John Wright
A5039304478- GaN-based semiconductor devices and materials
- Particle Detector Development and Performance
- Semiconductor materials and devices
- Radiation Detection and Scintillator Technologies
- Metal and Thin Film Mechanics
- Acoustic Wave Resonator Technologies
- Ga2O3 and related materials
- Integrated Circuits and Semiconductor Failure Analysis
- Radiation Effects in Electronics
- Physics of Superconductivity and Magnetism
- CCD and CMOS Imaging Sensors
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- 3D IC and TSV technologies
- Copper Interconnects and Reliability
- Electrostatic Discharge in Electronics
- Atomic and Subatomic Physics Research
- Quantum and electron transport phenomena
- MXene and MAX Phase Materials
- Silicon Carbide Semiconductor Technologies
- Electronic Packaging and Soldering Technologies
- Electronic and Structural Properties of Oxides
- Ultrasonics and Acoustic Wave Propagation
- Advanced Optical Sensing Technologies
- Piezoelectric Actuators and Control
Cornell University
2018-2023
University of California, Santa Cruz
2010-2013
University of Geneva
2010
University of Cambridge
2010
University of Tsukuba
2009
IBM (United States)
2003-2004
Abstract The nitride semiconductor materials GaN, AlN, and InN, their alloys heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic electronic devices. Just over past few years, a number of “new” emerged with exciting photonic, electronic, magnetic properties. Some examples are 2D layered hBN III–V diamond analog cBN, transition metal nitrides ScN, YN, (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn...
ScxAl1−xN (x = 0.18–0.40) thin films of ∼28 nm thickness grown on metal polar GaN substrates by molecular beam epitaxy are found to exhibit smooth morphology with less than 0.5 roughness and predominantly single-phase wurtzite crystal structure throughout the composition range. Measurement piezoelectric d33 coefficient shows a 150% increase for lattice-matched Sc0.18Al0.82N relative pure aluminum nitride, whereas higher Sc contents lower coefficients. The electromechanical response epitaxial...
RF plasma assisted MBE growth of scandium nitride (ScN) thin films on Ga-polar GaN (0001)/SiC, Al-polar AlN (0001)/Al2O3, and Si-face 6H-SiC (0001) hexagonal substrates is found to lead a face centered cubic (rock salt) crystal structure with (111) out-of-plane orientation instead orientation. Cubic twinned patterns in ScN are observed by situ electron diffraction during epitaxy, the twin domains detected backscattered further corroborated X-ray diffraction. The epitaxial display very...
The goal of this study is to determine how bulk vibrational properties and interfacial structure affect thermal transport at interfaces in wide band gap semiconductor systems. Time-domain thermoreflectance measurements conductance G are reported for between nitride metals group IV (diamond, SiC, Si, Ge) III–V (AlN, GaN, cubic BN) materials. Group semiconductors have systematic differences properties. Similarly, HfN TiN also vibrationally distinct from each other. Therefore, comparing formed...
NbN films are grown on $c$-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the characterized to demonstrate that growth parameters such as substrate temperature active nitrogen flux affect phase films, thereby critical temperature. Four phases identified for in different conditions. We atomically flat highly crystalline $\ensuremath{\beta}\text{\ensuremath{-}}{\text{Nb}}_{2}\text{N}$ can be at temperatures...
Epitaxial integration of superconductors with semiconductors is expected to enable new device architectures and increase electronic circuit system functionality performance in diverse fields, including sensing quantum computing. Herein, radiofrequency plasma molecular‐beam epitaxy used epitaxially grow 3–200 nm‐thick metallic NbN x TaN thin films on hexagonal SiC substrates. Single‐phase cubic δ‐NbN are obtained when the starting substrate temperature ≈800 ≈900 °C, respectively, active N Nb...
An operational six-transistor SRAM cell is experimentally demonstrated using Double Gate CMOS FinFET technology. A size of 4.8 /spl mu/m/sup 2/ was achieved in 180 nm node technology, with stable operation at 1.5 V a single level copper interconnect. To our knowledge this represents the first experimental demonstration fully integrated Cell.
A summary of chip-to-package interaction (CPI) evaluations for a 90 nm PECVD low k technology will be discussed. This review cover that uses Cu dual damascene interconnections with SiCOH (K /spl sim/ 3.0) CVD BEOL insulator stack across multiple wirebond package types and flipchip C4 ceramic organic packages. It shown the use IBM's internally engineered insulator, CPI is not an issue this node.
We report the structural and electronic properties of NbN/GaN junctions grown by plasma-assisted molecular beam epitaxy. High crystal-quality NbN films on GaN exhibit superconducting critical temperatures in excess 10 K for thicknesses as low 3 nm. observe that lattice adopts stacking sequence underlying domain boundaries thereby occur at site atomic steps surface. The junction are characterized using Schottky barrier diodes. Current–voltage–temperature capacitance–voltage measurements used...
Integration and development of Cu Back-End Line (BEOL) with PECVD low-k organosilicate glass (OSG, also called SiCOH, carbon-doped oxide, CDO, etc.) for 130 nm 90 CMOS technologies has been reported by a number institutions. Here we report on Cu/SiCOH technology which similarities, but enhanced integration reliability characteristics while preserving the R C performance levels. These enhancements have led to excellent results here, are expected increase robustness high-volume manufacturing...
There is a growing interest in the exploration of nitride material family for radically scaled, high frequency, ultrasonic devices by epitaxial growth techniques. Furthermore, introduction techniques to conventional nitride‐based acoustic technology opens door exciting new families structures phonon confinement. As need higher frequency communications increases, both piezoelectrics and electrodes must scale smaller dimensions. It has recently become possible epitaxially grow...
The electronic structure of heterointerfaces is a pivotal factor for their device functionality. We use soft x-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved band structures on both sides Schottky heterointerface formed by epitaxial films superconducting NbN semiconducting GaN, and determine momentum-dependent interfacial offset as well band-bending profile. find, in particular, that Fermi states are separated energy momentum from excluding any...
We report a comprehensive characterization of 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading performance expected from low-k. Results are presented on every aspect BEOL chip-package yields, film parameters, capacitances circuit delays functional chips. All results meet or exceed our concurrent Cu/FTEOS technology, support extendibility 65 nm.
Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the first use of single-crystalline NbN thin films for superconducting nanowire (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature nearly lattice-matched AlN-on-sapphire substrates, exhibit a degree uniformity and homogeneity. Even with relatively thick films, fabricated show saturated internal efficiency near-IR wavelengths, demonstrating...
We demonstrate epitaxially integrated nanoscale superconductor tunnel diodes, realized using NbN on GaN thin films. Tuning the growth conditions leads to reduced interface defect density and emergence of superconducting coherence peaks in tunneling characteristics. The degree disorder is correlated with variance order parameter value different domains. Epitaxial integration layers allowed precise control quality at interface, and, by extension, value. numerical calculations taking a normal...