A5056251494- Particle Detector Development and Performance
- Silicon and Solar Cell Technologies
- Radiation Detection and Scintillator Technologies
- Advanced Semiconductor Detectors and Materials
- Radiation Effects in Electronics
- CCD and CMOS Imaging Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Particle physics theoretical and experimental studies
- Silicon Carbide Semiconductor Technologies
- Nuclear Physics and Applications
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Dark Matter and Cosmic Phenomena
- Superconducting and THz Device Technology
- Semiconductor Quantum Structures and Devices
- Nuclear physics research studies
- Radioactive Decay and Measurement Techniques
- Thin-Film Transistor Technologies
- Superconducting Materials and Applications
- Photocathodes and Microchannel Plates
- Ga2O3 and related materials
Ioffe Institute
2013-2023
First Pavlov State Medical University of St. Petersburg
2023
Physico-Technical Institute
2003-2015
Russian Academy of Sciences
2002-2012
Karlsruhe Institute of Technology
2009
Brookhaven National Laboratory
1996-2008
University of Florence
2005
University of Glasgow
2005
Helsinki Institute of Physics
2001
European Organization for Nuclear Research
2000
The distribution of the A-center (oxygen vacancy) in neutron-damaged silicon detectors was studied using deep level transient spectroscopy. A-centers were found to be nearly uniformly distributed wafer depth for medium-resistivity (0.1-0.2-k Omega -cm) and high-resistivity (>4-k high-temperature (1200 degrees C) oxidized detectors. A positive filling pulse needed detect detectors, this effect dependent on oxidation temperature. not observed a sample from with TCA having very high carbon...
Contextual processing is implicated in the pathophysiology of addictive disorders, but nature putative deficiencies remains unclear. We assessed some aspects contextual across multimodal experimental procedures with detoxified subjects who were dependent on opioids (n = 18), alcohol- 20), both and alcohol 22) healthy controls 24) using a) facial- b) emotionally laden images; c) gambling task d) sucrose solutions. Healthy displayed consistent response pattern throughout all categories...
Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of LHC beam loss monitoring system.The would be installed immediate proximity superconducting coils triplet magnets.We present here results situ irradiation test silicon using 23 GeV protons while keeping at temperature 1.9 K. Red laser (630 nm) Transient Current Technique DC current measurements were used to study pulse response collected charge irradiated maximum radiation...
The behavior of radiation-induced carbon-related defects in high-resistivity silicon detectors has been investigated. were introduced by α-particle irradiation and investigated deep-level transient spectroscopy. An unusual defect consists low-temperature annealing, including self-annealing at room temperature, the interstitial carbon Ci with a simultaneous increase Ci-Oi-complex concentration. kinetic parameters process have determined from Ci-center concentration versus time. Two annealing...
A new aspect of degradation phenomena neutron irradiated silicon detectors has been revealed which consists in the significant influence carbon related defect transformation on detector reverse current (I/sub rev/). The annealing at elevated temperatures and corresponding changes deep level transient spectroscopy (DLTS) spectra defects for fast detectors, fabricated high (4-6) k/spl Omega/-cm, moderate (0.5-1.0 Omega/-cm) low (<100 /spl resistivity material have investigated. For all studied...
High-resistivity p/sup +//n/n/sup +/ Si pad detectors (0.25 cm/sup 2/) were diced, using different dicing tools and methods, into a shape having on one edge no dead space ("edgeless detectors"). The was extended the sensitive area of front implant. Two used: laser cutting scribing. Dicing methods included from p+ side back n/sup side. It found that with chemical or aging treatment edges cut in this way, all (diced methods) suffered very high leakage current hundreds /spl mu/As to mA at full...