A5101559594- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Graphene research and applications
- MXene and MAX Phase Materials
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Nanowire Synthesis and Applications
- Industrial Technology and Control Systems
- Neuroscience and Neural Engineering
- Electronic and Structural Properties of Oxides
- Gas Sensing Nanomaterials and Sensors
- Wastewater Treatment and Nitrogen Removal
- Force Microscopy Techniques and Applications
- ZnO doping and properties
- Conducting polymers and applications
- Photoreceptor and optogenetics research
- Nanomaterials and Printing Technologies
- Advancements in Battery Materials
- Corrosion Behavior and Inhibition
- Thermal properties of materials
- Fluid Dynamics and Heat Transfer
- Photonic and Optical Devices
- Smart Grid and Power Systems
- Advanced Fiber Laser Technologies
China Electronics Technology Group Corporation
2024
Qingdao University
2024
Soochow University
2016-2023
Southeast University
2018-2023
Tongji University
2007-2022
Yangtze University
2021
Shanxi Datong University
2021
The University of Texas at Austin
2017-2019
Institute of Microelectronics
2019
Chinese Academy of Sciences
2017-2019
Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for fabrication electronic devices, with nonvolatile memories being those that have received most attention. The presence and quality RS phenomenon in system can be studied using different prototype cells, performing experiments, displaying figures merit, developing computational analyses. Therefore, real usefulness impact findings...
Ultrathin Cu-MOF@δ-MnO<sub>2</sub> nanosheets have been successfully prepared and the operating voltage window of asymmetric supercapacitor can reach high values in aqueous electrolyte without any water electrolysis.
Abstract In the race of fabricating solid‐state nano/microelectronic devices using 2D layered materials (LMs), achieving high yield and low device‐to‐device variability are two main challenges. Electronic that drive currents in‐plane homogeneously along 2D‐LMs (i.e., transistors, memtransistors) strongly affected by local defects grain boundaries, wrinkles, thickness fluctuations, polymer residues), as they create inhomogeneities increase variability, resulting in a poor performance at...
Abstract The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled enhancement their performance during the last four decades, allowing fabrication more powerful electronic products (e.g., computers and phones). However, as size FETs currently approaches interatomic distances, a general stagnation is expected, new strategies to continue trend are being thoroughly investigated. Among them, use 2D semiconducting materials channels in raised lot...
The synthesis of two three-dimensional coordination frameworks [CdX2(TPA)] (X = Br for 1 and I 2) has been achieved through the assembly tri(pyridine-3-yl)amine (TPA) with cadmium halides. compounds are isostructural, both fabricated from infinite linkage Cd2+ TPA molecules, halide anions serving as μ2-bridging terminally coordinated species. Photoluminescence properties polymers have thoroughly examined, revealing room-temperature phosphorescence unique decay lifetimes. Remarkably, a yellow...
Transistors with exfoliated two-dimensional (2D) materials on a SiO2/Si substrate have been applied and proven effective in wide range of applications, such as circuits, memory, photodetectors, gas sensors, optical modulators, valleytronics, spintronics. However, these devices usually suffer from limited gate control because the thick SiO2 dielectric lack reliable transfer method. We introduce new back-gate transistor scheme fabricated novel Al2O3/ITO (indium tin oxide)/SiO2/Si "stack"...
In order to fulfill the information storage needs of modern societies, performance electronic nonvolatile memories (NVMs) should be continuously improved. past few years, resistive random access (RRAM) have raised as one most promising technologies for future due their excellent and easy fabrication. this work, a novel strategy is presented further extend RRAMs. By using only cheap industry friendly materials (Ti, TiO 2 , SiO X n ++ Si), memory cells are developed that show both filamentary...
The application of 2D materials-based flexible electronics in wearable scenarios is limited due to performance degradation under strain fields. In contrast its negative role existing transistors or sensors, herein, we discover a positive effect the ammonia detection PtSe2. Linear modulation sensitivity achieved PtSe2 sensors via customized probe station with an situ loading apparatus. For trace absorption, 300% enhancement room-temperature (31.67% ppm-1) and ultralow limit (50 ppb) are...
Two-dimensional (2D) semiconductors have become promising candidates for nanoelectronics applications due to their unique layered structure and rich physical properties. However, the significant lack of reproducible p-type doping methods that can avoid instability induced by widely used charge transfer method greatly limits these in complementary metal-oxide-semiconductor (CMOS) integrated digital circuits. This work presents a new scheme realize stable WS2 with excellent layer...
Despite the enormous interest raised by graphene and related materials, recent global concern about their real usefulness in industry has raised, as there is a preoccupying lack of 2D materials based electronic devices market. Moreover, analytical tools capable describing predicting behavior (which are necessary before facing mass production) very scarce. In this work we synthesize resistive random access memory (RRAM) using graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) van der Waals...
Insulating films are essential in multiple electronic devices because they can provide functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, optical properties, be effectively used to additional performances, flexibility transparency. 2D insulators called future devices, but their reliability, degradation kinetics, dielectric breakdown (BD) process still not understood. In this work, the...
Hexagonal boron nitride (h-BN) is an attractive insulating material for nanoelectronic devices due to its high reliability as dielectric and excellent compatibility with other two dimensional (2D) materials (e.g. graphene, MoS2). Multilayer h-BN stacks have been readily grown on Cu Pt substrates via chemical vapor deposition (CVD) approach, confirming potential wafer scale integration. However, the growth of needs be also achieved in order expand use this material. Recently, CVD monolayer Fe...
The lack of stable and efficient techniques to synthesize high‐quality large‐area thin films is one the major bottlenecks for real‐world application 2D transition metal dichalcogenides. In this work, growth molybdenum disulfide (MoS 2 ) on sapphire substrates by sulfurizing MoO 3 film deposited atomic layer deposition (ALD) reported. advantages ALD method can be well inherited, synthesized MoS exhibit excellent controllability, wafer‐scale uniformity, homogeneity. with desired thickness...
Inkjet-printed h-BN memristors exhibit multiple stochastic phenomena that are very attractive for use as entropy sources in electronic circuits data encryption. The high variability can be exploited to create unique and unpredictable patterns.
Abstract The introduction of 2D materials in the structure memristors has been shown to provide devices with enhanced flexibility and transparency. However, their use is still not well justified, as electrical performance materials‐based behind that transition metal oxide (TMO)‐based memristors. This work presents fabrication metal/ h ‐BN/metal ultra‐low power consumption beat previous record set by Au/HfO x :Ag/Au Moreover, all methods used synthesize fabricate are scalable (e.g., chemical...
Wafer-level integration of 2D transition metal disulfide is the key factor for future large-scale continuously scaling-down devices, and has attracted great attention in recent years. Compared with other ultra-thin film growth methods, atomic layer deposition (ALD) advantages excellent step coverage, uniformity thickness controllability. In this work, we synthesized thickness-controllable MoS2 films on sapphire substrate by ALD at 150 °C molybdenum hexcarbonyl hexamethyldisilathiane (HMDST)...
Memristors have shown an extraordinary potential to emulate the plastic and dynamic electrical behaviors of biological synapses been already used construct neuromorphic systems with in-memory computing unsupervised learning capabilities; moreover, small size simple fabrication process memristors make them ideal candidates for ultradense configurations. So far, properties memristive electronic (i.e., potentiation/depression, relaxation, linearity) extensively analyzed by several groups....
Porous CuO particles with oxygen vacancies are first synthetized by a simple calcination of Cu2C2O4 particles. Oxygen confirmed high resolution transmission electron microscopy, paramagnetic resonance measurements, and X-ray photoelectron spectroscopy. When porous as-assembled as nonenzymatic glucose sensors, they reveal sensitivity good anti-interference ability. The existing can help to increase the rate that reaches surface accelerate kinetics redox reactions enhance electrochemical...
The synthesis of piezoelectric two-dimensional (2D) materials is very attractive for implementing advanced energy harvesters and transducers, as these provide enormously large areas the exploitation effect. Among all 2D materials, molybdenum disulfide (MoS2) has shown largest activity. However, research papers in this field studied just a single material, may raise concerns because different setups could values depending on experimental parameters (e.g., probes used analyzed). By using...
Due to their outstanding electronic and physical properties, two-dimensional (2D) materials have attracted much interest for the fabrication of solid-state microelectronic devices. Among all methods synthesize 2D materials, chemical vapor deposition (CVD) is most attractive in field microelectronics because it can produce high quality material a scalable manner. However, temperatures (>900 °C) required during CVD growth impede direct synthesis on metal-coated wafers due prohibitive metal...