Shannon S. Nicley

ORCID: 0000-0002-5960-7873
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About
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Research Areas
  • Diamond and Carbon-based Materials Research
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Molecular Junctions and Nanostructures
  • Laser Material Processing Techniques
  • Ion-surface interactions and analysis
  • Boron and Carbon Nanomaterials Research
  • Laser-induced spectroscopy and plasma
  • Force Microscopy Techniques and Applications
  • High-pressure geophysics and materials
  • Fuel Cells and Related Materials
  • Nonlinear Optical Materials Studies
  • Quantum optics and atomic interactions
  • Atomic and Subatomic Physics Research
  • Graphene research and applications
  • Advanced Fiber Laser Technologies
  • Advanced Measurement and Metrology Techniques
  • Nanowire Synthesis and Applications
  • Near-Field Optical Microscopy
  • Thermal properties of materials
  • Advanced Surface Polishing Techniques
  • Quantum and electron transport phenomena
  • Electrocatalysts for Energy Conversion
  • Surface Roughness and Optical Measurements

Michigan State University
2009-2023

Fraunhofer USA
2021-2023

Quantum Devices (United States)
2023

University of Oxford
2018-2022

Hasselt University
2016-2022

IMEC
2016-2019

Institute for Materials Research, Tohoku University
2018

Imec the Netherlands
2018

Abstract In searching for alternative oxygen evolution reaction (OER) catalysts acidic water splitting, fast screening of the material intrinsic activity and stability in half‐cell tests is vital importance. The process significantly accelerates discovery new promising materials without need time‐consuming real‐cell analysis. commonly employed tests, a conclusion on catalyst drawn solely basis electrochemical data, example, by evaluating potential‐versus‐time profiles. Herein important...

10.1002/cssc.201701523 article EN ChemSusChem 2017-09-18

Atomic defects in wide band gap materials show great promise for development of a new generation quantum information technologies, but have been hampered by the inability to produce and engineer controlled way. The nitrogen-vacancy (NV) color center diamond is one foremost candidates, with single allowing optical addressing electron spin nuclear degrees freedom potential applications advanced sensing computing. Here we demonstrate method deterministic writing individual NV centers at...

10.1364/optica.6.000662 article EN cc-by Optica 2019-05-10

Well-defined covalent surface functionalization of diamond is a crucial, yet nontrivial, matter because diamond's intrinsic chemical inertness and stability. Herein, we demonstrate two-step approach for H-terminated boron-doped thin films, which can lead to significant advances in the field hybrid photovoltaics. Primary performed via electrochemical diazonium grafting situ diazotized 4-iodoaniline. The freshly grafted iodophenyl functional moieties are then employed couple layer thiophene...

10.1021/acs.jpcc.7b06426 article EN The Journal of Physical Chemistry C 2017-10-06

Engineering single atomic defects into wide-band-gap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy, which often a constituent part of more complex nitrogen-vacancy (NV) center diamond, therefore understanding formation mechanisms precision engineering vacancies desirable. We present theoretical experimental study ultrafast laser generation...

10.1103/physrevb.104.174303 article EN Physical review. B./Physical review. B 2021-11-15

Improving the performance of p-type photoelectrodes represents a key challenge toward significant advancement in field tandem dye-sensitized solar cells. Herein, we demonstrate application boron-doped nanocrystalline diamond (B:NCD) thin films, covalently functionalized with dithienopyrrole-benzothiadiazole push-pull chromophore, as alternative photocathodes. First, primary functional handle is introduced on H-terminated via electrochemical diazonium grafting. Afterwards, Sonogashira...

10.1039/c8ra07545j article EN cc-by-nc RSC Advances 2018-01-01

Hexagonal boron nitride nanowall thin films were deposited on Si(100) substrates using a Ar(51%)/N2(44%)/H2(5%) gas mixture by unbalanced radio frequency sputtering. The effects of various target-to-substrate distances, substrate temperatures, and tilting angles investigated. When the is close to target, hydrogen etching plays significant role in film growth, while effect negligible for at farther distance. relative quantity defects was measured non-destructive infrared spectroscopy...

10.1021/acs.cgd.6b00191 article EN Crystal Growth & Design 2016-05-25

This work describes the growth of boron-doped nanocrystalline diamond (B:NCD) films on gold-coated substrates and methodologies for achieving B:NCD with either smooth morphologies or top gold nanoparticles (AuNPs) varying sizes controlled by surface pretreatment. is deposited uniformly over ∼1 cm2 substrates. AuNPs ∼100–500 nm diameter formed during microwave plasma-assisted chemical vapor deposition, these were overgrown diamond. The size under film can be increased oxygen treatment prior...

10.1021/acs.cgd.9b00488 article EN Crystal Growth & Design 2019-05-01

Abstract The corner architecture Schottky barrier diode (SBD) structure is proposed as an alternative vertical for the realization of high power, temperature, single crystal diamond diodes. lightly doped layer grown in a direction perpendicular to previous epitaxial growth heavily layer, reduce threading‐type dislocations active region fabricated first ever SBD and evaluated performance. fabrication steps are described, including homoepitaxial films deposited at low doping levels....

10.1002/pssa.201532220 article EN physica status solidi (a) 2015-09-10

Detecting a non-zero electric dipole moment in particle would unambiguously signify physics beyond the Standard Model. A potential pathway towards this is detection of nuclear Schiff moment, magnitude which enhanced by presence octupole deformation. However, due to low production rate isotopes featuring such 'pear-shaped' nuclei, capturing, detecting and manipulating them efficiently crucial prerequisite. Incorporating into synthetic diamond optical crystals can produce defects with defined,...

10.1098/rsta.2023.0169 article EN cc-by Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences 2023-12-04

Paul W. May Paulius Pobedinskas Shannon S. Nicley It is our privilege to present this Topical Section of physica status solidi (a) highlighting recent advances in diamond science and technology. In the last decade, research on deposition applications lab grown has made rapid progress beginning find real commercial success. particular, gemstone now become a reality, with many companies China, India, Singapore US making large quantities gem-quality for jewellery market. Now, more than ever,...

10.1002/pssa.201800787 article EN physica status solidi (a) 2018-11-01

The negatively charged nickel vacancy center (NiV$^-$) in diamond is a promising spin qubit candidate with predicted inversion symmetry, large ground state orbit splitting to limit phonon-induced decoherence, and emission the near-infrared. Here, we experimentally confirm proposed geometric electronic structure of NiV defect via magneto-optical spectroscopy. We characterize optical properties find Debye-Waller factor 0.62. Additionally, engineer charge stabilized defects using electrical...

10.48550/arxiv.2411.07196 preprint EN arXiv (Cornell University) 2024-11-11

A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of technologies, such as key distribution or metrology. Color centers in diamond are promising candidates they photostable emitters room and elevated temperatures. The possibility their excitation has already been demonstrated within p-i-n diodes. However, this requires the growth complex structures. In contrast to these conventional approaches, we demonstrate...

10.48550/arxiv.2408.01572 preprint EN arXiv (Cornell University) 2024-08-02
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