A5100722211- 2D Materials and Applications
- Graphene research and applications
- Advanced ceramic materials synthesis
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Carbon Nanotubes in Composites
- Nanowire Synthesis and Applications
- Magnetic properties of thin films
- Aluminum Alloys Composites Properties
- CCD and CMOS Imaging Sensors
- Semiconductor materials and devices
- Molecular Junctions and Nanostructures
- Nuclear materials and radiation effects
- Advanced Sensor and Energy Harvesting Materials
- Brain Tumor Detection and Classification
- Fatigue and fracture mechanics
- Medical Imaging and Analysis
- Magnetic and transport properties of perovskites and related materials
- High-Temperature Coating Behaviors
- Infrared Target Detection Methodologies
- Physics of Superconductivity and Magnetism
- Heavy metals in environment
- Organic Electronics and Photovoltaics
- Aluminum toxicity and tolerance in plants and animals
King Abdullah University of Science and Technology
2023-2025
Chongqing Normal University
2024
Sichuan Agricultural University
2024
Chengdu University
2023-2024
Central South University
2021-2023
First Affiliated Hospital of Chengdu Medical College
2022-2023
China Academy of Engineering Physics
2023
Zhejiang University of Technology
2022-2023
Chinese Academy of Sciences
2005-2022
University of Science and Technology of China
2016-2022
Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth nonlayered molybdenum nitride passivate its surface, which enabled centimeter-scale films MoSi2N4 This was built up by septuple atomic layers N-Si-N-Mo-N-Si-N, can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. material exhibited semiconducting behavior (bandgap...
Abstract The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate flexibility, sophistication, and adaptability animal systems, but also do so with computational efficiency elegance. Similar biological these circuits integrate functions image sensing, memory processing into device, process continuous analog brightness signal in real-time. High-integration, flexibility ultra-sensitivity are essential for practical artificial that...
Single-wall carbon nanotubes (SWCNTs) are ideal for fabricating transparent conductive films because of their small diameter, good optical and electrical properties, excellent flexibility. However, a high intertube Schottky junction resistance, together with the existence aggregated bundles SWCNTs, leads to degraded optoelectronic performance films. We report network isolated SWCNTs prepared by an injection floating catalyst chemical vapor deposition method, in which crossed welded graphitic...
Abstract Since its invention in the 1960s, one of most significant evolutions metal-oxide-semiconductor field effect transistors (MOS-FETs) would be three dimensionalized version that makes semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During past decades, width fin ( W $${}_{{\rm{fin}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow/><mml:mrow><mml:mi>fin</mml:mi></mml:mrow></mml:msub></mml:math> ) FinFETs...
Abstract The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication high-performance electronic devices. However, grown from traditional metal catalysts usually have diversified structures and properties. Here we design prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst uniform size structure by thermal reduction [Co(CN) 6 ] 3− precursor adsorbed on self-assembled block copolymer...
Abstract Anisotropy in crystals arises from different lattice periodicity along crystallographic directions, and is usually more pronounced two dimensional (2D) materials. Indeed, the emerging 2D materials, electrical anisotropy has been one of recent research focuses. However, key understandings in-plane anisotropic resistance low-symmetry as well demonstrations model devices taking advantage it, have proven difficult. Here, we show that, few-layered semiconducting GaTe, conductivity...
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, CuInP2S6-based devices suffer from poor thermal stability (<42 °C). Here, exploiting electric field-driven phase transition in rarely studied antiferroelectric CuCrP2S6 crystals, we develop a memristor showing sizable resistive-switching ratio ~ 1000, high switching endurance up to 20,000 cycles,...
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full acceptance as compliant integration in logic devices. Two key-components master are the barriers at metal/semiconductor interfaces and mobility of channel, which endow building-blocks ${pn}$ diode field effect transistor. Here, we devised a reverted stacking...
Growth of large-area, uniform, and high-quality monolayer transition-metal dichalcogenides (TMDs) for practical industrial applications remains a long-standing challenge. The present study demonstrates modified predeposited chemical vapor deposition (CVD) process by employing an annealing procedure before sulfurization, which helps in achieving highly TMDs on various substrates. resulted molten liquid state the precursors CVD process, not only facilitated uniform redistribution precursor...
Abstract Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical that depend on the number layers, ability to form hybrid structures. However, intrinsic 2D material-based photodetectors is low due atomic thickness. Photogating widely used improve responsivity devices, which usually generates large noise current, resulting in limited detectivity. Here, we report...
Abstract Large-area high-quality AB-stacked bilayer graphene films are highly desired for the applications in electronics, photonics and spintronics. However, existing growth methods can only produce discontinuous with variable stacking orders because of non-uniform surface strong potential field solid substrates used. Here we report wafer-scale continuous uniform on a liquid Pt 3 Si/solid substrate by chemical vapor deposition. The show quality, mechanical electrical properties comparable...
Abstract Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by atomic thickness graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction has theoretically where graphene is sandwiched silicon layers. Here we demonstrate vertical silicon-graphene-germanium...
The objective of this study was to explore the diagnostic and prognostic value interleukin-6 (IL-6) in sepsis patients presenting emergency department.A total 128 who visited department West Hospital Beijing Chaoyang Hospital, affiliated Capital Medical University, from November 2021 February 2022 were subjected study. According Sepsis-3.0 criteria for sepsis, divided into non-sepsis group (65 cases) (63 cases). Demographic data clinical characteristics two patient groups compared. Serum...
Realizing field-free switching of perpendicular magnetization by spin–orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication affect device stability scalability. Here, we propose a novel approach using z-polarized spin currents deterministic through interfacial engineering. We fabricate La0.67Sr0.33MnO3–SrIrO3 (LSIMO) thin films with robust coupling...
Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual cells effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) by assembling the emerging two-dimensional ferroelectric CuCrP2S6 with MoS2 h-BN. The memory cell exhibits high resistance tunability (106), low (120 fA),...
Clean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer the clean graphene on Cu, it has not been usable 2D noble metals or large-area transfer. Here, we report poly(methyl methacrylate) (PMMA)/rosin double that enables facile ultraclean different metals. The bottom ensures transfer, whereas top PMMA only screens from conditions but also improves...
Significance Although graphene shows great promise as a generational flexible transparent electrode (FTE), its development has been severely limited by the intrinsic trade-off between electrical conductance and transparency with performance metrics inferior to that of state-of-the-art ITO electrodes. We report straightforward approach break previous limit in FTEs yield an unprecedented rivals best commercial electrode. Using tailored monolayer FTE, we further demonstrate high-performance...
Carbon nanotube (CNT) thin-film transistors are expected to be promising for use in flexible electronics including and transparent integrated circuits wearable chemical physical sensors driving the of display panels. However, current devices based on CNT channels suffer from poor performance uniformity low manufacturing yield; therefore, they still far being practical. This is usually caused by nonuniform deposition semiconducting CNTs rough surface substrates. Here, we report (TFTs) a 64 ×...