A5026782847- Advanced Optical Sensing Technologies
- Advanced Fluorescence Microscopy Techniques
- CCD and CMOS Imaging Sensors
- Optical Imaging and Spectroscopy Techniques
- Radiation Detection and Scintillator Technologies
- Analytical Chemistry and Sensors
- Quantum and electron transport phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Medical Imaging Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum Computing Algorithms and Architecture
- Photonic and Optical Devices
- Ocular and Laser Science Research
- Particle Detector Development and Performance
- VLSI and FPGA Design Techniques
- Semiconductor materials and devices
- Photoacoustic and Ultrasonic Imaging
- Optical Coherence Tomography Applications
- VLSI and Analog Circuit Testing
- Atomic and Subatomic Physics Research
- Low-power high-performance VLSI design
- Analog and Mixed-Signal Circuit Design
- Advancements in PLL and VCO Technologies
- Quantum Information and Cryptography
- Random lasers and scattering media
École Polytechnique Fédérale de Lausanne
2016-2025
Delft University of Technology
2013-2023
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2023
Universidad Complutense de Madrid
2023
Institute for High Energy Physics
2023
Universitat Politècnica de Catalunya
2023
University of Geneva
2023
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
2023
University of Zurich
2023
California Institute of Technology
2017-2022
A fault-tolerant quantum computer with millions of bits (qubits) requires massive yet very precise control electronics for the manipulation and readout individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows closer system integration, thus promising a scalable solution enable future computers. In this paper, is proposed, along required specifications, interface classical processor. To prove advantages such system, functionality key circuit blocks...
The design and characterization of an imaging system is presented for depth information capture arbitrary three-dimensional (3-D) objects. core the array 32 /spl times/ rangefinding pixels that independently measure time-of-flight a ray light as it reflected back from objects in scene. A single cone pulsed laser illuminates scene, thus no complex mechanical scanning or expensive optical equipment are needed. Millimetric accuracies can be reached thanks to rangefinder's detectors enable...
We present a 1 Mpixel single-photon avalanche diode camera featuring 3.8 ns time gating and 24 kfps frame rate, fabricated in 180 nm CMOS image sensor technology. designed two pixels with pitch of 9.4 µm 7 T 5.75 configurations respectively, achieving maximum fill factor 13.4%. The photon detection probability is 27%, median dark count rate 2.0 cps, variation length 120 ps, position skew 410 rise/fall <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow...
Cryogenic CMOS, or cryo-CMOS circuits and systems, are emerging in VLSI design for many applications, primis quantum computing. Fault-tolerant bits (qubits) surface code configurations, one of the most accepted implementations computing, operate deep sub-Kelvin regime require scalable classical control circuits. In this paper we advocate need a new generation deep-submicron CMOS operating at deep-cryogenic temperatures to achieve performance required fault-tolerant qubit system. We outline...
Since the seventies, positron emission tomography (PET) has become an invaluable medical molecular imaging modality with unprecedented sensitivity at picomolar level, especially for cancer diagnosis and monitoring of its response to therapy.More recently, combination X-ray computed (CT) or magnetic resonance (MR) added high precision anatomic information in fused PET/CT PET/MR images, thus compensating modest intrinsic spatial resolution PET.Nevertheless, a number challenges call further...
Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm 40-nm) are presented in this paper. Several devices from both were extensively characterized at temperatures 4 K below. Based on a detailed understanding the device physics deep-cryogenic temperatures, compact model based MOS11 PSP was developed. In addition to reproducing dc characteristics, accuracy validity models demonstrated by comparing time- frequency-domain simulations complex circuits, such as...
A 252 × 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps resolution (LSB). Each 126 pixels a half-column are connected to six TDCs through collision bus, which enables effective sharing of resources, consequently fill factor 28% pitch 28.5 μm. columnparallel TDCs, based on dual-clock architecture, exhibit...
An imager for time-resolved optical sensing was fabricated in CMOS technology. The sensor comprises an array of 128times128 single-photon pixels, a bank 32 time-to-digital-converters, and 7.68 Gbps readout system. Thanks to the outstanding timing precision avalanche diodes optimized measurement circuitry, typical resolution 97 ps achieved within range 100 ns. To best our knowledge, this is first fully integrated system photon time-of-arrival evaluation. Applications include 3-D imaging,...
In this paper, we present an array of 160x128 pixels capable detecting the ToA single photons, implemented in 0.13μm CMOS technology. The sensor is partitioned into 4 identical quadrants that are served by a balanced clock tree so as to minimize skews and ensure fastest possible readout process. rows read out rolling shutter mode two directions (top bottom) simultaneously. 10b content each pixel thus transferred exterior chip via 320 independent serializers, 2 for column, working parallel at...
A methodology for the automatic synthesis of full-custom IC layout with analog constraints is presented. The guarantees that all performance are met when feasible, or otherwise, infeasibility detected as soon possible, thus providing a robust and efficient design environment. In proposed approach, specifications translated into lower-level bounds on parasitics geometric parameters, using sensitivity analysis. Bounds can be used by set specialized tools performing stack generation, placement,...
We report on the design and characterization of a novel time-resolved image sensor fabricated in 130 nm CMOS process. Each pixel within 3232 array contains low-noise single-photon detector high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits timing resolution 119 ps with uniformity across entire less than 2 LSBs. differential non-linearity (DNL) integral (INL) were measured at ±0.4 ±1.2 LSBs, respectively. was pitch 50 μm both directions total area 2000 <sup...
We report on the first implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with octagonal shape. A guard ring p-well around p+ anode used to prevent premature discharge. To investigate dynamics new device, both active and passive quenching methods have been used. Single detection achieved by sensing using fast comparator. exhibits maximum probability 41% typical dark count...
We report on SwissSPAD2, an image sensor with 512×512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), 1-bit memory, and gating mechanism capable of turning the SPAD off, skew 250ps 344ps, respectively, for minimum duration 5.75ns. The is designed to achieve frame rate up 97,700 binary frames per second sub-40ps gate shifts. By synchronizing it pulsed laser using multiple successive overlapping gates, one can reconstruct molecule's fluorescent response...
This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through avalanche diodes (SPADs), and making miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging biomedical imaging, to name just a few. The focuses architectures that best suited those applications trade-offs they...
We present the architecture and three applications of largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date.The sensor, fabricated in a high-voltage CMOS process, has 512 x 128 pixels pitch 24 μm.The fill-factor 5% can be increased 30% with use microlenses.For precise control exposure for time-resolved imaging, we fast global gating signals define windows as small 4 ns.The uniformity gate edges location is ~140 ps (FWHM) over whole array, while...
We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD based on P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /Deep N-well junction with circular shape, intentionally excluded to achieve wide depletion region, thus enabling lower tunneling noise and better timing jitter as well higher photon detection...
A quantum computer comprises both qubits and their classical electronic interface. While much research is currently devoted solely to qubits, an efficient controller also urgently needed for a scalable computer. This study uses analytical techniques expose the effect of nonideal circuit blocks in on qubit fidelity, all required operations, how fidelity affected by limited performance general-purpose, room-temperature equipment typically used with few types available today. Tailor-made...
Building a large-scale quantum computer requires the co-optimization of both bits (qubits) and their control electronics. By operating CMOS circuits at cryogenic temperatures (cryo-CMOS), hence in close proximity to solid-state qubits, compact quantum-computing system can be achieved, thus promising scalability large number qubits required practical application. This work presents cryo-CMOS microwave signal generator for frequency-multiplexed 4 × 32 (32 per RF output). A digitally intensive...
A 1 × 400 array of backside-illuminated SPADs fabricated in 130 nm 3D IC CMOS technology is presented. Sensing performed the top tier substrate and time-to-digital conversion bottom tier. Clusters eight pixels are connected to a winner-take-all circuit with collision detection capabilities realise an efficient sharing converter (TDC). The sensor's 100 TDCs based on dual-frequency architecture enabling 30 pJ per at rate 13.3 ms/s TDC. resolution (1 LSB) 49.7 ps standard deviation 0.8 across...
Quantum computers (QC), comprising qubits and a classical controller, can provide exponential speed-up in solving certain problems. Among solid-state qubits, transmons spin-qubits are the most promising, operating ≪ 1K. A qubit be implemented physical system with two distinct energy levels representing |0) |1) states, e.g. up down spin states of an electron. The manipulated microwave pulses, whose frequency f matches level spacing E = hf (Fig. 19.1.1). For transmons, ~ 6GHz, for 20GHz,...