S. Sciortino
A5015732203- Diamond and Carbon-based Materials Research
- Particle Detector Development and Performance
- High-pressure geophysics and materials
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Radiation Detection and Scintillator Technologies
- Silicon Carbide Semiconductor Technologies
- Electronic and Structural Properties of Oxides
- Atomic and Subatomic Physics Research
- Metal and Thin Film Mechanics
- Advanced Surface Polishing Techniques
- Silicon and Solar Cell Technologies
- Advanced X-ray and CT Imaging
- CCD and CMOS Imaging Sensors
- Semiconductor materials and interfaces
- Medical Imaging Techniques and Applications
- Force Microscopy Techniques and Applications
- Advanced Fiber Laser Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Semiconductor Detectors and Materials
- Advanced Radiotherapy Techniques
- Laser Material Processing Techniques
- Radiation Therapy and Dosimetry
- Thin-Film Transistor Technologies
Istituto Nazionale di Fisica Nucleare, Sezione di Firenze
2014-2024
University of Florence
2014-2024
National Research Council
2019-2024
Istituto Nazionale di Fisica Nucleare
2005-2022
National Institute of Optics
2018-2022
Istituto Nazionale di Fisica Nucleare, Sezione di Perugia
2010
University of Perugia
2010
Polytechnic University of Bari
2010
National Institute for Astrophysics
2010
Fachhochschule Wiener Neustadt
2010
Implementation of 3D-architectures in diamond detectors promises to achieve unreached performances the radiation-harsh environment future high-energy physics experiments. This work reports on collection efficiency under β-irradiation graphitic 3D-electrodes, created by laser pulses domains nanoseconds (ns-made-sensors) and femtoseconds (fs-made-sensors). Full is achieved with fs-made-sensors, while a loss 25%–30% found for ns-made-sensors. The peculiar behaviour ns-made sensors has been...
The LABEC laboratory, the INFN ion beam laboratory of nuclear techniques for environment and cultural heritage, located in Scientific Technological Campus University Florence Sesto Fiorentino, started its operational activities 2004, after decided 2001 to provide our applied physics group with a large dedicated applications accelerator-related analytical techniques, based on new 3 MV Tandetron accelerator. accelerator greatly improved performance existing Ion Beam Analysis (IBA) (for which...
The relatively high value of the energy required to produce an electron-hole pair in silicon carbide, SiC, by a minimum ionizing particle (MIP) against for Si, imposes severe constrains crystallographic quality, thickness and doping concentration SiC epitaxial layer used as detection medium. In this work, 40 /spl mu/m thick 4 H-SiC with low sim/5/spl times/10/sup 13/ cm/sup -3/ was order have number (/spl sim/2200) e-h pairs generated MIP deplete total active at reverse bias (60 V)....
Beam test results of the radiation tolerance study chemical vapour deposition (CVD) diamond against different particle species and energies is presented. We also present beam on independence signal size incident rate in charged detectors based un-irradiated irradiated poly-crystalline CVD over a range fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height sensors was measured with readout electronics peaking time 6 ns. In addition functionality 3D devices demonstrated tests are shown be...
The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to surface a solid state radiation sensor. It permits improve resistance characteristics material by lowering necessary bias voltage and shortening charge carrier path inside material. If applied long-recognized exceptionally radiation-hard like diamond, this promises pave way realization detectors unprecedented performances. We fabricated conventional polycrystalline diamond...
Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as quantum technologies and sensing. Due to the strong luminescence concentrated its sharp zero-phonon line at room temperature, SiV being investigated single-photon sources communication, also temperature probes Here, we discussed strategies fabrication of based on Si-ion implantation followed by thermal activation. color high-quality single crystals have best optical properties, but...
In this work we analyzed the radiation hardness of SiC p/sup +/ n diodes used as minimum ionizing particle (MIP) detectors after very high 1 MeV neutron fluences. The diode structure is based on ion implanted emitter in an n-type epilayer with thickness equal to 55 /spl mu/m and donor doping N/sub D/=2/spl times/ 10/sup 14/cm/sup -3/. breakdown voltages were above 1000 V. At V leakage currents are order nA for all measured diodes. full depletion voltage near 220-250 charge collection...
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. observed reduction the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy 180 meV that populates shelving state. Nonetheless, signal decreased only 50% and 75% respect room temperature at 500 K 700 K, respectively. In addition, center is found highly photostable temperatures exceeding 800 K....
Direct laser writing of conductive paths in synthetic diamond is interest for implementation radiation detection and clinical dosimetry. Unraveling the microscopic processes involved irradiation below close to graphitization threshold under same conditions as experimental procedure used produce three-dimensional devices necessary tune parameters optimal results. To this purpose a transient currents technique has been measure laser-induced current signals monocrystalline detectors wide range...
Detector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300–650 K. Two previously unknown defects identified, characterized by activation energies E1=1.14 eV E2=1.23 eV, cross sections of about σ≈10−13 cm2 concentrations Nt≈1016 cm−3. They clearly observed PICTS isolated TSC measurements use a fractional annealing cycle 300–400 Due...
An accurate control of the optical properties single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in engineering integrated photonic devices. In this work we present systematic study variation both real and imaginary parts refractive index diamond, when damaged with 2 3 MeV protons at low-medium fluences (range: 10^15 - 10^17 cm^-2). After implanting 125x125 um^2 areas scanning microbeam, pathlength implanted regions was measured laser...