive index n(2) 4.210(-13) cm(2)/W. gamma = 2003 (Wm)(-1) least 5 times value crystalline silicon. free carrier sigma 1.910(-16) cm(2) agrees with values predicted from Drude-Lorenz model....
We demonstrate that an integrated silicon microring resonator is capable of efficiently producing photon pairs are completely unentangled; such a key component heralded single-photon sources. A dual-channel interferometric coupling scheme can be used to independently tune the quality factors associated with pump and signal idler modes, yielding biphoton wavefunction Schmidt number arbitrarily close unity. This will permit generation states unit purity.
Silicon photonics holds significant promise in revolutionizing optical interconnects data centers and high performance computers to enable scaling into the Pb/s package escape bandwidth regime while consuming orders of magnitude less energy per bit than current solutions. In this work, we review recent progress silicon photonic leveraging chip-scale Kerr frequency comb sources provide a comprehensive overview massively scalable systems capable capitalizing on large number wavelengths...
We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated low-energy pump pulses. A p-i-n junction on the structure to permit control of carrier lifetimes. When reverse biased, are extracted from in time as short 50?ps, permitting greater than 5?Gbit?s optical signals chip.
We use evolutionary algorithms to design photonic crystal structures with large band gaps. Starting from randomly generated crystals, the algorithm yielded a gap (defined as midgap ratio) 0.3189. This is an improvement of 12.5% over best human using same index contrast platform.
We demonstrate a 1x2 all-optical comb switch using 200 mum diameter silicon ring resonator with switching time of less than 1 ns. The overcomes the small bandwidth traditional resonator, and works for wavelength division multiplexing applications. device has footprint ~0.04 mm(2) enables large number (~40) channels spaced by ~0.85 nm.
We show the existence of direct photonic transitions between modes a silicon optical microcavity spaced apart in wavelength by over 8 nm. This is achieved using ultrafast tuning refractive index cavity time interval that comparable to inverse frequency separation modes. The demonstrated mixing effect, i.e., modes, would enable on-chip comb sources which can find wide applications sensing, precise spectroscopy, and wavelength-division multiplexing for communications interconnects.
We simulate an evolutionary process in the lab for designing a novel high confinement photonic structure, starting with set of completely random patterns, no insight on initial geometrical pattern. show spontaneous emergence periodical patterns as well previously unseen subwavelength bowtie regions. The evolved structure has Q 300 and ultrasmall modal volume 0.112 (lambda/2n)3. periodic indicates that periodicity is principal condition effective control distribution light.
We demonstrate broadband all-optical modulation in low loss hydrogenated-amorphous silicon (a-Si:H) waveguides. Significant (approximately 3 dB) occurs with a device of only 15 microm without the need for cavity interference effects stark contrast to an identical crystalline waveguide. attribute enhanced significantly larger free-carrier absorption effect a-Si:H, estimated here be alpha = 1.6310(-16)N cm(-1). In addition, we measured time tau(c) approximately 400 ps, which is comparable...
Silicon photonics is a promising platform to realize the dense and scalable integration required for quantum computing, communication, sensing. The authors demonstrate key building block this platform, simple, single source of entangled photons, use it observe interference on same chip. This removes need clumsy interfacing multiple photon sources, as in previous studies, provides basis highly photonic circuits that achieve multi-qubit entanglement.
Here we present extremely low connector-to-connector loss (≤3 dB) through silicon photonic chips using ultra-low (≤0.15 splicing between SMF-28 and ultra-high numerical aperture (UHNA) fibers. The small MFD from the UHNA fibers enables strong coupling to hybrid TE/TM edge couplers achieving TM (TE) losses of 1.25 (2.35) dB per coupler polarization-dependent loss. Mode simulations tolerance are investigated understand performance.
We demonstrate the use of a micron-size planar silicon photonic device for detection ultralow concentrations metal nanoparticles. The high sensitivity is achieved by using strong light confining structure that enhances effective extinction cross section 10nm diameter gold particles with density fewer than 1.25 per 0.04μm2. Using such one could detect presence single nanoparticles specifically bound to various analytes, enabling ultrasensitive analytes including DNA, RNA, proteins, and antigens.
In this work, we experimentally demonstrate a novel broadband optical time division multiplexer (OTDM) on silicon chip. The fabricated devices generate 20 Gb/s and 40 signals starting from 5 input signal. proposed design has small footprint of 1mm x 1mm. system is inherently with bandwidth over 100nm making it suitable for high-speed networks
Silicon ring resonators are used as photon pair sources by taking advantage of silicon's large third order nonlinearity with a process known spontaneous four wave mixing. These capable producing pairs indistinguishable photons but typically suffer from an effective $50\%$ loss. By slightly decoupling the input waveguide ring, drop port coincidence ratio can be significantly increased trade-off being that pump is less efficiently coupled into ring. Ring this design have been demonstrated...
We demonstrate a new technique for high resolution imaging of near field profiles in highly confining photonic structures. This technique, Transmission-based Near-field Scanning Optical Microscopy (TraNSOM), measures changes transmission through waveguide resulting from perturbation by scanning metallic probe. Using this we compare different mode polarizations and measure transverse optical decay length lambda/15 sub-micron Silicon On Insulator (SOI) waveguides. These measurements well to...