Z. Janoška
A5054791305- Particle Detector Development and Performance
- CCD and CMOS Imaging Sensors
- Radiation Detection and Scintillator Technologies
- Radiation Effects in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Advanced X-ray and CT Imaging
- Medical Imaging Techniques and Applications
- Nuclear Physics and Applications
- Analog and Mixed-Signal Circuit Design
- Analytical Chemistry and Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Plasma Diagnostics and Applications
- Advancements in PLL and VCO Technologies
- High-Energy Particle Collisions Research
- Advanced Optical Sensing Technologies
- Advanced Semiconductor Detectors and Materials
- Remote Sensing and LiDAR Applications
- Particle physics theoretical and experimental studies
- Semiconductor materials and devices
- Distributed and Parallel Computing Systems
- Image Processing and 3D Reconstruction
- Particle Accelerators and Free-Electron Lasers
- Leaf Properties and Growth Measurement
- Electron and X-Ray Spectroscopy Techniques
- Advanced Data Storage Technologies
Czech Technical University in Prague
2014-2024
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
2019
Science and Technology Facilities Council
2019
Rutherford Appleton Laboratory
2019
European Organization for Nuclear Research
2019
Czech Academy of Sciences, Institute of Physics
2012-2018
Czech Academy of Sciences
2012-2018
National Institute for Subatomic Physics
2017
Transport Research Centre
2013
We describe the characterization of TimepixCam, a novel camera used to time-stamp optical photons. The employs specialized silicon sensor with thin entrance window, read out by Timepix ASIC. TimepixCam is able record and light flashes exceeding 1,000 photons 15 ns time resolution. Specially produced photodiodes were evaluate quantum efficiency, which was determined be higher than 90% in wavelength range 430–900 nm. sensitivity ion detection efficiency compared for variety sensors different...
Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance sharing between neighbouring cells as a function track incidence angle for different bulk materials. n-in-n presented fluence irradiations. Furthermore p-type from several vendors slightly differing layouts were tested. All tested connected by bump-bonding to Pixel...
This paper is a review of recent progress RD53 Collaboration. Results obtained on the study radiation effects 65 nm CMOS have matured enough to define first strategies adopt in design analog and digital circuits. Critical building blocks very front end chains been designed, tested before after 5–800 Mrad. Small prototypes 64×64 pixels with complex architectures produced, point address main issues dealing extremely high pixel rates, while operating at small in-time thresholds end. The...
The integration of front-end electronics into pixel enables hybrid detectors to capture a high-resolution X-ray image. decreasing size the technology node allows integrate in tens micrometers pitch. On other hand, pitch leads new problems, such as charge-sharing effect and fluorescent photons high-Z materials. These effects decrease spatial spectroscopic resolution detectors. This article presents novel asynchronous hit allocation algorithm, Winner–Leader–Follower (WLF). proposed algorithm...
In this work, we present a prototype of the Monolithic Active Pixel Sensor (MAPS) called X-CHIP-02 designed in 180 nm SOI CMOS technology. The selected technology has attractive features for fabrication X-ray imaging sensors: 100 Ω⋅ cm handle wafer resistivity, thick epitaxial layer to suppress back-gate effect, support high voltage devices and deep trench isolation. two pixel matrices with pitch 50 μm integrated 8-bit photon counting circuitry. Fine monolithic pixels imply small capacitance...
We present the SpacePix-D, a battery-operated standalone pixel detector with built-in LCD for real-time visualization of particle hits and Bluetooth wireless access. The SpacePix-D allows possibility local remote operation it serves as demonstrator new 180 nm SoI monolithic 64 × detection ASICs hit counting deposited energy measurement capability. Currently, operates X-chip03 ASIC which can be upgraded to class SpacePix detectors. has been submitted manufacturing was designed charged sensing...
This work presents a novel MAPS sensor X-CHIP-03 developed for soft X-ray radiation imaging and advanced dosimetry. was fabricated in 180 nm SOI CMOS technology. The presented contains matrix of 64 × pixels with 60 μm pixel pitch. Advantage this technology is possibility to integrate complex electronics the while preserving 100% fill factor detection. Novel feature capability operate hit-counting mode or ADC mode. hit counting primarily designed intended measurement energy deposited each...
The Phase 2 upgrades of silicon pixel detectors at HL-LHC experiments feature extreme require- ments, such as: 50x50 μm pixels, high rate (3 GHz/cm2), unprecedented radiation levels (1 Grad), readout speed and serial powering. As a consequence new chip is required. In this framework the RD53 collaboration submitted RD53A, large scale demonstrator de- signed in 65 nm CMOS technology, integrating matrix 400×192 pixels. It features design variations analog digital for testing purposes. An...
Identification of curves and straight sections on roads is important from a traffic safety point view. We present method for the automatic identification based available geographic data - sequence points which determines line. The Douglas-Peucker algorithm used to generalize lines. At every line, coefficient curvature calculated. According it possible decide line segments are sections. For making decision, other characteristics lines were also studied, but obtained results support that most...
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and radiation levels (500 Mrad, possibly 1 Grad) ATLAS CMS phase 2 upgrades. It features serial powering operation design variations in analog digital matrix different testing purposes. The verification of are described together with an outline plans to develop final chips two experiments.
The RD53 collaboration is developing a large scale pixel front-end chip, which will be tool to evaluate the performance of 65 nm CMOS technology in view its application readout innermost detector layers ATLAS and CMS at HL-LHC. Experimental results characterization small prototypes discussed frame design work that currently leading development demonstrator chip RD53A submitted early 2017. paper focused on analog processors developed framework collaboration, including three time over...
A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by pitch 50 μm and 100 μm. The X-CHIP-02 contains several test structures, are useful for characterization individual blocks. sensitive part in handle wafer is one key structures designed testing. purpose this structure to determine capacitance...
The PH32 readout chip for the measurement of X-rays, beta radiation and ions including alpha particles has been developed recently. was manufactured using a commercial 180 nm CMOS process can be used in dose rate basic spectroscopy. It is able to measure generated charge as well counting hits from silicon sensor two operation modes. low range mode 7 ke <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> 40 soft X-rays radiation, high 200 5...
Abstract This paper proposes a low power 10-bit asynchronous fully-differential column analog to digital converter (ADC) with successive approximation (SAR) and charge redistribution in 180 nm SoI technology. The ADC is designed for use Spacepix-2 monolithic active pixel sensor. A novel folded architecture of internal capacitive (CDAC) proposed. total capacitance CDAC 512 fF, single unit capacitor only 0.5 fF size 2.5 × 1.4 μm 2 . input the proposed 220 fF. Two columns matrix share double...
This work focuses on the design of a semiconductor pixelated γ-ray camera with pixel size 1 mm2. The cost manufacturing is mainly driven by economies scale, which makes silicon cheapest material due to its widespread utilization. energy γ-photons used in radiation therapy are range, dominant interaction mechanism Compton scattering every conceivable sensor material. Since cross section linearly dependent upon Z, it less rewarding utilize high Z materials, than case X-ray detectors (X-rays...
The front-end readout chip PH32, that is suitable for the measurement of {X-rays}, beta radiation and ions, primarily dedicated to dose rate basic spectroscopy. This article focused on Time-of-Flight (ToF) functionality used in particle tracking or ion mass PH32 was manufactured using a commercial 180 nm CMOS process contains various possibilities ToF measurements including Time-of-Arrival (ToA) counter each individual channel, global ToA controlled by internal trigger logic output with...
The RD53A large scale pixel demonstrator chip has been developed in 65 nm CMOS technology by the RD53 collaboration, order to face unprecedented design requirements of 2 phase upgrades CMS and ATLAS experiments at CERN. This prototype is designed demonstrate that a set challenging specifications can be met, such as: high granularity (small pixels 50×50 or 25× 100 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) size (~2×2 cm ), hit...
Abstract The SpacePix2 monolithic active pixel sensor (MAPS) is a novel ASIC for space radiation monitoring designed in 180 nm SOI CMOS technology. area 3.84 × mm 2 , matrix arranged as 64 array with 60 µm pitch. front-end amplifier signal range 2–80 ke − extended up to 30 Me using backside channel. Diodes integrated the handle wafer each are biased at −150 V. Impinging particle generates charge pulse converted voltage by sensitive (CSA). Maximum memorized peak detector hold (PDH) circuit...
This work discusses the design and main results relevant to characterization of analog front-end processors in view their operation pixel detector readout chips ATLAS CMS at High-Luminosity LHC. The channels presented this paper are part RD53A, a large scale demonstrator designed 65 nm CMOS technology by RD53 collaboration. collaboration is now developing full-sized for actual experiments. Some details on improvements implemented front-ends provided paper.
We present a proof-of-principle measurement of runaway electrons in small tokamak using silicon strip detector. The detector was placed inside the diagnostic port vessel and detected electron signal directly. measured compared to provided by other diagnostics, especially hard X-ray scintillation detector, which detects secondary photons created interaction accelerated with walls (indirect detection electrons). preliminary results show that when not saturated, direct segmented provides...
We present a study of radiation effects on MOSFET transistors irradiated with 60Co source to total absorbed dose 1.5 Mrad. The transistor test structures were manufactured using commercial 150 nm CMOS process and are composed different types (NMOS PMOS), dimensions insulation from the bulk material by means deep n-wells. have observed degradation electrical characteristics both PMOS NMOS transistors, namely large increase leakage current after irradiation.