Integration of electrostatically driven and capacitively transduced MEMS resonators in commercial CMOS technologies is discussed. A figure merit to study the performance different structural layers defined. High frequency (HF) very high (VHF) resonance metal are fabricated on a deep submicron 0.18 µm technology characterized using electrical tests without amplification, demonstrating applicability fabrication process for future technologies. Moreover, devices show comparable terms Q × fres...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This letter presents the design, fabrication, and demonstration of a CMOS–MEMS filter based on two high- <formula formulatype="inline"><tex Notation="TeX">$Q$</tex></formula> submicrometer-scale clamped–clamped beam resonators with resonance frequency around 22 MHz. The MEMS are fabricated 0.35-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> CMOS process...

We report on a new design approach for X-Y symmetric resonator, emphasizing the increase in symmetry by localization of device anchors. The resonator is mechanized as z-axis rate gyroscope (RG), and concept compatible with rate-integrating mechanization. Our based strategically placing critical mechanical elements at center structure, to mitigate effect fabrication imperfections across device. experimentally demonstrated that yields sub-Hz frequency separation between operational modes,...

This work reports a monolithic RF front-end module integrating bulk acoustic wave (BAW) filters, Lamb and electronic silicon-on-insulator (RFSOI) switches to deliver single-chip multiband (RF-FEM) manufactured on commercial 200mm foundry technology. BAW filters built in the same chip within process enable operation. Vertical System-on-Chip (SoC) integration of MEMS RFSOI components contributes footprint reduction up 50%, compared system-in-package (SiP) modules, reduces design complexity...

A novel technique for global packaging of MEMS devices using standard CMOS technology is presented. polysilicon resonator fabricated and on-chip packaged two metal layers already available from the technology. simple buffered HF wet etching process performed in house to release while deposition used vacuum seal zero-level package. Both post-processing steps are carried out on chips. The design carefully done order avoid degradation MEMS. electrical frequency response testing performance...

In this paper, a novel fully integrated CMOS-MEMS filter implemented on commercial CMOS technology is presented. The combination of mechanical and electrical coupling used to enhance the response band pass filter. particular, 20 dB shape factor as low 2 35 stopband rejection are achieved. Moreover, topology device allows obtaining dual-bandpass behavior, presenting tunable bandwidth deep notch between bands. Results show dual-band with 22 inner rejection, center frequencies at 27.5 27.8 MHz,...

The design and test of a frequency channel selection MEMS filter implemented on commercial CMOS technology is presented. Mechanical coupling between two clamped-clamped beams used to obtain 0.5% bandwidth in tunable 26 MHz bandpass with very low distortion (less than 0.1 dB), which makes the suitable for wireless super-hetherodyne transceivers communications standards such as GSM.

We developed a gyroscope with less than 1-deg/h bias instability variation in temperature range from -40 °C to 125 while performing around 4-deg/h instability. This stability was achieved by using the stable frequency separation between drive and sense modes of Coriolis vibratory gyroscope. To achieve this stability, mechanical part designed one-sided open frame mitigate resonant frequencies caused thermal stress. At circuit level, we implemented self-clocking architecture bandpass Σ - Δ...

This paper shows the results of fabrication and characterization a CMOS oscillator with an integrated electrostatically self-excited low voltage MEMS resonator monolithically fabricated in commercial technology (AMS 0.35μm). Oscillation is achieved at DC bias 3.8V air conditions. Measurements vacuum conditions achieve performance even 0V dc polarization. In this case effective applied 2V due to polarization input amplifier. These biasing voltages are for author's knowledge smallest based oscillators

This paper presents a single Double-Ended Tuning Fork (DETF) MEMS resonator-based band-pass filter fabricated on commercial standard CMOS technology. The accurate design of this resonator demonstrates the ability to perform filtering without need coupling multiple resonators. main characteristic is define out-of-phase mode resonance frequency DETF smaller than in-phase frequency. electrical characterization shows that stand-alone 44.4MHz central with 0.6% bandwidth in air.

We propose a new approach for integration of electrodes as part the micro glass-blown spherical resonator fabrication process well an ALD metallization inner side shell enabling electrostatic conduction. use 500μm thick silicon electrode whose gap width, defined during glass blowing process, is not limited by lithographic effect and enables sub-micron possibilities. In addition, we introduce technique based on tungsten shell. 35:1 aspect ratio demonstrated to excite radius with operating...

We designed, fabricated, and experimentally demonstrated a dynamically balanced z-axis MEMS vibratory gyroscope utilizing the concentrated suspension architecture. This architecture allows for high degree of structural symmetry (degeneracy modes), potentially enabling precision Rate Gyroscopes (RG) Integrating (RIG). The full dynamic balance design is enabled by two concentric masses that oscillate in anti-phase as an unconstrained tuning fork, any direction in-plane substrate. Experiments...

ABSTRACT⎯The design of a CMOS clamped-clamped beam resonator along with full custom integrated differential amplifier, monolithically fabricated commercial 0.35 μm technology, is presented.The implemented which minimizes the negative effect parasitic capacitance, enhances electrical MEMS characterization, obtaining 48×10 8 resonant frequency-quality factor product (Q×f res ) in air conditions, quite competitive comparison existing CMOS-MEMS resonators. Keywords⎯CMOS-MEMS,MEMS resonator,...

Clamped-clamped beam resonators are designed and fabricated in a 0.35 mum CMOS commercial technology, using simple one-step mask-less wet etching to release the MEMS structures. The resonator, with 22 MHz resonance frequency shows Q value of 227 4400, when measured at atmospheric pressure vacuum, respectively. This resonator is used as main building block for filtering application. Using parallel differential on-chip amplification, RF-CMOS-MEMS system forms tunable band-pass filter...

In this paper a fully integrated CMOS-MEMS filter is presented. The formed by two beams using V-shaped coupler which allows the in-plane vibrations. device presents BW of 1.85MHz for 29MHz center frequency. electrical phase inversion mechanism used in order to obtain response. fabricated capacitance module present commercial CMOS technology from Austria Micro-systems 0.35 µm.

This work is the first demonstration of a monolithic multiband RF front-end module (RF-FEM), integrating MEMS Lamb-wave filters and switches on 200mm silicon-on-insulator (RFSOI) foundry technology. Multiple with photolithography-defined frequencies coexist components in same wafer. technology enables vertical integration RF-FEM for more compact System-on-Chip (SoC) architectures. The resulting RF-FEMs will then integrate process multi-frequency filter banks, low noise amplifiers (LNAs),...

We report a technique for defining high aspect ratio electrostatic gaps in micromachined glassblown spherical resonators. The approach is based on intentionally allowing physical contact between the resonator and electrode structure, hence "collapsed electrodes", then releasing metalizing electrodes resonator. utilized 500 um SOI glassblowing fabrication process, to define narrow (2 um) thick (400 actuators (200:1 ratio). demonstrated integrated with electrodes, blurring boundary complexity...

Presented is a fully integrated solution on CMOS technology for achieving longitudinal bulk acoustic wave microelectromechanical resonator. The capacitive polysilicon module present in the AMS 0.35 µm commercial used to implement bar with gap of 40 nm using interpoly oxide as spacer. Measurements, air, show resonance frequency 258 MHz.

This paper demonstrates that the Thermal Coefficient of resonant Frequency (TCF) a micro glass-blown Pyrex spherical resonator can be substantially reduced by application titanium (Ti) coating. Finite Elements Analysis (FEA) is used to demonstrate temperature dependence Young's modulus shell material dominant parameter affecting TCF resonator, clearly suggesting use metallic compensating layer. Experimental characterization 70% (from 73 ppm/°C 24 ppm/°C) 1.33 μm thick layer Ti. It predicted...