A5002312407- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- Neural dynamics and brain function
- Photoreceptor and optogenetics research
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Neural Networks and Reservoir Computing
- CCD and CMOS Imaging Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Copper-based nanomaterials and applications
- Copper Interconnects and Reliability
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor Quantum Structures and Devices
- Tissue Engineering and Regenerative Medicine
- Gas Sensing Nanomaterials and Sensors
- Conducting polymers and applications
- MXene and MAX Phase Materials
- Nanomaterials and Printing Technologies
Dongguk University
2021-2024
Indian Institute of Technology Madras
2024
Seoul Institute
2021
Chungbuk National University
2019-2021
Soochow University
2018-2020
Seoul National University
2019
Yonsei University
2014-2017
Government of the Republic of Korea
2014-2015
Sungkyunkwan University
2012-2013
Memristors, owing to their uncomplicated structure and resemblance biological synapses, are predicted see increased usage in the domain of artificial intelligence. Additionally, augment capacity for multilayer data storage high-density memory applications, meticulous regulation quantized conduction with an extremely low transition energy is required. In this work, a-HfSiOx-based memristor was grown through atomic layer deposition (ALD) investigated its electrical properties use multilevel...
Abstract A hard breakdown phenomenon occurs in the TiN/WO X /Pt device owing to metallic nature of WO layer deposited by pulsed direct current (DC) sputtering. In particular, analog resistive switching (RS) is achieved as defect states naturally occurring TiON (oxygen vacancies region) between TiN and TiO 2 fluctuate based on polarity bias. Interestingly, TiN/TiO /WO displays gradual, bipolar, SET RESET operations during DC voltage sweep cycling without requiring an electroforming process....
The evolution of copper-based interconnects requires the realization an ultrathin diffusion barrier layer between Cu interconnect and insulating layers. present work reports use atomically thin graphene as a to metallization. performance is investigated by varying grain size thickness layer; single-layer average 2 ± 1 μm (denoted small-grain SLG), 10 large-grain multi-layer (MLG) 5-10 nm. thermal stability these barriers after annealing Cu/small-grain SLG/Si, Cu/large-grain Cu/MLG/Si stacks...
Global plastic waste is increasing rapidly. In general, densely populated regions generate tons of daily, which sometimes disposed on land or diverged to sea. Most the plastics created in form have complex degradation behavior and are non-biodegradable by nature. These remain intact environment for a long time span potentially originate complications within terrestrial marine life ecosystems. The strategic management recycling can preserve environmental species associated costs. key...
Memristor device opens a new pathway for artificial synapses in the neuromorphic system. In this work, we demonstrate enhanced memristive and synaptic charactersitcs SnO2-based memristor with thin amorphous zinc tin oxide (α-ZTO) film TiON interlayer that is confirmed by X-ray photoelectron spectroscopy (XPS) analysis. A more linear symmetric long-term potentiation (LTP) depression (LTD) lower power consumption are achieved through resistance change induced repetitive pulse inputs double...
In this study, we fabricate and characterize a Ti/TiO2/Si device with different dopant concentrations on silicon surface for neuromorphic systems. We verify the stack using transmission electron microscopy (TEM). The Ti/TiO2/p++Si exhibits interface-type bipolar resistive switching long-term memory. potentiation depression by pulses of various amplitudes are demonstrated gradual switching. Moreover, pattern-recognition accuracy (>85%) is obtained in system simulation when conductance used as...
Due to their high data-storage capability, oxide-based memristors with controllable conductance properties have attracted great interest in electronic devices for integration density and neuromorphic synapses. However, switching uniformity of during the conversion from a low (ON-state) resistance state (OFF-state) become essential implementation neural networks. In this study, we fabricate Pt/HfO2/HfAlOx/TiN memristor incorporating atomic-layer-deposited HfO2/HfAlOx high-k dielectric thin...
Abstract This study implements a highly uniform 3D vertically stack resistive random‐access memory (VRRAM) with four‐layer contact hole structure. The fabrication process of VRRAM is demonstrated, and its physical electrical properties are thoroughly examined. X‐ray photoelectron spectroscopy transmission electron microscopy employed to analyze the chemical distribution structure device. Multilevel capability, reliable endurance (>10 4 cycles), retention (10 s) successfully obtained....
Abstract In this study, the resistive switching phenomenon and synaptic mimicry characteristics of an indium tin oxide (ITO)/indium zinc (IZO)/Al 2 O 3 /TaN device are characterized. The insertion a thin Al layer via atomic deposition improves such as cycle‐to‐cycle device‐to‐device uniformity reduces power consumption proposed with respect to single‐layer ITO/IZO/TaN device. exhibits coexistence volatile nonvolatile under optical electrical measurement conditions. Nonvolatile memory stable...
A switchable water-adhesive, superhydrophobic nanowire surface is developed for the formation of functional stem cell spheroids. The sizes hADSC spheroids are readily controllable on surface. Our increases cell-cell and cell-matrix interaction, which improves viability paracrine secretion Accordingly, produced exhibit significantly enhanced angiogenic efficacy.
Atomic layer deposited (ALD) HfO
In this study, the resistive switching and synaptic properties of a complementary metal-oxide semiconductor-compatible Ti/a-BN/Si device are investigated for neuromorphic systems. A gradual change in resistance is observed positive SET operation which Ti diffusion involved conducting path. This extremely suitable devices hardware-based The isosurface charge density plots experimental results confirm that boron vacancies can help generate path, whereas path generated by cation from...
Neuromorphic computing offers parallel data processing and low energy consumption can be useful to replace conventional von Neumann computing. Memristors are two-terminal devices with varying conductance that used as synaptic arrays in hardware-based neuromorphic devices. In this research, we extensively investigate the analog symmetric multi-level switching characteristics of zinc tin oxide (ZTO)-based memristor for systems. A ZTO semiconductor layer is introduced between a complementary...