<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This letter presents the design, fabrication, and demonstration of a CMOS/microelectromechanical system (MEMS) electrostatically self-excited resonator based on submicrometer-scale cantilever with <formula formulatype="inline"> <tex>$\sim$</tex></formula>1 ag/Hz mass sensitivity. The mechanical is frequency-determining element an oscillator circuit monolithically integrated implemented in...

Integration of electrostatically driven and capacitively transduced MEMS resonators in commercial CMOS technologies is discussed. A figure merit to study the performance different structural layers defined. High frequency (HF) very high (VHF) resonance metal are fabricated on a deep submicron 0.18 µm technology characterized using electrical tests without amplification, demonstrating applicability fabrication process for future technologies. Moreover, devices show comparable terms Q × fres...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This letter presents the design, fabrication, and demonstration of a CMOS–MEMS filter based on two high- <formula formulatype="inline"><tex Notation="TeX">$Q$</tex></formula> submicrometer-scale clamped–clamped beam resonators with resonance frequency around 22 MHz. The MEMS are fabricated 0.35-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> CMOS process...

A bridge-shaped first-lateral-mode 60-MHz mechanical resonator, which is monolithically integrated with capacitive CMOS readout electronics, presented. The resonator fabricated directly on a commercial technology using the top metal level as structural layer. maskless single-step wet-etching process for structure release after standard integration only postfabrication requirement. Electrical characterization of electromechanical device demonstrates feasibility implementing...

This article presents a fully integrated ultrasound system based on single piezoelectric micromachined ultrasonic transducer (PMUT) monolithically fabricated with 0.13 μm complementary metal oxide semiconductor (CMOS) process analog front-end circuitry. The PMUT consists of an aluminum nitride, AlN, squared device 80 side that resonates at 2.4 MHz in liquid environment. monolithic integration the CMOS circuitry allows reduction parasitic capacitance, electronic noise contribution and clear...

This paper presents an analog front-end transceiver for ultrasound imaging system based on a high-voltage (HV) transmitter, low-noise amplifier (RX), and complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric micromachined ultrasonic transducer (CMOS-AlN-PMUT). The was designed using the 0.13-μm Silterra CMOS process MEMS-on-CMOS platform, which allowed implementation of AlN PMUT top CMOS-integrated circuit. HV transmitter drives column six 80-μm-square PMUTs excited with...

In this paper, we report on the main aspects of design, fabrication, and performance a microelectromechanical system constituted by mechanical submicrometer scale resonator (cantilever) readout circuitry used for monitoring its oscillation through detection capacitive current. The CMOS is monolithically integrated with technology that allows combination standard processes novel nanofabrication methods. constitutes an example submicroelectromechanical to be as cantilever-based mass sensor...

Monolithic mass sensors for ultrasensitive detection in air conditions have been fabricated using a conventional 0.35μm complementary metal-oxide-semiconductor (CMOS) process. The are based on electrostatically excited submicrometer scale cantilevers integrated with CMOS electronics. devices calibrated obtaining an experimental sensitivity of 6×10−11g∕cm2Hz equivalent to 0.9ag∕Hz locally deposited mass. Results from time-resolved measurements also presented. An evaluation the resolution...

This paper presents an 80 μm squared piezoelectric micromachined ultrasonic transducer (PMUT) using 9.5 % scandium-doped aluminum nitride (AlScN). The improvement in the effective coefficient (e <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31,f</sub> ) and consequently membrane displacement was demonstrating according with FEM simulation. proposed device has a high factor (k xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> <sup...

In this work, a single cell capable of monitoring fluid density, viscosity, sound velocity, and compressibility with compact small design is presented. The measurement system formed by two-port AlScN piezoelectric micromachined ultrasonic transducer (PMUT) an 80 μm length monolithically fabricated 130 nm complementary metal-oxide semiconductor (CMOS) process. electrode configuration allows the entire to be implemented in device, where one used as input other output. Experimental verification...

A mass sensor based on thin-film bulk acoustic resonator, intended for biomolecular applications, is presented. The thin film a (002) AlN membrane, sputtered over Ti∕Pt (001) Si wafer, and released by surface micromachining of silicon. Two experiments are proposed to test the sensing performance resonators: (a) distributed loading with MgF2 means physical vapor deposition (b) localized growing C∕Pt∕Ga composite using focused-ion-beam-assisted deposition, both top electrode. For cases,...

In this work, a waterproof tent-plate piezoelectric micromachined ultrasonic transducer (PMUT) with enhanced performance as actuator and sensor in comparison standard clamped PMUT is presented. The squared AlN has four linear holes that are sealed by the passive layer allowing to increase movement giving capability work liquid environment. dimension of was optimized displacement at least twice relation regular device. acoustic simulated COMSOL Multiphysics results were experimentally...

In this work we present an array of piezoelectric micromachined ultrasound transducer (PMUT’s) based on AlScN layer, monolithically integrated top a 130 nm CMOS circuit. The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${7}\times {7}$ </tex-math></inline-formula> along with the analog-front-end circuit has been configured to as linear phased array. Experiments carried out have demonstrated homogeneous...

This paper presents a fully integrated pitch-matched PMUTs-on-CMOS array with high potential in catheter-based ultrasound imaging systems and capabilities to obtain resolutions under 100 μm. The system-on-chip consists of 7x7 AlScN PMUTs connected 1-D configuration where the six external rows are used generate acoustic pressure through three HV-pulser CMOS circuits, central row is sense incoming wave which will be amplified by LNA amplifier. experimental verification liquid environment gave,...

A nanoelectromechanical mass sensor is used to characterize material deposition rates in stencil lithography. The flux through nanometer-sized apertures mapped with high spatial (below 1 µm) and deposition-rate 10 pm s−1) resolutions by displacing the above sensor. It concluded that as small 100 nm can be characterized. Detailed facts of importance specialist readers are published ”Supporting Information”. Such documents peer-reviewed, but not copy-edited or typeset. They made available...

This letter reports on the design and characterization of a dual-frequency oscillator that consist reliable seesaw-shaped tungsten resonator integrated in back end line standard 0.35-μm complementary metal-oxide-semiconductor (CMOS) technology high-gain, low power (<; 10 μW) ultra-compact transimpedance amplifier (TIA) core. The 550-/900-kHz prototyped CMOS-MEMS can be operated with reduced TIA supply voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

The design and test of a fully integrated CMOS-MEMS-MIXLER, using commercial technology (AMS 0.35 µm) is presented. MEMS structure basically clamped-clamped beam resonator implemented with the polysilicon capacitance module selected technology, showing fundamental lateral resonance frequency 22.5 MHz. Two different approaches based, respectively, on nonlinearity voltage against excitation force amplitude modulation signal, have been proposed in order to operate as MIXLER.

Water vapor sensing characterization of a metal resonator fabricated with an industrial 0.35 μm CMOS technology is reported. The frequency ∼13.2 MHz and exhibits sensitivity magnitude ∼3.5 kHz per %RH without requiring any additional hygroscopic coating layer. An on-chip integrated oscillator circuit enables unprecedented resolution 0.005 %RH.

In this paper, guidelines for the optimization of piezoelectrical micromachined ultrasound transducers (PMUTs) monolithically integrated over a CMOS technology are developed. Higher acoustic pressure is produced by PMUTs with thin layer AlN material and Si3N4 as passive layer, studied here finite element modeling (FEM) simulations experimental characterization. Due to layers used, parameters such residual stress become relevant they produce buckled structure. It has been reported that...