M. Marčišovský
A5030517888- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Particle Detector Development and Performance
- Quantum Chromodynamics and Particle Interactions
- Dark Matter and Cosmic Phenomena
- Computational Physics and Python Applications
- Cosmology and Gravitation Theories
- Neutrino Physics Research
- Radiation Detection and Scintillator Technologies
- Black Holes and Theoretical Physics
- Distributed and Parallel Computing Systems
- Astrophysics and Cosmic Phenomena
- Radiation Effects in Electronics
- Medical Imaging Techniques and Applications
- CCD and CMOS Imaging Sensors
- Atomic and Subatomic Physics Research
- Advanced Data Storage Technologies
- Magnetic confinement fusion research
- Particle Accelerators and Free-Electron Lasers
- advanced mathematical theories
- Advancements in Semiconductor Devices and Circuit Design
- Muon and positron interactions and applications
- Particle accelerators and beam dynamics
- Advanced X-ray and CT Imaging
- Nuclear Physics and Applications
Czech Academy of Sciences, Institute of Physics
2016-2025
Czech Technical University in Prague
2016-2025
Northern Illinois University
2020-2024
Institute for High Energy Physics
2023-2024
Institute of Science and Technology
2023-2024
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
2019-2024
SR Research (Canada)
2024
Federación Española de Enfermedades Raras
2024
Atlas Scientific (United States)
2024
Czech Academy of Sciences
2013-2023
The Hanbury Brown–Twiss (HBT) effect holds a pivotal place in intensity interferometry and gave seminal contribution to the development of quantum optics. To observe such an effect, both good spectral timing resolutions are necessary. Most often, HBT is observed for single frequency at time due its limitations dealing with multifrequencies simultaneously, halting limiting some applications. Here, we report fast data-driven spectrometer built one-dimensional array single-photon-sensitive...
The role of the COMPASS tokamak in research generation, confinement and losses runaway electron (RE) population is presented. Recently, two major groups experiments aimed at improved understanding control REs have been pursued. First, effects massive gas injection ( Ar/Ne particles) impurity seeding were studied systematically. observed phenomena include generation post-disruption RE beam current conversion from plasma to RE. Zero loop voltage was implemented order study decay simplified...
This paper is a review of recent progress RD53 Collaboration. Results obtained on the study radiation effects 65 nm CMOS have matured enough to define first strategies adopt in design analog and digital circuits. Critical building blocks very front end chains been designed, tested before after 5–800 Mrad. Small prototypes 64×64 pixels with complex architectures produced, point address main issues dealing extremely high pixel rates, while operating at small in-time thresholds end. The...
The integration of front-end electronics into pixel enables hybrid detectors to capture a high-resolution X-ray image. decreasing size the technology node allows integrate in tens micrometers pitch. On other hand, pitch leads new problems, such as charge-sharing effect and fluorescent photons high-Z materials. These effects decrease spatial spectroscopic resolution detectors. This article presents novel asynchronous hit allocation algorithm, Winner–Leader–Follower (WLF). proposed algorithm...
This paper presents two scenarios used for generation of a runaway electron (RE) beam in the COMPASS tokamak with focus on decay phase and control beam. The first scenario consists massive gas injection argon into current ramp-up phase, leading to disruption accompanied by plateau generation. In second scenario, smaller amount is order isolate RE from high-temperature plasma. performances radial vertical position feedback were experimentally studied analysed. role energy stability seems be...
In this work, we present a prototype of the Monolithic Active Pixel Sensor (MAPS) called X-CHIP-02 designed in 180 nm SOI CMOS technology. The selected technology has attractive features for fabrication X-ray imaging sensors: 100 Ω⋅ cm handle wafer resistivity, thick epitaxial layer to suppress back-gate effect, support high voltage devices and deep trench isolation. two pixel matrices with pitch 50 μm integrated 8-bit photon counting circuitry. Fine monolithic pixels imply small capacitance...
The Hanbury Brown-Twiss (HBT) effect holds a pivotal place in intensity interferometry and gave seminal contribution to the development of quantum optics. To observe such an effect, both good spectral timing resolutions are necessary. Most often, HBT is observed for single frequency at time, due limitations dealing with multifrequencies simultaneously, halting limiting some applications. Here, we report fast data-driven spectrometer built one-dimensional array single-photon-sensitive...
We present the SpacePix-D, a battery-operated standalone pixel detector with built-in LCD for real-time visualization of particle hits and Bluetooth wireless access. The SpacePix-D allows possibility local remote operation it serves as demonstrator new 180 nm SoI monolithic 64 × detection ASICs hit counting deposited energy measurement capability. Currently, operates X-chip03 ASIC which can be upgraded to class SpacePix detectors. has been submitted manufacturing was designed charged sensing...
This work presents a novel MAPS sensor X-CHIP-03 developed for soft X-ray radiation imaging and advanced dosimetry. was fabricated in 180 nm SOI CMOS technology. The presented contains matrix of 64 × pixels with 60 μm pixel pitch. Advantage this technology is possibility to integrate complex electronics the while preserving 100% fill factor detection. Novel feature capability operate hit-counting mode or ADC mode. hit counting primarily designed intended measurement energy deposited each...
The Phase 2 upgrades of silicon pixel detectors at HL-LHC experiments feature extreme require- ments, such as: 50x50 μm pixels, high rate (3 GHz/cm2), unprecedented radiation levels (1 Grad), readout speed and serial powering. As a consequence new chip is required. In this framework the RD53 collaboration submitted RD53A, large scale demonstrator de- signed in 65 nm CMOS technology, integrating matrix 400×192 pixels. It features design variations analog digital for testing purposes. An...
This work concerns the design and construction of a flexible FPGA based data acquisition system aimed for particle detectors. The interface card as presented was designed large area detectors with millions individual readout channels. Flexibility achieved by partitioning into multiple PCBs, creating set modular blocks, allowing creation wide variety configurations simply stacking functional PCBs together. way user can easily toggle polarity high voltage bias supply or switch downstream from...
In special tests, the active layers of CALICE Digital Hadron Calorimeter prototype, DHCAL, were exposed to low energy particle beams, without being interleaved by absorber plates. The thickness each layer corresponded approximately 0.29 radiation lengths or 0.034 nuclear interaction lengths, defined mostly copper and steel skins detector cassettes. This paper reports on measurements performed with this device in Fermilab test beam positrons range 1 10 GeV. are compared simulations based...
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and radiation levels (500 Mrad, possibly 1 Grad) ATLAS CMS phase 2 upgrades. It features serial powering operation design variations in analog digital matrix different testing purposes. The verification of are described together with an outline plans to develop final chips two experiments.
We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in 180 nm SOI technology. The SEU cross section custom D flip-flops X-CHIP-03 ASIC has been evaluated using accelerated ions with LET ranging from 0.45 to 69 MeV⋅cm2⋅mg−1. global response at dose rate 16.2 Gy⋅min−1. direct I-V measurements transistor properties were made under identical radiation conditions predecessor X-CHIP-02 same technology, which contains testing matrices for measurements.
The RD53 collaboration is developing a large scale pixel front-end chip, which will be tool to evaluate the performance of 65 nm CMOS technology in view its application readout innermost detector layers ATLAS and CMS at HL-LHC. Experimental results characterization small prototypes discussed frame design work that currently leading development demonstrator chip RD53A submitted early 2017. paper focused on analog processors developed framework collaboration, including three time over...
A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by pitch 50 μm and 100 μm. The X-CHIP-02 contains several test structures, are useful for characterization individual blocks. sensitive part in handle wafer is one key structures designed testing. purpose this structure to determine capacitance...