D. Passeri
A5027748610- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Radiation Effects in Electronics
- Silicon and Solar Cell Technologies
- Diamond and Carbon-based Materials Research
- Particle physics theoretical and experimental studies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Advanced Radiotherapy Techniques
- High-Energy Particle Collisions Research
- Advanced X-ray and CT Imaging
- Advanced Semiconductor Detectors and Materials
- Silicon Nanostructures and Photoluminescence
- Silicon Carbide Semiconductor Technologies
- Analytical Chemistry and Sensors
- Radiation Therapy and Dosimetry
- Medical Imaging Techniques and Applications
- Electrostatic Discharge in Electronics
- Ion-surface interactions and analysis
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- High-pressure geophysics and materials
- Distributed and Parallel Computing Systems
Istituto Nazionale di Fisica Nucleare, Sezione di Perugia
2016-2025
University of Perugia
2016-2025
Fondazione Bruno Kessler
2024
Istituto Nazionale di Fisica Nucleare, Trento Institute for Fundamental Physics And Applications
2024
Istituto Nazionale di Fisica Nucleare, Sezione di Lecce
2023
Istituto Nazionale di Fisica Nucleare
1998-2022
Jožef Stefan Institute
2016-2018
Austrian Academy of Sciences
2012
Institute of High Energy Physics
2012
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2011
The energy loss distribution f(Δ) of highly relativistic charged particles has been measured for thin silicon layers with thickness ranging from 5.6 to 120 μm. In this work, using an innovative method, the dependence absorber investigated in great detail reference CMOS Active Pixel Sensors. distributions are well-reproduced by calculations also when target electrons binding is taken into account. Finally results obtained method compared existing experimental and theoretical data.
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates such as polyimide (PI). For these properties, a-Si:H used for the production of sensors. sensors successfully utilized in dosimetry, beam monitoring particle physics (X-ray, electron, gamma ray, and proton detection) radiotherapy, flux measurement space applications (study solar energetic particles stellar events), neutron measurements. In this...
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface effects, for the analysis of silicon detectors aimed at High Luminosity LHC. particular, model has been developed by introducing relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations doses in range 10-500 Mrad(Si). An extended model, considering impact ionization deep-level cross-sections...
Abstract Background The increasing use of complex and high dose‐rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre‐treatment quality assurance (QA) measurements alone, many countries are now mandating the vivo dosimetry, whereby a dosimeter is placed surface patient during treatment. Ideally, should be flexible conform patient's irregular surfaces. Purpose This study aims characterize novel hydrogenated amorphous...
Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of vivo requires thin with maximal transparency flexibility. For this reason, a (<10 µm) a-Si:H device deposited polyimide sheet is very valid option application. Furthermore, material that has an intrinsically high radiation hardness. In order to develop these devices, the HASPIDE (Hydrogenated Amorphous Silicon Pixel...
A novel ecofriendly electrochemical sensor for in-situ detection of testosterone based on gold nanoparticles (AuNPs) and a semi-amorphous metal organic framework (MOF) has been developed clinical diagnosis doping control. For this purpose, MIL-100(Fe) synthetized according to green path with crystallization times tuned in the range 2–24 h. The platform was constructed via drop-casting MOF AuNPs onto graphene (GPH) screen-printed electrode (SPE) surface. surface structure morphology...
In the framework of CERN-RD50 Collaboration, adoption p-type substrates has been proposed as a suitable mean to improve radiation hardness silicon detectors up fluencies 1times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> n/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . this work two numerical simulation models will be presented for and n-type detectors, respectively. A comprehensive analysis variation effective doping...
Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for fabrication biosensors (BioFETs). Aiming at optimization design and processes BioFETs, correlation between technological parameters device electrical response can be obtained by means an device-level simulation. In this work we present a numerical simulation approach to study ISFET bio-sensing devices (BioFET) using Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. The properties...
Beam test results of the radiation tolerance study chemical vapour deposition (CVD) diamond against different particle species and energies is presented. We also present beam on independence signal size incident rate in charged detectors based un-irradiated irradiated poly-crystalline CVD over a range fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height sensors was measured with readout electronics peaking time 6 ns. In addition functionality 3D devices demonstrated tests are shown be...
The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to surface a solid state radiation sensor. It permits improve resistance characteristics material by lowering necessary bias voltage and shortening charge carrier path inside material. If applied long-recognized exceptionally radiation-hard like diamond, this promises pave way realization detectors unprecedented performances. We fabricated conventional polycrystalline diamond...
Abstract Objective . Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity achieved through MRT combining ultra-high dose rates with micron-scale spatial fractionation of the delivered x-ray field. Quality assurance dosimetry for must therefore overcome a significant challenge, as detectors require both...
Abstract The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution strong to extreme energetic proton events. importance feasibility extend measurements up hundreds MeV is evaluated. a-Si:H presents an excellent radiation hardness finds application harsh environments medical purposes, particle beam characterization and, as we propose here, weather science applications. critical flux detection limits X...
Future High Energy Physics experiments require sensors to operate at extreme fluences exceeding $1\times10^{17}$ 1 MeV n$_{eq}/$cm$^2$. Therefore, technologies used for the HL-LHC scenario will be no longer applicable and novel readout electronics must devised. Within this framework, state-of-the-art Technology CAD tools can proficiently account radiation-induced damage effects in semiconductor sensors, fostering design optimization enabling predictive insight into electrical behavior of...
A new development of radiation-resistant silicon sensors is presented. The exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication charge carriers, in combination thin substrates, intrinsically less affected by radiation. An innovative design gain implant typical LGADs has been developed and fabricated, employing compensation acceptor donor dopants to reproduce effective doping dose standard LGAD sensors. At end 2022, Fondazione Bruno Kessler (Italy) delivered...
Recent developments in the domain of standard CMOS imagers for visible light, mainly reduction pixel size, has led us to investigate suitability some these devices as ionizing radiation detectors. A 640x480 imager with 5.6x5.6 micrometer size (Aptina product MT9SH06) been characterized X-ray (55Fe and 8 keV tube) charged particles sources (500 MeV electrons). The main results obtained are: a small average multiplicity (4-5), detection either or particles; good linearity response; S/N ratio...
Interventional radiologists and staff members, during all their professional activities, are frequently exposed to protracted fractionated low doses of ionizing radiation. Due skin tissues peripheral blood irradiation, these exposures can result in deterministic effects (radiodermatitis, aged skin, hand depilation) or stochastic ones (skin non-solid cancer incidence). The authors present a novel approach perform online monitoring the interventions by using device based on an Active Pixel...
This paper is a review of recent progress RD53 Collaboration. Results obtained on the study radiation effects 65 nm CMOS have matured enough to define first strategies adopt in design analog and digital circuits. Critical building blocks very front end chains been designed, tested before after 5–800 Mrad. Small prototypes 64×64 pixels with complex architectures produced, point address main issues dealing extremely high pixel rates, while operating at small in-time thresholds end. The...
Detectors that can provide accurate dosimetry for microbeam radiation therapy (MRT) must possess intrinsic hardness, a high dynamic range, and micron-scale spatial resolution. In this work we characterize hydrogenated amorphous silicon detectors MRT dosimetry, presenting novel combination of flexible, ultra-thin radiation-hard features.
The very high radiation fluences expected at the high-luminosity large hadron collider (LHC) impose new challenges in terms of design resistant silicon detectors. choice to use p-type substrates improve charge collection efficiency involves an optimization strip isolation interrupt inversion layer between n± implants, limiting breakdown voltage. To this purpose, TCAD modeling and simulation schemes, already developed validated typical LHC have be adapted take into account effects usually...
Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and primarily utilized in solar cells as particle detection dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of doped PECVD mixture Silane (SiH4) molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two options the junction fabrication have been considered: ion implantation charge selective contacts through atomic layer deposition. test...